Einstein algebras and general relativity

A purely algebraic structure called an Einstein algebra is defined in such a way that every spacetime satisfying Einstein's equations is an Einstein algebra but not vice versa. The Gelfand representation of Einstein algebras is defined, and two of its subrepresentations are discussed. One of them is equivalent to the global formulation of the standard theory of general relativity; the other one leads to a more general theory of gravitation which, in particular, includes so-called regular singularities. In order to include other types of singularities one must change to sheaves of Einstein algebras. They are defined and briefly discussed. As a test of the proposed method, the sheaf of Einstein algebras corresponding to the spacetime of a straight cosmic string with quasiregular singularity is constructed.     

Properties of polystyrene-poly(methylmethacrylate) random and diblock copolymers in dilute and semidilute solutions

Solution properties for random and diblock copolymers of polystyrene (PS) and poly(methyl methacrylate) (PMMA) have been measured by dynamic and total intensity light scattering in solvents of differing quality. The results are compared with the corresponding properties for PS and PMMA homopolymers of similar molecular weight, in order to determine if interactions between unlike monomers are significant. The hydrodynamic radius (R_h) and diffusion second virial coefficient (k_d) for the random copolymer are found to be larger than the corresponding values for the homopolymers in a solvent which is near-theta for the two homopolymers, whereas no such effect is observed for the block copolymer. This suggests that most intrachain interactions occur a relatively short distance along the chain backbone. In a mutual good solvent R_h and k_d of the random copolymer are comparable to the average of the values for the homopolymers, indicating that in a good solvent monomer/solvent interactions dominate over monomer/monomer interactions. For an isolated diblock copolymer in a mutual good solvent, there is no evidence that interactions between unlike monomers lead to additional expansion of the entire molecule, as measured by R_h, nor expansion of the individual blocks as probed by light scattering with one block optically masked. However, at low but finite concentration there is evidence (the coefficients of the binary interaction terms in the viscosity and the mutual diffusion coefficient, and the second and third virial coefficients) that a weak ordering effect may exist in block copolymer solutions, far from the conditions where microphase separation occurs. Finally, measurements of ternary polymer-polymer-solvent solutions show no dependence on monomer composition or monomer distribution for the tracer diffusion of probe PS-PMMA copolymers in a PMMA/toluene matrix. This indicate that the frictional interaction is largely unaffected by interactions between unlike monomers. However, there is evidence that the thermodynamic interaction is more unfavorable between a random copolymer and the homopolymer matrix than between a diblock and the matrix. © 1994 John Wiley & Sons, Inc.     

Neighborhood unions and the cycle cover number of a graph

For several years, the study of neighborhood unions of graphs has given rise to important structural consequences of graphs. In particular, neighborhood conditions that give rise to hamiltonian cycles have been considered in depth. In this paper we generalize these approaches to give a bound on the smallest number of cycles in G containing all the vertices of G. We show that if for all x, y ? V(G), |N(x) ∩ N(y)| ≧ 2n/5 + 1, then V(G) is coverable by at most two cycles. Several related results and extensions to t cycles are also given.     

Statistical modeling of device mismatch for analog MOS integratedcircuits

A generalized parameter-level statistical model, called statistical MOS (SMOS), capable of generating statistically significant model decks from intra- and inter-die parameter statistics is described. Calculated model decks preserve the inherent correlations between model parameters while accounting for the dependence of parameter variance on device separation distance and device area. Using a Monte Carlo approach to parameter sampling, circuit output means and standard deviations can be simulated. Incorporated in a CAD environment, these modeling algorithms will provide the analog circuit designer with a method to determine the effect of both circuit layout and device sizing on circuit output variance. Test chips have been fabricated from two different fabrication processes to extract statistical information required by the model. Experimental and simulation results for two analog subcircuits are compared to verify the statistical modeling algorithms     

Structure and reorientation kinetics of hydrogen passivated shallow impurities in silicon from vibrational spectroscopy

A survey is presented of what has been learned from vibrational spectroscopy and theory about the structure and reorientation kinetics of hydrogen-passivated shallow impurities in Si.