Localization and the integer-quantized Hall effect: Diffusion constant for high Landau levels and white noise potential

The diffusion constant and the diagonal conductivity for non-interacting electrons in a two-dimensional, disordered system are studied. A homogeneous magnetic field perpendicular to the electron system is assumed. For weak short-range random potentials and high fields the Landau quantum numbern can be used as expansion parameter. In the limit of high Landau levels the system shows metallic behaviour. Corrections for finiten decrease the conductivity and indicate localized states in the whole energy band. A breakdown of the expansion and stronger localization are observed only for the lowest Landau levels if the typical experimental length scale of the quantized Hall effect is used.     

Vascular morphology by three-dimensional magnetic resonance imaging

A three-dimensional examination of blood vessels is provided using MR data from seven cases. The vascular surfaces are constructed with an algorithm that automatically follows the selected artery or vein and generates a projected three-dimensional gradient shaded image. Fast 3DFT pulse sequences were optimized to enhance the time-of-flight contrast of the intravascular region. By increasing the surface threshold value in a three-dimensional head study, the flesh of a patient's face was peeled away to demonstrate the superfacial temporal artery. Gated cardiac images show the great vessels and cardiac chambers. A three-dimensional view of the aorta shows an irregular surface in the vicinity of an adrenal tumor. 3D MR exams provide a non-invasive technique for assessing vascular morphology in a clinical setting.     

A Low-Supply-Voltage CMOS Sub-Bandgap Reference

A low-power (21 $muhbox{W}$ ) bandgap reference source that is operable from a nominal supply voltage of 1.4 V is described. The circuit provides an output voltage equal to the bandgap voltage having a low output resistance and allows resistive loading. It does not use resistors or operational amplifiers. Thus, the design is suitable for fabrication in any digital CMOS technology. The circuit uses a current conveyor and current mirrors to convert the proportional to absolute temperature voltage into a current using a MOSFET. The current is converted back to a voltage by using the functional inverse of the FET $v-i$ characteristics. This makes the voltage gain linear and temperature independent. The absence of back-gate bias is the reason for achieving the low supply voltage of operation. Simulation results using the transistor models for the 0.18-$mu$m TSMC process show that the voltage-variation over the temperature range 0 to 100 $^{circ} {hbox {C}}$ is $≪$1 mV.      

Cost-Efficient SHA Hardware Accelerators

This paper presents a new set of techniques for hardware implementations of Secure Hash Algorithm (SHA) hash functions. These techniques consist mostly in operation rescheduling and hardware reutilization, therefore, significantly decreasing the critical path and required area. Throughputs from 1.3 Gbit/s to 1.8 Gbit/s were obtained for the SHA implementations on a Xilinx VIRTEX II Pro. Compared to commercial cores and previously published research, these figures correspond to an improvement in throughput/slice in the range of 29% to 59% for SHA-1 and 54% to 100% for SHA-2. Experimental results on hybrid hardware/software implementations of the SHA cores, have shown speedups up to 150 times for the proposed cores, compared to pure software implementations.      

Distributed Transmit Antenna Selection (DTAS) Under Performance or Energy Consumption Constraints

Motivated by the transmit antenna selection (TAS) concept, used in Multiple-Input-Multiple-Output systems, we argue for distributed transmit antenna selection (DTAS), which corresponds to a method of selecting a subset of available relays in cooperative diversity systems. Assuming amplify and forward relays, the proposed selection method represents a low-complexity tool for determining the optimum relaying set. Two optimization problems are studied: the error probability minimization subject to total energy consumption constraints, and the dual one, the total energy consumption minimization under error performance constraints. Numerical examples verify the advantage of the proposed method in adapting the number of relaying terminals to the desired performance-consumption tradeoff.     

Mathematical modelling of the oxidation of nickel titanium alloys

A one-dimensional bulk reaction model for the oxidation of nickeltitanium is formulated, with preferential oxidation of titaniumbeing included. The modelling is directed at the better understandingof the dominant mechanisms involved in the oxidation processand their significance for the biocompatibility of the alloy.Two different regimes for the relative diffusivities of oxygenand the metals are investigated. By assuming fast bulk reactions,different asymptotic structures emerge in different parameterregimes and the resulting models take the form of moving boundaryproblems. Different profiles of nickel concentration are obtained:in particular a nickel-rich layer (observed in practice) ispresent below the oxide/metal interface for the case when oxygenand the metals diffuse at comparable rates.     

Crystallographic report: A new polymorph for bis[bis(N,N‐dibenzyldithiocarbamato)cadmium(II)]

The title compound is a centrosymmetric dimer with each cadmium in a distorted CdS₅ square pyramidal geometry. The Cd–S bond distances range from 2.5626(11) to 2.8459(11) Å. Copyright © 2004 John Wiley & Sons, Ltd.     

A Nonvolatile Organic Memory Device Using ITO Surfaces Modified by Ag‐Nanodots

We report on a single‐layer organic memory device made of poly(N‐vinylcarbazole) embedded between an Al electrode and ITO modified with Ag nanodots (Ag‐NDs). Devices exhibit high ON/OFF switching ratios of 10⁴. This level of performance could be achieved by modifying the ITO electrodes with some Ag‐NDs that act as trapping sites, reducing the current in the OFF state. Temperature dependence of the electrical characteristics suggest that the current of the low‐resistance state can be attributed to Schottky charge tunnelling through low‐resistance pathways of Al particles in the polymer layer and that the high‐resistance state can be controlled by charge trapping by the Al particles and Ag‐NDs.     

Tunable laser-based design and analysis for fractional lambda switches

Fractional lambda switching (FlambdaS) is a novel approach for traffic management over all-optical networks with sub-wavelength provisioning capability. The unique characteristic of FlambdaS is the utilization of UTC (coordinated universal time) for switching with minimum or no buffers. Several central research issues are still open in FlambdaS and need to be formally defined and analyzed. In this paper, we introduce three novel switch designs that are based on the use of tunable lasers (which can be replaced in the future with wavelength converters). First, the paper presents analytical results of scheduling feasibility, which measures the total number of possible different schedules for each switch design. Then it is shown that the architecture with the highest scheduling feasibility is strictly non blocking in the space domain. Next, the paper provides a closed form analysis of the blocking probability in the time domain, which is applicable for any strictly non-space blocking switch, using combinatorics. In addition, the paper provides measures of the switching hardware complexity, which, for the strictly non-blocking architecture, has the same switching complexity as Clos interconnection network, i.e., O(N'radic(N')) where N' is the number of optical channels.