Hybrid switching and p-routing for optical burst switching networks

One promising switching technology for wavelength-division multiplexing optical networks is optical burst switching (OBS). However, there are major deficiencies of OBS. (1) The delay offset between a control message and its corresponding data burst is based on the diameter of a network. This affects network efficiency, quality-of-service, and network scalability.( 2) OBS adopts one-way resource reservation scheme, which causes frequent burst collision and, thus, burst loss. We address the above two important issues in OBS. In particular, we study how to improve the performance of delay and loss in OBS. To reduce the end-to-end delay, we propose a hybrid switching scheme. The hybrid switching is a combination of lightpath switching and OBS switching. A virtual topology design algorithm based on simulated annealing to minimize the longest shortest path through the virtual topology is presented. To minimize burst collision and loss, we propose a new routing algorithm, namely, p-routing, for OBS network. The p-routing is based on the wavelength available probability. A path that has higher available probability is less likely to drop bursts due to collision. The probability-based p-routing can reduce the volatility, randomness, and uncertainty of one-way resource reservation. Our studies show that hybrid switching and p-routing are complementary and both can dramatically improve the performance of OBS networks.     

一个面积和功耗优化且适用于10/100 Base-T以太网的CMOS时钟恢复电路

提出了一个新的用于10 / 10 0 Base- T以太网中面积和功耗优化的时钟恢复电路.它采用双环路的结构,加快了锁相环路的捕获和跟踪速度;采用复用的方式,通过选择信号控制电路可分别在10 Mbps或10 0 Mbps模式下独立工作且能方便地实现模式间的互换,与采用两个独立的CDR电路相比节省了一半的面积;同时,电路中采用一般的延迟单元来取代DL L,并能保证环路性能不随工艺温度等条件引起的延迟单元、延迟时间的变化而变化,从而节省了功耗.Hspice模拟结果显示,在Vdd=2 .5 V时,10 0 Mbps模式下电路的功耗约为75 m W,稳态相差为0 .3 ns;10 Mbps模式时电路功耗为5 8m W     

Reliability of Au bump––Cu direct interconnections fabricated by means of surface activated bonding method

As a room temperature bonding method, surface activated bonding (SAB) method has been introduced to be one of the most appropriate interconnection methods for the next generation of electronic packaging. Thus it is important to study the reliability of SAB interconnection in long term life test.In this paper, interconnections of Au bump and Cu film bonded by SAB method were performed in high temperature thermal aging test. Degradation of properties such as electrical resistance, shear strength of bump and interface microstructure during aging process were studied to investigate the failure mechanism of the interconnection. Intermetallic compound Cu₃Au was found formed at the interface during thermal aging, and it causes evolvement of the properties and failure mode of the interconnection changing in shear test. Results reveal that SAB is suitable for the interconnection between Au bump and Cu film and it is reliable in thermal reliability test.     

A highly efficient polarized superfluorescent fiber source for fiber-optic gyroscope applications

We demonstrate a novel polarized superfluorescent fiber source (SFS) that increases the output power in the desired polarization by a factor of 1.96 over that of an unpolarized SFS at the same pump. This is achieved by inserting a polarizer at the optimal point in the bidirectionally pumped erbium-doped fiber of an unpolarized SFS. Stable pump-power-dependent mean wavelength operation and less sensitivity to the insertion loss, important for fiber-optic gyroscope applications, are obtained in this configuration.     

具有复合埋层的新型SIMON材料的制备

采用氮氧共注入方法制备了新型的 SIMON(separation by implanted oxygen and nitrogen) SOI材料 .采用不同的制备方法分别制作出样品并进行了结构测试和分析 ,发现 SIMON材料的结构和质量对注入条件和退火工艺非常敏感 .并对各种氮氧复合注入技术做了分析和比较 ,发现氮氧分次注入可以得到更好的结构和性能     

1.8V电源电压81dB动态范围的低过采样率ΣΔ调制器

采用2 2 2级联全差分结构和低电压、高线性度的电路设计实现了高动态范围、低过采样率的ΣΔ调制器.在1.8V工作电压,4 MHz采样频率以及80 k Hz输入信号的条件下,该调制器能够达到81d B的动态范围,功耗仅为5 m W.结果表明此结构及电路设计可以用于在低电压工作环境的高精度模数转换中     

Phase Transition VO2 Thin Films for Optical Switches

This paper presents a method to make vanadium dioxide (VO₂) crystallites on silicon substrates by reactive ion beam sputtering. The thickness of the thin film is about 100nm. The phase transition temperature of VO₂ is 65°C. The transmittance of the semiconducting phase VO₂ is about 50% and it is reduced to as low as 3% in metal phase at the infrared wavelenghth spectrum. The extinction ratio of the optical switches is 12dB. and the insertion loss is of 1-2dB. The switching time is about 1ms.     

拟线性抛物型方程广义解的局部有界性

本文给出了一类较广泛的拟线性抛物型方程广义解的局部有界性,进而也得到了解的Holder连续性.     

动态模糊随机信息处理的数学方法

本文系统地概述了我们近年来提出的动态模糊随机信息处理的数学方法,内容包括模糊随机变量、模糊随机过程和模糊随机微分方程的基本解法等方面的基本概念、基本定义和某些重要的定理,以及动态系统的模糊随机响应与可靠性分析的方法等。这些方法是为我们研究工程实际问题的需要逐步发展起来的,对于处理某些类型的问题简便实用。     

北京自由电子激光最近进展──实现饱和振荡

北京自由电子激光(BFEL)装置于1993年底在10.68μm处实现了饱和振荡.输出激光能量为3mJ,饱和平顶宽度2μs.对应饱和振荡平均功率为210kW(宏脉冲),峰值功率约为20MW,比自发辐射高8个量级,单程小讯号净增益为24%,转换效率为0.45%,与理论预期结果相符.光束质量接近衍射极限.目前装置可工作于9-11μm.