The effects of plasma etching induced gate oxide degradation onMOSFET's 1/f noise

The effects of the plasma etching process induced gate oxide damages on device's low frequency noise behavior are investigated on MOSFET's fabricated with different field plate perimeter to gate area ratio antennas. Abnormal 1/f noise spectrum with a shoulder centered in the frequency range of 100 and to 1 kHz was frequently observed in small geometry devices, and it is attributable to a nonuniform distribution of oxide traps induced by plasma etching process     

Temperature dependence study of two-dimensional electron gas effecton the noise performance of high frequency field effect transistors

We present experimental evidence that the noise figure (NF) and associated gain equal to those achieved with GaAs pseudomorphic high electron mobility transistors (GaAs p-HEMT's) can also be accomplished by ion implanted GaAs metal-semiconductor field-effect transistors (GaAs MESFET's). These measured noise figure results as a function of low temperature for GaAs MESFET's and p-HEMT's clearly suggest that the transport properties of the two-dimensional electron gas in HEMT's and p-HEMT's do not make a significant contribution to the noise reduction at high frequency operation of these devices     

Layout-synthesis techniques for yield enhancement

Several yield-enhancement techniques are proposed for the last two stages of VLSI design, i.e., topological/symbolic and physical layout synthesis. Our approach is based on modifications of the symbolic/physical layout to reduce the sensitivity of the design to random point defects without increasing the area, rather than fault tolerance techniques. A layout compaction algorithm is presented and the yield improvement results of some industrial layout examples are shown. This algorithm has been implemented in a commercial CAD framework. Some routing techniques for wire length and via minimization are presented, and the results of wire length reduction in benchmark routing examples are shown. We demonstrate through topological optimization for PLA-based designs that yield enhancement can be applied even at a higher level of design abstraction. Experimental results show that it is possible to achieve significant yield improvements without increasing the layout area by applying the proposed techniques during layout synthesis     

Theory for passive mode-locking in semiconductor laser structuresincluding the effects of self-phase modulation, dispersion, and pulsecollisions

We present a theory for passive mode-locking in semiconductor laser structures using a semiconductor laser amplifier and absorber. The mode-locking system is described in terms of the different elements in the semiconductor laser structure. We derive mode-locking conditions and show how other mode-locking parameters, like pulse width and pulse energy, are determined by the mode-locking system. System parameters, like bandwidth, dispersion, and self-phase modulation are shown to play an important role in mode-locking conditions and results. We also discuss the effects of pulse collisions and positions of the mode-locking elements inside the cavity on mode-locking stability and show that these effects can be easily included in the presented model. Finally, we give a number of design rules and recommendations for fabricating passively mode-locked lasers     

Effect of ion energy on hydrogen diffusion in n- and p-GaAs

The ion energy during electron cyclotron resonance (ECR) plasma hydrogenation is found to have a strong effect on both the effective diffusivity and solubility of hydrogen in n⁺ and p⁺ GaAs. For fixed plasma exposure conditions (30 min, 250°C) the diffusion depths for -150 V acceleration voltage are ~50 and ~100% larger, respectively, in p⁺- and n⁺-GaAs compared to 0 V acceleration voltage. The smaller incorporation depths at lower ion energy coincide with much larger peak hydrogen concentrations and higher apparent thermal stability of passivated dopants     

Low-threshold, highly reliable 630 nm-band AlGaIP visible laserdiodes with AlInP buried waveguide

Low-threshold, highly reliable 630 nm-band AlGaInP visible laser diodes have been developed by employing a low-loss optical waveguide buried in the AlInP layer. A low-threshold current of 19 mA at 25°C is obtained with a cavity length of 310 μm. This current is the lowest value for 630 nm-band AlGaInP visible laser diodes, to our knowledge. Our AlInP-buried laser diodes with a cavity length of 500 μm operated over 7000 h without significant degradation at 60°C and 5 mW     

InSb,GaSb, and GaInSb grown using trisdimethylaminoantimony

GalnSb alloys as well as the constituent binaries InSb and GaSb have been grown by organometallic vapor phase epitaxy using the new antimony precursor trisdimethylaminoantimony (TDMASb) combined with conventional group III precursors trimethylindium (TMIn) and trimethylgallium (TMGa). InSb layers were grown at temperatures between 275 and 425°C. The low values of V/III ratio required to obtain good morphologies at the lowest temperatures indicate that the pyrolysis temperature is low for TDMASb. In fact, at the lowest temperatures, the InSb growth efficiency is higher than for other antimony precursors, indicating the TDMASb pyrolysis products assist with TMIn pyrolysis. A similar, but less pronounced trend is observed for GaSb growth at temperatures of less than 500°C. No excess carbon contamination is observed for either the InSb or GaSb layers. Ga_1-xIn_xSb layers with excellent morphologies with values of x between 0 and 0.5 were grown on GaSb substrates without the use of graded layers. The growth temperature was 525°C and the values of V/III ratio, optimized for each value of x, ranged between 1.25 and 1.38. Strong photoluminescence (PL) was observed for values of x of less than 0.3, with values of halfwidth ranging from 13 to 16 meV, somewhat smaller than previous reports for layers grown using conventional precursors without the use of graded layers at the interface. The PL intensity was observed to decrease significantly for higher values of x. The PL peak energies were found to track the band gap energy; thus, the luminescence is due to band edge processes. The layers were all p-type with carrier concentrations of approximately 10¹⁷ cm³. Transmission electron diffraction studies indicate that the Ga_0.5In_0.5 Sb layers are ordered. Two variants of the Cu-Pt structure are observed with nearly the same diffracted intensities. This is the first report of ordering in GalnSb alloys.     

Invariants of chaotic Hamiltonian systems

The invariants of chaotic bounded Hamiltonian systems and their relation to the solutions of the first variational equations of the equations of motion are studied. We show that these invariants are characterized by the fact that they either lose the property of differentiability as functions on phase space or that a certain formal power series defined in terms of the derivatives of the invariants has zero radius of convergence. For a specific example, we show that the former possibility appears to apply.     

Visualization: the look of reality

The need to understand behavior, be it of objects, systems, or organisms, bred the need to simulate it visually, which has been in turn the prime catalyst in the use of computer graphics. A 1987 National Science Foundation report helped give the term “visualization” a place in the computing lexicon, and by now the field has generated a multibillion-dollar industry in software, hardware, and related equipment. Visualization is the process of making visible what is hard or impossible to see in the physical world. It therefore embraces the display of volumetric data and representations of fields and mathematical phenomena, plus distributed visual processing the use of animation (to add the dimensions of time and motion to a subject), and the mating of visualization capabilities with software for such tasks as finite-element analysis. The author discusses visualization and its benefits and applications     

Broadband TDMA over the indoor radio channel

Prior work has focused on the negative aspects of time-dispersive channels and associated intersymbol interference. The authors show that the inherent diversity introduced by such dispersion is advantageous in reducing the performance-limiting effects of flat fading. This is demonstrated for an indoor QPSK radio link employing a decision-feedback equaliser