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991.
The super chamber, a separated UHV reaction-chamber system has been developed. A conversion efficiency of 11.7% was obtained for an a-Si solar cell using a high-quality i-layer deposited by the super chamber, and a p-layer fabricated by a photo-CVD method.As a new material, amorphous superlattice-structure films were fabricated by the photo-CVD method for the first time. Superlattice structure p-layer a-Si solar cells were fabricated, and a conversion efficiency of 10.5% was obtained.For the fabrication of integrated type a-Si solar cell modules, a laser pattering method was investigated. A thermal analysis of the multilayer structure was done. It was confirmed that selective scribing for a-Si, TCO and metal film is possible by controlling the laser power density. Recently developed a-Si solar power generation systems and a-Si solar cell roofing tiles are also described.  相似文献   
992.
The authors describe a novel design concept for enhancement (E) and depletion (D) mode FET formation using i-AlGaAs/n-GaAs doped-channel hetero-MISFET (DMT) and a novel self-aligned gate process technology for submicrometer-gate DMT-LSIs based on E/D logic gates. 0.5-μm gate E-DMTs (D-DMTs) with a lightly doped drain (LDD) structure show an average Vt of 0.18 (-0.46) V, a Vt standard deviation of 22.6 (24.9) mV, and a maximum transconductance of 450 (300) mS/mm. The Vt shift is less than 50 mV with a decrease in gate length down to 0.5 μm. The gate forward turn-on voltage Vf is more than 0.9 V, i.e. about 1.6 times that for MESFETs. This superiority in V f, preserved in the high-temperature range, leads to an improvement in noise margin tolerance by a factor of three. In addition, 31-stage ring oscillators operate with a power consumption of 20 (1.0) mW/gate and a propagation delay of 4.8 (14.5) ps/gate. Circuit simulation based on the experimental data predicts 140 ps/gate and 1 mW/gate for DMT direct-coupled FET logic circuits under standard loading conditions. DMTs and the technology developed here are very attractive for realizing low-power and/or high speed LSIs  相似文献   
993.
Institute for Inorganic Chemistry, Siberian Branch, USSR Academy of Sciences. Translated from Zhurnal Strukturnoi Khimii, Vol. 30, No. 4, pp. 170–172, July–August, 1989.  相似文献   
994.
Simulation can be used to determine the effects of different combinations of in-process and system burn-in times. It is shown that optimal burn-in at each stage of component assembly is not always optimal for the final system. Simulation is used to evaluate a nonrepairable system and provides individual component burn-in times that optimize the mean residual life of the assembled system  相似文献   
995.
996.
Summary We study solutions of the conormal derivative problem for uniformly parabolic equations in divergence form. Under weak regularity hypotheses on the operator, the global Hölder continuity of the gradient of a weak solution is established. The method of proof is based on [5] and the results extend those in [7, Section V.7].Sponsored by the National Science Foundation under Grant DMS-8315545.  相似文献   
997.
A compact fiber-optic magnetometer constructed using a short piece of amorphous metal wire (5-cm long×100-μm diameter) as the magnetostrictive transducer is discussed. The inherently large ratio of length to cross-sectional area results in a low demagnetization along the axial direction. A magnetostrictive constant of 5×10-5 /Oe2, which is 10-50 times larger than the reported values for transducers made from Metglas ribbons, was measured. Minimum detectable magnetic fields on the order of 10-5 Oe/Hz1/2 at 1 Hz were achieved using a 5-cm-long sensing fiber  相似文献   
998.
999.
The use of multigrid methods in complex fluid flow problems is still under development. In this paper a full multigrid procedure has been incorporated in a finite volume solution for predicting fully developed fluid flow in a streamwise periodic geometry. Steady computations in two-dimensional body fitted co-ordinates have shown considerable savings in computation time by this multigrid method.  相似文献   
1000.
A new principle for a high speed BiCMOS differential track-and-hold circuit based on current mode processing is presented, and simulation results are given. The main characteristics are an acquisition time of 5.5 ns for 8 bit precision and a small-signal bandwidth of 1 GHz  相似文献   
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