Low-temperature reaction of magnesium with fluorobenzene

The low-temperature reaction of magnesium with fluorobenzene has been investigated. Joint condensation of magnesium and fluorobenzene vapours at low temperatures quantitatively gave phenylmagnesium fluoride in one stage.     

Deuterium NMR studies of inositol liquid crystals [1]

Deuterium NMR investigations are presented on members of two new mesogenic series derived from the naturally occurring stereoisomers myo- and scW/o-inositol. Tetraethers of these two series exhibit thermotropic columnar phases in which the columns are apparently formed by stacked hydrogen bonded dimers of these molecules which chemically are vicinal diols. Deuterium NMR measurements were performed on the tetraoctyl homologues 2e (a cis diol) and 3e (a trans diol) of these series. We have investigated mixtures of these diols with small amounts of benzene-d₆ as probe molecules as well as samples of the neat diol compounds deuteriated at their hydroxyl groups. The results obtained show that the mesophases of both compounds are uniaxial and align partially in a magnetic field upon slow cooling from their isotropic liquids. The alignment is with the director parallel to the field direction indicating that the anisotropic magnetic susceptibility of this mesophase is positive. The deuterium quadrupole splitting of the benzene-d₆ probe in both systems is temperature dependent and in the trans diol 3e it even changes sign. This is interpreted in terms of a model in which the benzene-d₆ probe equilibrates rapidly between two (or more) solvation sites with quadrupole splittings of opposite signs The deuterium spectra of the neat deuterium labelled cis diol 2e exhibit two different signals due to the two deuterons which are located at the axial and equatorial hydroxyl groups. This indicates that there is no fast intra- or intermolecular exchange of the hydroxyl hydrogens. The overall quadrupole splittings of the hydroxyl deuterons in this compound are highly reduced compared to their static values and this is interpreted in terms of motional modes involving both reorientation of the hydroxyl deuterons about their C-O axis and overall reorientation of the molecules (or pairs of molecules) around the columnar axes. The corresponding spectra of the neat deuteriated trans diol 3e exhibit a single spectrum indicating that both hydroxyl deuterons in this compound are equivalent, or very nearly so. Within the mesophase region the spectrum undergoes gradual changes due to the increase in the molecular mobility, but the overall motional narrowing is less than in the cis isomer 2e. Apparently due to stronger hydrogen bonding in the trans isomer 3e the precession of the hydroxyl groups is hindered and a fast molecular reorientation is only possible at high temperatures.     

Dynamics of a pair of coupled nonlinear oscillators

A pair of coupled classical oscillators with a general potential and general form of coupling is investigated. For general potentials, the single-frequency solution is shown to be stable for small excitations. For special potentials, such system remains stable for an arbitrary excitation. In both cases, the stability does not depend on the form of coupling. Transition to the instability regime follows from the way how nonlinear potential entrains the energy transfer between the oscillators. Relation between the existence of multi-frequency quasi-periodic or periodic solutions and the instability of single-frequency ones is discussed.     

Filling of dislocation levels in strong electric fields

The dependence of the filling factor for occupation of the energy levels of an edge dislocation by electrons on the external electric field is investigated theoretically. An analytical relation is derived for the filling factor. It is established that the dislocation filling factor decreases as the electric field is increased. Fiz. Tekh. Poluprovodn. 32, 36–37 (January 1998)     

Optimal Design of the High-Power Plate and Grid Modulated HF Amplifier by High Modulation Levels

The optimal design of the high power plate and grid modulated selective amplifier is examined in this paper. For the analysis purposes, the linear model of constant plate current characteristics for HF power triode is applied. The carrier wave state of the unmodulated amplifier is chosen so to enable the realization of the high levels of modulation. The results are obtained immediateZy, and the estimated error is acceptable. The estimated characteristic values of this high power and high efficiency HF amplifier are shown in the corresponding diagrams.     

Analogy of thermogravimetric measurements

Dimensionless number has been developed and introduced for quantitative analysis of the effect of thermogravimetric measuring factors like sample quantity, heating rate, etc. The TG, DTG and T data of different thermogravimetric measurements can be used directly for calculation of the three constants of analogy. TG data of CaCO₃ measured in very different conditions show the method of transformation and its applicability for calculation of the correlation of measurements.     

Suppression of boron penetration in p+ polysilicon gateP-MOSFETs using low-temperature gate-oxide N2O anneal

It has been reported that high-temperature (~1100°C) N₂ O-annealed oxide can block boron penetration from poly-Si gates to the silicon substrate. However, this high-temperature step may be inappropriate for the low thermal budgets required of deep-submicron ULSI MOSFETs. Low-temperature (900~950°C) N₂O-annealed gate oxide is also a good barrier to boron penetration. For the first time, the change in channel doping profile due to compensation of arsenic and boron ionized impurities was resolved using MOS C-V measurement techniques. It was found that the higher the nitrogen concentration incorporated at Si/SiO₂ interface, the more effective is the suppression of boron penetration. The experimental results also suggest that, for 60~110 Å gate oxides, a certain amount of nitrogen (~2.2%) incorporated near the Si/SiO₂ interface is essential to effectively prevent boron diffusing into the underlying silicon substrate     

Enhancement of oxide break-up by implantation of fluorine inpoly-Si emitter contacted p+-n shallow junctionformation

In this study, it is demonstrated that the incorporation of fluorine can enhance poly-Si/Si interfacial oxide break-up in the poly-Si emitter contacted p⁺-n shallow junction formation. The annealing temperature for breaking up the poly-Si/Si interfacial oxide has been found to be as low as 900°C. As a result, the junction depth of the BF₂-implanted device is much larger than that of the boron-implanted device