Relationship between texture and electromigration lifetime in sputtered AI-1% Si thin films

The relationship among the grain structure, texture, and electromigration lifetime of four Al-1% silicon metallizations produced under similar sputtering conditions was explored. The grain sizes and distributions were similar and the grain structure was near-bamboo for all metallizations. All metallizations exhibited a near-(111) fiber texture, as determined by the pole figure technique. Differences in electromigration behavior were noted. Three of the metallizations exhibited a bimodal failure distribution while the fourth was monomodal and had the longest electromigration lifetime. The electromigration lifetime was directly related to the strength of the (111) fiber texture in the metallization as anticipated. However, whereas the grain size distribution has an effect on the electromigration lifetime when metallization lines are several grains wide, the electromigration lifetime of these near-bamboo metallizations appeared independent of the grain structure. It was also observed that a number of failures occurred in the 8 μm interconnect supplying the 5 μm wide test lines. This apparently reflects an increased susceptibility of the wider interconnect lines to electromigration damage.     

Mechanismus der Charge-transfer-Polymerisation. 12. Mitt. Der Einflu? der Wellenl?nge des einfallenden Lichtes auf die kationische Photopolymerisation von N-Vinylcarbazol mit Bromund Chloranil in Benzol

Ohne Zusammenfassung     

1.0?1.6 ?m planar avalanche photodiode by LPE grown InP/InGaAs/InP DH structure

A planar avalanche photodiode is for the first time fabricated using the (111)A face of InP/InGaAs/InP double-hetero-(DH)-structure. The top InP layer where the carrier-multiplication takes place is directly grown on the In0.53Ga0.47As layer by liquid phase epitaxy. Maximum avalanche multiplication factors of 25 are obtained in a wavelength range of 1.0?1.6 ?m. Quantum efficiencies are 70?80% at this wavelength range.     

Phase transition of quaternary alkyl halide salts of diazabicyclo [2.2.2] octane

A series of quaternary alkyl halide salts of diazabicyclo [2.2.2] octane were found to exhibit first-order phase transitions at 64–103°C. Drastic changes of halide anion conductivities by three to four orders of magnitude were found to occur at the transition temperatures. X-ray diffractions of powdered sample revealed that the transition was induced by a structural change of the crystal. Differential scanning calorimetries were also measured.     

Monolithic GaInAs quad-p-i-n photodiodes for polarization-diversity optical receivers

GaInAs quad p-i-n photodiodes which monolithically integrate two sets of twin-p-i-n photodiodes have been fabricated for a polarization-diversity optical receiver designed for practical coherent lightwave transmission systems. Each p-i-n photodiode achieved a very small capacitance of 616-66 fF, a dark current of 6 pA-6 nA, and a high quantum efficiency of 86-88%. The cutoff frequency of the twin-p-i-n photodiodes exceeded 13 GHz. A common-mode rejection ratio (CMRR) of -30 dB was measured for the two sets up to 10 GHz. The optical/electrical crosstalk between the two sets of twin-p-i-n photodiodes was about -40 dB at 14 GHz.<>     

Investigation of a short conical helix antenna

The input impedance, radiation pattern, axial ratio, and power gain of a conical helix antenna with a short arm are calculated as a function of frequency, using theoretically determined current distributions. It is shown that the antenna radiates a circularly polarized wave over a frequency range ratio of about 1:1.2, having a power gain of about 7.7 dB. The experimental results are also presented.     

Untersuchung der leitenden und dielektrischen Eigenschaften von Charge-transfer-Komplexen. 1. Mitt. Polykation-TCNQ-Salze

Ohne Zusammenfassung     

Easily manufactured high-speed back-illuminated GaInAs/InP p-i-n photodiode

A back-illuminated planar GaInAs/InP p-i-n photodiode has been fabricated with a simple fabrication process to obtain a high-speed detector. The photodiode has a capacitance as low as 54 fF, a dark current of about 3 pA, and a quantum efficiency of 74% at a 1.55- mu m wavelength. A cutoff frequency of 31 GHz was obtained when the photocurrent was about 500 mu A and the bias voltage was -10 V.<>     

High-speed flip-chip InP/InGaAs avalanche photodiodes with ultralowcapacitance and large gain-bandwidth products

Planar InP/InGaAs avalanche photodiodes (APDs) have been fabricated by adopting a flip-chart configuration and a monolithic lens structure. These APDs exhibit an ultralow capacitance of 70 fF, a quantum efficiency of 80%, a wide bandwidth of 7 GHz, and a large gain-bandwidth product of 80 GHz