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31.
Buffer analysis has traditionally relied heavily on the use of traffic models with short range (exponentially decaying) autocorrelation, e.g. Poisson and Markov modulated Poisson processes. Recent literature has suggested the presence of traffic with slowly (hyperbolically) decaying autocorrelation functions; these sources collectively and individually seem to be exhibiting the phenomenon of long range dependence (LRD). Furthermore, it has been claimed that this sort of traffic may exhibit behaviour, when buffered, that is advantageous in that a smaller buffer may be required than would be the case with non-LRD traffic. This phenomenon has been named the crossover effect, and the authors quantify its relevance to ATM networking, using simulation studies of a homogenous mix of chaotic sources. These show that there is a crossover effect, but the key finding is that this effect is much nearer to a buffer length of zero than was predicted by previous theoretical studies, actually occurring at a value so low that it has no practical significance 相似文献
32.
Ho K. I. J. Leung J. Y. T. Wei W. D. 《Journal of Algorithms in Cognition, Informatics and Logic》1994,16(3)
We consider the problem of preemptively scheduling a set of imprecise computation tasks on m ≥ 1 identical processors, with each task Ti having two weights, wi and w′i. Two performance metrics are considered: (1) the maximum w′-weighted error; (2) the total w-weighted error subject to the constraint that the maximum w′-weighted error is minimized. For the problem of minimizing the maximum w′-weighted error, we give an algorithm which runs in O(n3 log2n) time for multiprocessors and O(n2) time for a single processor. For the problem of minimizing the total w-weighted error subject to the constraint that the maximum w′-weighted error is minimized, we give an algorithm which also has the same time complexity. 相似文献
33.
This paper proposes a model for the parametric representation of linguistic hedges in Zadeh’s fuzzy logic. In this model each linguistic truth-value, which is generated from a primary term of the linguistic truth variable, is identified by a real number r depending on the primary term. It is shown that the model yields a method of efficiently computing linguistic truth expressions accompanied with a rich algebraic structure of the linguistic truth domain, namely De Morgan algebra. Also, a fuzzy logic based on the parametric representation of linguistic truth-values is introduced. 相似文献
34.
The reaction between the Sn-Ag-Cu solders and Ni at 250°C for 10 min and 25 h was studied. Nine different Sn-Ag-Cu solders,
with the Ag concentration fixed at 3.9 wt.% and Cu concentrations varied between 0.0–3.0 wt.%, were used. When the reaction
time was 10 min, the reactions strongly depended on the Cu concentration. At low-Cu concentrations (≦0.2 wt.%), only a continuous
(Ni1−xCux)3Sn4 layer formed at the interface. When the Cu concentration increased to 0.4 wt.%, a continuous (Ni1−xCux)3Sn4 layer and a small amount of discontinuous (Cu1−yNiy)6Sn5 particles formed at the interface. When the Cu concentration increased to 0.5 wt.%, the amount of (Cu1−yNiy)6Sn5 increased and (Cu1−yNi6)6Sn5 became a continuous layer. Beneath this (Cu1−yNiy)6Sn5 layer was a very thin but continuous layer of (Ni1−xCux)3Sn4. At higher Cu concentrations (0.6–3.0 wt.%), (Ni1−xCux)3Sn4 disappeared, and only (Cu1−yNiy)6Sn5 was present. The reactions at 25 h also depended strongly on the Cu concentration, proving that the strong concentration
dependence was not a transient phenomenon limited to a short reaction time. The findings of this study were rationalized using
the Cu-Ni-Sn isotherm. This study shows that precise control over the Cu concentration in solders is needed to produce consistent
results. 相似文献
35.
In this paper, we report that the phase transformation of Ni-B, Ni-P diffusion barriers deposited electrolessly on Cu, for the reason that the Ni-P layer is a more effective diffusion barrier than the Ni-B layer. The Ni3B crystallized was decomposed to Ni and B2O3 above 400 °C and the Ni3P crystallized was decomposed to Ni and P2O5 above 600 °C respectively in Ar atmosphere. Also, the Ni3B was decomposed to Ni and free B above 400 °C and the Ni3P was decomposed to Ni and free P above 600 °C respectively in H2 atmosphere. The decomposed Ni formed a solid solution with Cu. The Cu diffusion occurred above 400 °C for Ni-B layer and above 600 °C for Ni-P layer, respectively. Because the decomposition temperature of Ni-P layer is about 200 °C higher than that of Ni-B layer, the Ni-P layer is a more effective barrier for Cu than the Ni-B layer. 相似文献
36.
In this paper, we analyze the manufacturing lead time in a production system with BMAP (Batch Markovian Arrival process) input and post-operation operated under the N-policy. We use the factorization principle to derive the waiting time distribution (hence the manufacturing lead time) and the mean performance measures. A numerical example is provided. 相似文献
37.
Chan Sik Cho Jun Ho KimHeung-Jin Choi Tae-Jeong KimSang Chul Shim 《Tetrahedron letters》2003,44(14):2975-2977
Anilines react with epoxides in dioxane at 180°C in the presence of a catalytic amount of a ruthenium catalyst along with tin(II) chloride to afford 2-substituted indoles in moderate to good yields. 相似文献
38.
We have observed three-dimensional sponge-like structures as well as strips of connecting pits on the surface of the LR 115 detector after etching, which can be confused with the small tracks formed after short etching time. We have employed an atomic force microscope (AFM) to study these “damages” as well as genuine alpha tracks for short etching time. It was found that while the track and damage openings could be similar in size and shape, the depths for the damages were consistently smaller. Therefore, the depth of the pits will serve as a clear criterion to differentiate between tracks and other damages. The ability to discriminate between genuine tracks from other damages is most important for etching for short time intervals. 相似文献
39.
In this paper, we propose an efficient design method for area optimization in a digital filter. The conventional methods to reduce the number of adders in a filter have the problem of a long critical path delay caused by the deep logic depth of the filter due to adder sharing. Furthermore, there is such a disadvantage that they use the transposed direct form (TDF) filter which needs more registers than those of the direct form (DF) filter. In this paper, we present a hybrid structure of a TDF and DF based on the flattened coefficients method so that it can reduce the number of flip‐flops and full‐adders without additional critical path delay. We also propose a resource sharing method and sharing‐pattern searching algorithm to reduce the number of adders without deepening the logic depth. Simulation results show that the proposed structure can save the number of adders and registers by 22 and 26%, respectively, compared to the best one used in the past. 相似文献
40.
Yong Joon Park Min Gyu KimYoung-Sik Hong Xianglan WuKwang Sun Ryu Soon Ho Chang 《Solid State Communications》2003,127(7):509-514
Li[NixLi(1/3−2x/3)Mn(2/3−x/3)]O2 (X=0.17, 0.25, 0.33, 0.5) compounds are prepared by a simple combustion method. The Rietvelt analysis shows that these compounds could be classified as having the α-NaFeO2 structure. The initial charge-discharge and irreversible capacity increases with the decrease of x in Li[NixLi(1/3−2x/3)Mn(2/3−x/3)]O2. Indeed, Li[Ni0.50Mn0.50]O2 compound shows relatively low initial discharge capacity of 200 mAh/g and large capacity loss during cycling, with Li[Ni0.17Li0.22Mn0.61]O2 and Li[Ni0.25Li0.17Mn0.58]O2 compounds exhibit high initial discharge capacity over 245 mAh/g and stable cycle performance in the voltage range of 4.8 -2.0 V. On the other hand, XANES analysis shows that the oxidation state of Ni ion reversibly changes between Ni2+ and about Ni3+, while the oxidation state of Mn ion sustains Mn4+ during charge-discharge process. This result does not agree with the previously reported ‘electrochemistry model’ of Li[NixLi(1/3−2x/3)Mn(2/3−x/3)]O2, in which Ni ion changes between Ni2+ and NI4+. Based on these results, we modified oxidation-state change of Mn and Ni ion during charge-discharge process. 相似文献