Evolution equations for shapes and geometries

The first object of this paper is to introduce a new evolution equation for the characteristic function of the boundary Γ of a Lipschitzian domain Ω in the N-dimensional Euclidean space under the influence of a smooth time-dependent velocity field. The originality of this equation is that the evolution takes place in an L^p-space with respect to the (N − 1)-Hausdorff measure. A second more speculative objective is to discuss how that equation can be relaxed to rougher velocity fields via some weak formulation. A candidate is presented and some of the technical difficulties and open issues are discussed. Continuity results in several metric topologies are also presented. The paper also specializes the results on the evolution of the oriented distance function to initial sets with zero N-dimensional Lebesgue measure.     

An EKV-based high voltage MOSFET model with improved mobility and drift model

An EKV-based high voltage MOSFET model is presented. The intrinsic channel model is derived based on the charge based EKV-formalism. An improved mobility model is used for the modeling of the intrinsic channel to improve the DC characteristics. The model uses second order dependence on the gate bias and an extra parameter for the smoothening of the saturation voltage of the intrinsic drain. An improved drift model [Chauhan YS, Anghel C, Krummenacher F, Ionescu AM, Declercq M, Gillon R, et al. A highly scalable high voltage MOSFET model. In: IEEE European solid-state device research conference (ESSDERC), September 2006. p. 270–3; Chauhan YS, Anghel C, Krummenacher F, Maier C, Gillon R, Bakeroot B, et al. Scalable general high voltage MOSFET model including quasi-saturation and self-heating effect. Solid State Electron 2006;50(11–12):1801–13] is used for the modeling of the drift region, which gives smoother transition on output characteristics and also models well the quasi-saturation region of high voltage MOSFETs. First, the model is validated on the numerical device simulation of the VDMOS transistor and then, on the measured characteristics of the SOI-LDMOS transistor. The accuracy of the model is better than our previous model [Chauhan YS, Anghel C, Krummenacher F, Maier C, Gillon R, Bakeroot B, et al. Scalable general high voltage MOSFET model including quasi-saturation and self-heating effect. Solid State Electron 2006;50(11–12):1801–13] especially in the quasi-saturation region of output characteristics.     

A New Differential Method Applied to the Study of Arbitrary Cross Section Microstructured Optical Fibers

The present work adapts a recent grating theory called “Fast Fourier factorization” to cylindrical coordinates in order to study microstructured optical fibers (MOFs). Compared with the classical differential method, this new differential method takes into account the truncation of Fourier series and the discontinuities of the fields across the diffracting surface with the help of new factorization rules. The main advantage of this method is that the directrix of the diffracting cylindrical surface is arbitrary and permits anisotropic and inhomogeneous media although its numerical application needs longer computation time, compared with other well-known numerical methods. The S-propagation algorithm is used to avoid numerical contaminations. The numerical results are validated and compared with the well-established Multipole method in the case of a MOF with six circular cylinders. Further, a new cross-sectional profile (with sectorial inclusions) that the Multipole method cannot consider is studied.     

Free energy of the spherical mean field model

We compute at any temperature the free energy of the multi p-spin spherical model when only terms for p even are considered. Work partially supported by an NSF grant     

Blocage par injection de modes sous- harmoniques d’un oscillateur utilisant une ligne à retard à ondes de surface

A nonlinear regeneration pulsed oscillator driven by a monochromatic source has been built. Subharmonics of the resonance carrier/modulation are measured with an accuracy of 10^-10 thanks to the use of a double beats measurement set-up. The multiscale analysis of frequency readings reveals a rich fine structure which is in agreement with the nonlinear topological approach of synchronized states.     

Elimination of dislocations in heteroepitaxial MBE and RTCVD Ge x Si1-x grown on patterned Si substrates

We have grown Ge _x Si_1-x (0 <x < 0.20,1000–3000Å thick) on small growth areas etched in the Si substrate. Layers were grown using both molecular beam epitaxy (MBE) at 550° C and rapid thermal chemical vapor deposition (RTCVD) at 900° C. Electron beam induced current images (EBIC) (as well as defect etches and transmission electron microscopy) show that 2800Å-thick, MBE Ge_0.19Si_0.81 on 70-μm-wide mesas have zerothreading and nearly zero misfit dislocations. The Ge_0.19Si{0.81} grown on unpatterned, large areas is heavily dislocated. It is also evident from the images that heterogeneous nucleation of misfit dislocations is dominant in this composition range. 1000Å-thick, RTCVD Ge_0.14Si_0.86 films deposited on 70 μm-wide mesas are also nearly dislocation-free as shown by EBIC, whereas unpatterned areas are more heavily dislocated. Thus, despite the high growth temperatures, only heterogeneous nucleation of misfit dislocations occurs and patterning is still effective. Photoluminescence spectra from arrays of GeSi on Si mesas show that even when the interface dislocation density on the mesas is high, growth on small areas results in a lower dislocation density than growth on large areas.     

Study of the reactione + e −→K + K − in the energy range1350 \leqq \sqrt s \leqq 2400 MeV

Thee ⁺ e ^?→K ⁺ K ^? cross section has been measured from about 750 events in the energy interval \(1350 \leqq \sqrt s \leqq 2400 MeV\) with the DM2 detector at DCI. TheK ^± form factor |F _F ^±| cannot be explained by the ρ, ω, ? and ρ′(1600). An additional resonant amplitude at 1650 MeV has to be added as suggested by a previous experiment.     

Group additive values for the gas phase standard enthalpy of formation of hydrocarbons and hydrocarbon radicals

A complete and consistent set of 95 Benson group additive values (GAV) for the standard enthalpy of formation of hydrocarbons and hydrocarbon radicals at 298 K and 1 bar is derived from an extensive and accurate database of 233 ab initio standard enthalpies of formation, calculated at the CBS-QB3 level of theory. The accuracy of the database was further improved by adding newly determined bond additive corrections (BAC) to the CBS-QB3 enthalpies. The mean absolute deviation (MAD) for a training set of 51 hydrocarbons is better than 2 kJ mol(-1). GAVs for 16 hydrocarbon groups, i.e., C(C(d))(3)(C), C-(C(d))(4), C-(C(t))(C(d))(C)(2), C-(C(t))(C(d))(2)(C), C-(C(t))(C(d))(3), C-(C(t))(2)(C)(2), C-(C(t))(2)(C(d))(C), C-(C(t))(2)(C(d))(2), C-(C(t))(3)(C), C-(C(t))(3)(C(d)), C-(C(t))(4), C-(C(b))(C(d))(C)(H), C-(C(b))(C(t))(H)(2), C-(C(b))(C(t))(C)(H), C-(C(b))(C(t))(C)(2), C(d)-(C(b))(C(t)), for 25 hydrocarbon radical groups, and several ring strain corrections (RSC) are determined for the first time. The new parameters significantly extend the applicability of Benson's group additivity method. The extensive database allowed an evaluation of previously proposed methods to account for non-next-nearest neighbor interactions (NNI). Here, a novel consistent scheme is proposed to account for NNIs in radicals. In addition, hydrogen bond increments (HBI) are determined for the calculation of radical standard enthalpies of formation. In particular for resonance stabilized radicals, the HBI method provides an improvement over Benson's group additivity method.