Effect of thermal annealing on optical and photoelectric properties of microcrystalline hydrogenated silicon films

The effect of thermal annealing in the temperature range T _a=300–600°C of films of microcrystal-line hydrogenated silicon (μc-Si:H) lightly doped with boron on the spectral dependences of the absorption coefficient (α) at photon energies hν=0.8–2.0 eV, dark conductivity (σ_d), and photoconductivity (Δσ_ph) was studied at room temperature. With increasing annealing temperature, a nonmonotonic variation of α (at hν<1.2 eV), σ_d, and Δσ_ph was observed. The data obtained are attributed to a change in the concentration of electrically active impurities and formation of defects, caused by hydrogen effusion and bond restructuring at high annealing temperatures.     

Thermal conductivity of doped PbTe-based solid solutions with off-center impurities

The coefficients of thermopower and electrical and thermal conductivity in the PbTe_0.8Se_0.1 S _0.1 solid solution with electron concentration (4.6–54) × 10¹⁸ cm^?3 are studied in the range of 85–300 K (and in some cases up to 700 K). The temperature dependences of electrical and thermal conductivity indicate that the low-temperature electron and phonon scattering initiated by the off-center impurity of sulfur exists. The temperature dependences of the electronic and lattice components of thermal conductivity are calculated in the approximation of a parabolic spectrum and electron scattering by acoustic phonons and neutral substitutional impurities. The lattice thermal conductivity is found to have a feature in the form of a shallow minimum in the range of 85–250 K. A similar feature, while not so clearly pronounced, is found to exist also in Pb_1?x Sn_xTe_1?x Se_x alloys (x≥0.15) with an off-center tin impurity. An analysis of the possible origins of this effect suggests that, at low temperatures, the Lorentz numbers L of the materials under study are smaller than the L₀ numbers employed which correspond to the above scattering mechanisms. The cause of the decrease in L is related to electron scattering at two-level systems, a mechanism whose effect grows with increasing electron energy. An analysis of experimental data obtained at high temperatures, as well as on undoped samples with the lowest possible carrier concentrations, yields the values of L for samples with different electron densities. The minimum value L/L₀ = 0.75 is obtained for a lightly doped sample at ～130 K.     

A left-handed composite medium based on waveguiding structures with a bianisotropic filling

A new composite medium based on waveguiding structures loaded with bianisotropic gratings of planar double split rings (PDSRs) and planar helices is considered. The microwave transmission spectra of this medium are studied experimentally. The effective parameters of the medium are determined theoretically, and its passbands are investigated. The characteristics of the medium are compared to those of infinite homogeneous bianisotropic media. A relationship between the spectral transmission characteristics and the type of resonance excitation is established. The transparency bands and overforbidden bands of the composite medium are revealed. The combinations of the medium’s effective parameters that correspond to these bands are determined. It is shown that the transparency bands where the medium is characterized simultaneously by negative permittivity and negative permeability can be identified.     

Estimating and reducing the memory requirements of signal processing codes for embedded systems

Most embedded systems have limited amount of memory. In contrast, the memory requirements of the digital signal processing (DSP) and video processing codes (in nested loops, in particular) running on embedded systems is significant. This paper addresses the problem of estimating and reducing the amount of memory needed for transfers of data in embedded systems. First, the problem of estimating the region associated with a statement or the set of elements referenced by a statement during the execution of nested loops is analyzed. For a fixed execution ordering, a quantitative analysis of the number of elements referenced is presented; exact expressions for uniformly generated references and a close upper and lower bound for nonuniformly generated references are derived. Second, in addition to presenting an algorithm that computes the total memory required, this paper also discusses the effect of transformations (that change the execution ordering) on the lifetimes of array variables, i.e., the time between the first and last accesses to a given array location. The term maximum window size is introduced, and quantitative expressions are derived to compute the maximum window size. A detailed analysis of the effect of unimodular transformations on data locality, including the calculation of the maximum window size, is presented.     

Computation of Running Averages

This brief presents and compares several recursive and nonrecursive techniques for the efficient computation of the running average of discrete signals. First of all, the standard recursive algorithm is considered and its long-term accuracy is assessed when the floating-point arithmetic is employed. A cheap refreshing strategy is proposed as a means of keeping the computed value close enough to the exact one. Then, two alternative nonrecursive algorithms, requiring only log₂N additions, are developed, which are as reliable and accurate as the direct implementation     

Higher Stability Limits for the Symplectic FDTD Method by Making Use of Chebyshev Polynomials

A new scheme is introduced for obtaining higher stability performance for the symplectic finite-difference time-domain (FDTD) method. Both the stability limit and the numerical dispersion of the symplectic FDTD are determined by a function zeta. It is shown that when the zeta function is a Chebyshev polynomial the stability limit is linearly proportional to the number of the exponential operators. Thus, the stability limit can be increased as much as possible at the cost of increased number of operators. For example, the stability limit of the four-exponential operator scheme is 0.989 and of the eight-exponential operator scheme it is 1.979 for fourth-order space discretization in three dimensions, which is almost three times the stability limit of previously published symplectic FDTD schemes with a similar number of operators. This study also shows that the numerical dispersion errors for this new scheme are less than those of the previously reported symplectic FDTD schemes     

A study of the energy consumption characteristics of cryptographic algorithms and security protocols

Security is becoming an everyday concern for a wide range of electronic systems that manipulate, communicate, and store sensitive data. An important and emerging category of such electronic systems are battery-powered mobile appliances, such as personal digital assistants (PDAs) and cell phones, which are severely constrained in the resources they possess, namely, processor, battery, and memory. This work focuses on one important constraint of such devices-battery life-and examines how it is impacted by the use of various security mechanisms. In this paper, we first present a comprehensive analysis of the energy requirements of a wide range of cryptographic algorithms that form the building blocks of security mechanisms such as security protocols. We then study the energy consumption requirements of the most popular transport-layer security protocol: Secure Sockets Layer (SSL). We investigate the impact of various parameters at the protocol level (such as cipher suites, authentication mechanisms, and transaction sizes, etc.) and the cryptographic algorithm level (cipher modes, strength) on the overall energy consumption for secure data transactions. To our knowledge, this is the first comprehensive analysis of the energy requirements of SSL. For our studies, we have developed a measurement-based experimental testbed that consists of an iPAQ PDA connected to a wireless local area network (LAN) and running Linux, a PC-based data acquisition system for real-time current measurement, the OpenSSL implementation of the SSL protocol, and parameterizable SSL client and server test programs. Based on our results, we also discuss various opportunities for realizing energy-efficient implementations of security protocols. We believe such investigations to be an important first step toward addressing the challenges of energy-efficient security for battery-constrained systems.     

Electrical and photoelectric properties of electrochemically fabricated SnO2/Cd0.4Zn0.6S/CdTe solar cells

Solar cells based on SnO₂/Cd_0.4Zn_0.6S/CdTe heterostructures are fabricated by electrochemical deposition, and the dependences of their electrical and photoelectric properties on the thermal annealing conditions are studied. It is shown that thermal annealing reduces the tunnel currents by almost two orders of magnitude. The best conditions of thermal annealing are determined (t = 300°C and τ = 9 min). These conditions provide the highest photosensitivity of the heterostructures under study (I _sc ≈ 21.2 mA/cm², U _oc ≈ 813 mV, and η = 14.7%).     

Photoemission of polarized electrons from InAlGaAs/GaAs superlattices with minimum conduction band offsets

Photoemission of polarized electrons from heterostructures based on InAlGaAs/GaAs superlattices with minimum conduction-band offsets is investigated. The comparison of the excitation energy dependence of the photoemission polarization degree with the calculated spectra make it possible to determine the polarization losses at different stages of the photoemission. A maximum polarization of P = 91% and a quantum yield of 0.14% are close to the best results obtained for photocathodes on the basis of strained semiconductor superlattices.     

Towards intelligent dressing

The aim of this article is to state the principles of an intelligent monitoring and control system for the grinding machine, comprising the dressing process as well as grinding stability.