首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   6505篇
  免费   170篇
  国内免费   47篇
化学   3710篇
晶体学   35篇
力学   208篇
数学   1274篇
物理学   918篇
无线电   577篇
  2022年   46篇
  2021年   67篇
  2020年   71篇
  2019年   74篇
  2018年   70篇
  2017年   58篇
  2016年   109篇
  2015年   122篇
  2014年   141篇
  2013年   325篇
  2012年   323篇
  2011年   343篇
  2010年   234篇
  2009年   227篇
  2008年   322篇
  2007年   336篇
  2006年   328篇
  2005年   294篇
  2004年   288篇
  2003年   234篇
  2002年   220篇
  2001年   113篇
  2000年   100篇
  1999年   116篇
  1998年   81篇
  1997年   76篇
  1996年   98篇
  1995年   82篇
  1994年   86篇
  1993年   94篇
  1992年   69篇
  1991年   52篇
  1990年   82篇
  1989年   65篇
  1988年   63篇
  1987年   65篇
  1986年   53篇
  1985年   80篇
  1984年   87篇
  1983年   56篇
  1982年   83篇
  1981年   88篇
  1980年   99篇
  1979年   82篇
  1978年   82篇
  1977年   81篇
  1976年   79篇
  1975年   56篇
  1974年   50篇
  1973年   62篇
排序方式: 共有6722条查询结果,搜索用时 53 毫秒
61.
We compute at any temperature the free energy of the multi p-spin spherical model when only terms for p even are considered. Work partially supported by an NSF grant  相似文献   
62.
63.
A nonlinear regeneration pulsed oscillator driven by a monochromatic source has been built. Subharmonics of the resonance carrier/modulation are measured with an accuracy of 10-10 thanks to the use of a double beats measurement set-up. The multiscale analysis of frequency readings reveals a rich fine structure which is in agreement with the nonlinear topological approach of synchronized states.  相似文献   
64.
We have grown Ge x Si1-x (0 <x < 0.20,1000–3000Å thick) on small growth areas etched in the Si substrate. Layers were grown using both molecular beam epitaxy (MBE) at 550° C and rapid thermal chemical vapor deposition (RTCVD) at 900° C. Electron beam induced current images (EBIC) (as well as defect etches and transmission electron microscopy) show that 2800Å-thick, MBE Ge0.19Si0.81 on 70-μm-wide mesas have zerothreading and nearly zero misfit dislocations. The Ge0.19Si{0.81} grown on unpatterned, large areas is heavily dislocated. It is also evident from the images that heterogeneous nucleation of misfit dislocations is dominant in this composition range. 1000Å-thick, RTCVD Ge0.14Si0.86 films deposited on 70 μm-wide mesas are also nearly dislocation-free as shown by EBIC, whereas unpatterned areas are more heavily dislocated. Thus, despite the high growth temperatures, only heterogeneous nucleation of misfit dislocations occurs and patterning is still effective. Photoluminescence spectra from arrays of GeSi on Si mesas show that even when the interface dislocation density on the mesas is high, growth on small areas results in a lower dislocation density than growth on large areas.  相似文献   
65.
Thee + e ?K + K ? cross section has been measured from about 750 events in the energy interval \(1350 \leqq \sqrt s \leqq 2400 MeV\) with the DM2 detector at DCI. TheK ± form factor |F F ±| cannot be explained by the ρ, ω, ? and ρ′(1600). An additional resonant amplitude at 1650 MeV has to be added as suggested by a previous experiment.  相似文献   
66.
A complete and consistent set of 95 Benson group additive values (GAV) for the standard enthalpy of formation of hydrocarbons and hydrocarbon radicals at 298 K and 1 bar is derived from an extensive and accurate database of 233 ab initio standard enthalpies of formation, calculated at the CBS-QB3 level of theory. The accuracy of the database was further improved by adding newly determined bond additive corrections (BAC) to the CBS-QB3 enthalpies. The mean absolute deviation (MAD) for a training set of 51 hydrocarbons is better than 2 kJ mol(-1). GAVs for 16 hydrocarbon groups, i.e., C(C(d))(3)(C), C-(C(d))(4), C-(C(t))(C(d))(C)(2), C-(C(t))(C(d))(2)(C), C-(C(t))(C(d))(3), C-(C(t))(2)(C)(2), C-(C(t))(2)(C(d))(C), C-(C(t))(2)(C(d))(2), C-(C(t))(3)(C), C-(C(t))(3)(C(d)), C-(C(t))(4), C-(C(b))(C(d))(C)(H), C-(C(b))(C(t))(H)(2), C-(C(b))(C(t))(C)(H), C-(C(b))(C(t))(C)(2), C(d)-(C(b))(C(t)), for 25 hydrocarbon radical groups, and several ring strain corrections (RSC) are determined for the first time. The new parameters significantly extend the applicability of Benson's group additivity method. The extensive database allowed an evaluation of previously proposed methods to account for non-next-nearest neighbor interactions (NNI). Here, a novel consistent scheme is proposed to account for NNIs in radicals. In addition, hydrogen bond increments (HBI) are determined for the calculation of radical standard enthalpies of formation. In particular for resonance stabilized radicals, the HBI method provides an improvement over Benson's group additivity method.  相似文献   
67.
Bis(triphenylphosphine)(η-cyclohexa-1,3-diene)rhenium trihydride, (Ph3P)2(η-C6H8)ReH3 (I) crystallises in the space group C2/c with cell dimensions a 22.76(2), b 10.14(1) c 29.813(6) Å, β 97.69(8)°. The final refinement of 126 variables using 1580 non-zero reflections resulted in a final R value of 0.064. In spite of uncertainties in some of the atomic positions, the structure of I is compatible with a trihydrido diene compound with a distorted pentagonal bipyramidal configuration, rather than with a dihydrido cyclohexenyl compound having an “agostic” CH ? Re interaction. The factors which govern the structure of the complexes (Ph3P)2(η-1,3-diene)ReH3 are discussed.  相似文献   
68.
The reaction between dibutyltin dilaurate (DBTL) and chloro-4-hexene-2 (containing its isomer chloro-2-hexene-3) as a model compound for the allylic chlorine atom in poly(vinyl chloride) has been studied in dichlorobutane solution at 80°C. The reactions observed—elimination of HCl to give hexadiene and substitution of the laurate group to give hexenyl laurate—are believed to obey E2 and SN2 mechanisms through a common intermediate carbocation, with a rather low selectivity towards the substitution owing to the associated structure of the DBTL. The kinetics are complex because of the complex nature of the exchange reaction between DBTL and Bu2SnCl2. A reverse reaction between the hexenyl laurate and the organo-tin chloride is proposed to explain the limitation of the substitution reaction.  相似文献   
69.
70.
The acid-hydrolysis of an organo-bridged bisdiethoxysilylated molecular precursor bearing urea groups, (EtO)2MeSi(CH2)3NHCONH(CH2)12NHCONH(CH2)3SiMe(OEt)2, has been performed in pure aqueous medium. Scanning electron microscopy (SEM) analysis of the resulting insoluble solid revealed plate-like forms with a lamellar structure as determined by powder X-ray diffraction (PXRD) studies with a sharp peak at 28.5 Å. The solid state 29Si MAS-NMR spectrum of this bridged siloxane hybrid is consistent with a moderately condensed material with complete preservation of the Si–C bonds throughout the hybrid network. In comparison, the classical sol–gel hydrolysis-condensation of the molecular precursor in ethanol with stoichiometric amount of water and fluoride anion as catalyst produced an amorphous featureless solid.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号