共线量子散射方法研究D+CID体系

用共线量子散射方法计算D+CID体系的反应几率和传能几率。发现存在很强的振荡现象。体系的碰撞中间态的寿命的计算结果为fs-ps数量级。当某一反应通道打开时,在能量阈值附近通常都伴随着一些长寿命的碰撞中间态。这一点该体系中表现很比较明显。     

Depsides from Prunella vulgaris

IntroductionPrunella vulgaris L.(Labiatae) is a traditional Chinese drug and has hypotensive, antibacterial, anti-viral, anti-inflammatory, anti-tumor and hypoglycemic activities. Previously, the isolation and structural identification of a new triterpene saponin and five known compounds from the ethanol extracts of P. vulgaris were reported1. In this paper, we describe the isolation of four depsides and two phenylpropanoids from the same source. Their structures were established as butyl ro…     

二苯基锡不饱和烃基膦酸酯的合成及其结构表征

以二苯基二氯化锡和炔（烯）基膦酸盐为原料,在乙醇中反应,合成了８种新的二苯基锡不饱和烃基膦酸酯Ｐｈ２ＳｎＯ２Ｐ（Ｏ）Ｒ（Ｒ＝Ｃ－－－ＣＣ３Ｈ７－ｎ,Ｃ－－－ＣＣ４Ｈ９－ｎ,Ｃ－－－ＣＣ５Ｈ１１－ｎ,Ｃ－－－ＣＣ５Ｈ１３－ｎ,Ｃ－－－ＣＣＨ２ＯＣＨ３,Ｃ－－－ＣＣＨ２ＯＣ２Ｈ５,Ｃ－－－ＣＰｈ,ＣＨ－－－ＣＣｌＰｈ）,利用元素分析、ＩＲ,＾１ＨＮＭＲ和ＴＧ－ＤＡＴ对其组成的结构进行了表征。     

A novel PtII–dibenzo‐18‐crown‐6 (DB18C6) complex

The novel Pt^II–dibenzo‐18‐crown‐6 (DB18C6) title complex, μ‐[tetrakis­(thio­cyanato‐S)­platinum(II)]‐N:N′‐bis{[2,5,8,­15,18,21‐hexa­oxa­tri­cyclo­[20.4.0.1^9,14]­hexa­cosa‐1(22),9(14),10,12,23,25‐hexaene‐κ⁶O]­potassium(I)}, [K(C₂₀H₂₄O₆)]₂[Pt(SCN)₄], has been isolated and characterized by X‐ray diffraction analysis. The structure analysis shows that the complex displays a quasi‐one‐dimensional infinite chain of two [K(DB18C6)]⁺ complex cations and a [Pt(SCN)₄]^2? anion, bridged by K⁺?π interactions between adjacent [K(DB18C6)]⁺ units.     

带旋转自由度C^0类任意四边形板（壳）单元

基于Ｒｅｉｓｓｎｅｒ－Ｍｉｎｄｉｌｉｎ板弯曲理论和Ｖｏｎ－Ｋａｒｍａｎ大挠度理论,采用单元域内和边界位移插值一致性的概念,将四节点等参弯曲单元与Ａｌｌｍａｎ膜变形二次插值模式相结合,对层合板壳的大挠度分析提供了一种实用的带旋转自由度的四节点Ｃ＾０类板单元。大量算例表明：该单元对板壳结构的线性强度、稳定性和后屈曲分析都表现出良好的收敛性和足够的工程精度。     

毛细管电动色谱带电环糊精拆分N—FMOC氨基酸对映体

将负电性磺丁基－β－环糊精手性添加剂应用于毛细管电泳氨基酸对映体的拆分研究中,对８种氨基酸对映体与９－芴甲基氧基甲酰氯（ＦＭＯＣ－Ｃｌ）生成的衍生物进行了分离,其中５种得到了基线分离。考察了背景电解质ｐＨ值及磺丁基－β－环糊精的浓度对Ｎ－ＦＭＯＣ氨基酸对映体拆分的影响。     

Conformational Analysis of Biphenyl Derivatives. I. A Novel Steric Constant from the Internal Rotation Rate of 2,2′‐Bis‐(N‐Substituted Carbamoylmethyl)Biphenyl by Means of Dynamic NMR

A novel scale of steric substituent constant E_s^D is defined from the correlation of the logarithms of the internal rotation rate (k_r) at 393 K with Hancock (E_s^c) steric constant by means of dynamic NMR. In the inhibition of Pseudomona species lipase by 2,2′‐bis‐(N‐substituted carbamoylmethyl)biphenyls (1‐8), the logarithms of bimolecular rate constants are multiply correlated with both the Taft substituent constant σ* and E_s^D.     

1,3‐Dipolar cycloaddition of nitrile oxides to methyl 3‐(p‐nitrobenzoyloxy)acrylate: Methyl 3‐(p‐nitrobenzoyloxy)acrylate as a methyl propiolate equivalent with reverse regioselectivity

3‐Aryl‐4‐methoxycarbonylisoxazoles were prepared from the reaction of a variety of substituted benzonitrile oxides with methyl 3‐(p‐nitrobenzoyloxy)acrylate in moderate to good yields.     

A new on-chip interconnect crosstalk model and experimentalverification for CMOS VLSI circuit design

A new, simple closed-form crosstalk model is proposed. The model is based on a lumped configuration but effectively includes the distributed properties of interconnect capacitance and resistance. CMOS device nonlinearity is simply approximated as a linear device. That is, the CMOS gate is modeled as a resistance at the driving port and a capacitance at a driven port. Interconnects are modeled as effective resistances and capacitances to match the distributed transmission behavior. The new model shows excellent agreement with SPICE simulations. Further, while existing models do not support the multiple line crosstalk behaviors, our model can be generalized to multiple lines. That is, unlike previously published work, even if the geometrical structures are not identical, it can accurately predict crosstalk. The model is experimentally verified with 0.35-μm CMOS process-based interconnect test structures. The new model can be readily implemented in CAD analysis tools. This model can be used to predict the signal integrity for high-speed and high-density VLSI circuit design     

A novel simplified process for fabricating a very high densityp-channel trench gate power MOSFET

A novel simplified fabrication method of a very high density p-channel trench gate power MOSFET using four mask layers and nitride/TEOS sidewall spacers is realized. The proposed process showed improved on-resistance characteristics of the device with increasing cell density and the cost-effective production capability due to the lesser number of processing steps. By using this process technique, a remarkably increased high density (100 Mcell/inch²) trench gate power MOSFET with a cell pitch of 2.5 μm could be effectively realized. The fabricated device had a low specific on-resistance of 1.1 mΩ-cm² with a breakdown voltage of -36 V