Comparative analysis of RF LDMOS capacitance reliability under accelerated ageing tests

This paper presents the results of comparative reliability study of C–V characteristics through three accelerated ageing tests for stress applied to an RF LDMOS: Thermal shock tests (TST, air–air test), thermal cycling tests (TCT, air–air test) and high temperature storage life (HTSL). The two first tests are carried out with a drain current flowing through the device during stress. The investigation findings of electrical parameter degradations after various ageing tests are discussed. Feedback capacitance (Crs) is reduced by 16% and gate–drain capacitance (Cgd) by 42%. This means that the tracking of these parameters enables to consider the hot carrier injection as the dominant degradation phenomenon. A physical simulation software has been used to confirm qualitatively degradation phenomena.     

Slotted microcavity ring resonators for optical storage applications

In this paper, slotted microcavity ring resonators based optical storage devices are proposed and analyzed by means of multiresolution time domain technique. The effect of the structure geometrical parameters on the coupling efficiency, normalized transmission spectra and quality factor has been thoroughly investigated and compared to that of the conventional no-slot microring resonator. The suggested slotted configurations increase the quality factor at a fixed gap size between the central ring and input/output waveguides. In addition, the desired compromise between the coupling efficiency and resonance effect inside the ring can be achieved by mere optimization of the slot geometrical characteristics.     

Using Stochastic Differential Equation for Verification of Noise in Analog/RF Circuits

Today’s analog/RF design and verification face significant challenges due to circuit complexity, process variations and short market windows. In particular, the influence of technology parameters on circuits, and the issues related to noise modeling and verification still remain a priority for many applications. Noise could be due to unwanted interaction between the circuit elements or it could be inherited from the circuit elements. In addition, manufacturing disparity influence the characteristic behavior of the manufactured circuits. In this paper, we propose a methodology for modeling and verification of analog/RF designs in the presence of noise and process variations. Our approach is based on modeling the designs using stochastic differential equations (SDE) that will allow us to incorporate the statistical nature of noise. We also integrate the device variation due to 0.18μ m fabrication process in an SDE based simulation framework for monitoring properties of interest in order to quickly detect errors. Our approach is illustrated on nonlinear Tunnel-Diode and a Colpitts oscillator circuits.     

Two-Qubit Local Fisher Information Correlation beyond Entanglement in a Nonlinear Generalized Cavity with an Intrinsic Decoherence

In this paper, we study a Hamiltonian system constituted by two coupled two-level atoms (qubits) interacting with a nonlinear generalized cavity field. The nonclassical two-qubit correlation dynamics are investigated using Bures distance entanglement and local quantum Fisher information under the influences of intrinsic decoherence and qubit–qubit interaction. The effects of the superposition of two identical generalized coherent states and the initial coherent field intensity on the generated two-qubit correlations are investigated. Entanglement of sudden death and sudden birth of the Bures distance entanglement as well as the sudden changes in local Fisher information are observed. We show that the robustness, against decoherence, of the generated two-qubit correlations can be controlled by qubit–qubit coupling and the initial coherent cavity states.     

Performance Evaluation and Effectiveness of the Reverberation Room

This research presents a thorough evaluation of the reverberation room at Acoustics Laboratory in National Institute of Standards (NIS) according to the related international standards. The evaluation aims at examining the room performance and exploring its effectiveness in the frequency range from 125 Hz to 10000 Hz according to the international standard requirements. The room, which was designed and built several years ago, is an irregular rectangular shape free from diffusers. Its volume is about 158.84 m³, which meets the requirement of the ISO 354 standard L_max < 1.9V^1/3. Cut-off frequencies of one and one-third octave are 63 Hz and 100 Hz respectively; however Schroder frequency is 400 Hz. Calculations of cut-off frequency and modal density showed adequate modes that give acceptable uniformity starting comfortably from frequency of 125 Hz. The room has a reverberation time that is suitable for its size over the frequency range of interest. The room sound absorption surface area and its sound absorption coefficient satisfy the criteria given in ISO 3741 and ISO 354. There is an accepted diffuse sound field inside the room due to the standard deviation of measured sound level, which is less than 1.5 dB over all the frequency range. The only exception was 125 Hz which may be due to a lack of diffusivity of the sound field at this frequency. The evaluation proves that the NIS reverberation room is in full agreement with the international standards, which in turns qualifies the room to host measurements inside without concerns.     

Effect of electron irradiation on the crystalline structure of hgte and hgl-xcdxte thin films

The influence of 8 MeV electrons on the crystalline structure of HgTe and Hg1-xCdxTe thin films was studied. HgTe and Hg1-xCdxTe layers were obtained by thermal evaporation and condensation in vacuum on optically flat silica glass substrates heated at different temperatures.

One finds that the results of irradiation of HgTe and Hg_1-xCd_xTe thin films with 8 MeV electrons depend on the preparation conditions of the samples, and therefore on the level of perfection of the crystalline structure and the quantity of nonstoichiometric atoms.     

Spectrophotometric Determination of Pyrithioxin in Pharmaceutical Preparations

Rapid direct and induced difference spectrophotometric methods for determination of pyrithioxin in single dosage forms (tablets and syrups) are reported. The direct methods depend upon measurement of the absorbance of pyrithioxin in different media at λ_max i-e at 296 nm in 0.1 M hydrochloric acid, at 328 nm in citric acid-phosphate buffer of pH 7 and at 314 nm in 0.1 M sodium hydroxide. The mean percentage recovery of the authentic samples were 100.55±0.43, 101.21±0.58 and 100.29±0.64 respectively (P=0.05). The absorbance difference methods are based upon either measurement of the difference between the acid and the alkaline solutions i-e. Δ A (Alk-Acid) at 318 nm with an accuracy of 100.72±0.88 or the absorbance difference between the acid and neutral solutions i-e Δ A (pH 7-acid) at 328 nm with an accuracy of 100.31±0.68.     

Two stage electrostatic separator for the recycling of plastics from waste electrical and electronic equipment

The aim of study was to evaluate the effectiveness of a new facility for recycling of plastics from granular waste electrical and electronic equipment. The installation consists of two sections, the products of a first tribo-aero-electrostatic separator being subsequently treated in two free-fall electrostatic separators. The tests were performed on a mixture of polycarbonate (PC) and polyamide (PA). Analysis of the purity of the products obtained was performed using a program of image processing in MATLAB. Products of very high purity (roughly 95% for both PC and PA) were obtained at a recovery rate higher than 70%.     

Theoretical analysis of the radiation effect on the transient behavior of optoelectronic integrated devices

Theoretical analysis of the radiation effect on transient behavior of an optoelectronic integrated device composed of a heterojunction phototransistor and a light emitting diode is studied theoretically. First, the transient behavior and the rise time of this device before radiation are investigated based on the frequency response of the constituent devices and the optical feedback inside the device. Second, the effect of neutron irradiation flux on the transient behavior of this device is theoretically studied. The results show that, by increasing the optical feedback inside the device, the rise time in the amplification mode is increased along with an increasing output, while that in the switching mode can be reduced effectively, and the neutron irradiation reduces the transient response and the rise time in both the amplification and switching modes. This type of model can be exploited as optical amplifier, optical switching device, and other applications.     

Influence of gamma radiation on morphology structure,electrochemical corrosion behavior and hardness of Ni–Cr based alloys

This study evaluates the effects of gamma radiation on structure, electrochemical corrosion behavior and Vickers hardness of commercial dental Nikkeli–Kromi–Polttosekoitus [Ni_65.2Cr_22.5Mo_9.5X_2.8 (X=Nb, Si, Fe and Mn)] alloy. The corrosion rate of Ni_65.2Cr_22.5Mo_9.5X_2.8 (X=Nb, Si, Fe and Mn) alloy with 0.5 M HCl is increased with increasing the exposure rate of gamma radiation. The corrosion resistance of Ni_65.2Cr_22.5Mo_9.5X_2.8 (X=Nb, Si, Fe and Mn) is varied and reaches a minimum value at 30 KGy. The corrosion potential value also is varied and reaches its highest value at 30 KGy. The Vickers hardness value of Ni_65.2Cr_22.5Mo_9.5X_2.8 (X=Nb, Si, Fe and Mn) alloy is decreased by increasing the gamma radiation dose. Also it is obvious from our results that the effects of gamma radiation at the surface are much higher as compared with deeper parts and the structure of the alloy is changed due to its exposure to gamma radiation.