Safety issues of Li-ion batteries imposed by unfavorable thermal behavior accentuate the need for efficient thermal management systems to prevent the runaway conditions. To that end, a hybrid thermal management system is designed and further investigated numerically and experimentally in the present study. The passive cooling system is fabricated by saturating copper foam with paraffin as the phase change material (PCM) and integrated with an active cooling system with alumina nanofluid as the coolant fluid. Results for various Reynolds numbers and different heating powers indicate that the hybrid nanofluid cooling system can successfully fulfill safe operation of the battery during stressful operating conditions. The maximum time in which all PCM field is changed to the liquid phase is defined as the onset of the stressful conditions. Therefore, the start time of stressful conditions at 41 W and Re 420 is increased from 3700 s with nanofluid composed of 1% volume fraction nanoparticles (VF-1%) to 4600 s with nanofluid VF-2% during high current discharge rates. Nanofluid cooling extends the operating time of the battery in comparison with the water-based cooling system with 200-s (nanofluid with volume fraction of 1%) and 900-s (nanofluid with volume fraction of 2%) increases in operating time at Reynolds of 420. Using nanofluid, instead of water, postpones the onset of paraffin phase transition effectively and prolongs its melting time which consequently leads to a decrease in the rate of temperature rise.
Both rapid precipitation and diffusion controlled gel growth were applied to crystallize calcium carbonate at temperatures in the range of 100 °C to 270 °C. The amount of aragonite was determined by means of X-ray diffraction data. The morphology of the aragonite crystals are described. Metastable formation of aragonite was observed only at temperatures below 270 °C. 相似文献
One of the challenges in massive-MIMO system is pilot contamination during the channel estimation process. Pilot contamination can cause error or inaccurate channel estimation process for future fifth generation (5G) downlink transmissions. This paper considers using a Wiener-based filter to smooth and predict the channel estimation to reduce the pilot contamination for more accurate CSI during channel estimation. The simulation results show that the Wiener-based smoothing and predicting technique reduces the effect of pilot contamination and increases the accuracy of CSI during channel estimation process. Wiener smoother (WS) is implemented based on Wiener-based filtering technique. The previous estimated CSI and weight coefficient vector are used to smooth the current estimated CSI by using block data formulation to reduce the effect of pilot contamination. However, WS technique suffers from pilot contamination due to pilot training. This motivates the development of two Wiener predictors (WP), known as WP1 and WP2. The WP1 and WP2 run a prediction technique for CSI and number of pilot training during the prediction period, which is missing from the original WS. Comparison results show that the proposed WS and WP outperforms the conventional minimum mean square error and least square, in terms of channel estimation error and per-cell rate. WP2 perform better than WS and WP1 because of the algorithm complexity that required more information to be updated, stored and processed for prediction. Thus, WP2 requires large computation and matrix operation compared to WS and WP1. The results indicate that the channel estimation error due to pilot contamination can be reduced by using the Wiener-based approaches. 相似文献
A monolithic integrated low-noise amplifier for operation in the 5.8-GHzband is described. Two different versions have been implemented where the biasing wasadapted to allow operation over a different range of supply voltage. At 5-V, theamplifiers gain is about 17-dB, with a noise figure of 4.2-dB and 1-dB compressionpoint at –15-dBm input power. The circuits have been designed utilizing a0.6-micron silicon bipolar production technology, featuring npn transistors with
and
of about20-GHz. 相似文献
Though the effect of fringing field in electrostatic parallel-plate actuators is a well-understood phenomenon, the existing
formulations often result in complicated mathematical models from which it is difficult to determine the deflection of the
moving plate for given voltages and hence, they are not suitable for accurate actuation control. This work presents a new
formulation for tackling the fringing field, in which the effect of fringing field is modeled as a variable serial capacitor.
Based on this model, a robust control scheme is constructed using the theory of input-to-state stabilization (ISS) and backstepping
state feedback design. This method allows loosening the stringent requirements on modeling accuracy without compromising the
performance. The stability and the performance of the system using this control scheme are demonstrated through both stability
analysis and numerical simulation. 相似文献
Acetylcholinesterase was immobilized by means of physical adsorption. The aim of this work is to describe the kinetic characterization
of the immobilized acetylcholinesterase. Here we report the effects of immobilization, carbaryl and its solvent dioxane on
the kinetic properties of acetylcholinesterase. The immobilized product has significant storage stability. Dioxane could decrease
the acetylcholinesterase activity and increase the inhibitory effect of carbaryl. Immobilization could change acetylcholinesterase
activity cooperatively. The inhibitory mechanism is hyperbolic noncompetitive. Carbaryl and dioxane could eliminate the substrate
inhibition by a competitive mechanism and by changing the native conformation of acetylcholinesterase. 相似文献
The various dissociation thresholds of phenol(+)···Ar(3) complexes for the consecutive loss of all three Ar ligands were measured in a molecular beam using resonant photoionization efficiency and mass analyzed threshold ionization spectroscopy via excitation of the first excited singlet state (S(1)). The adiabatic ionization energy is derived as 68077 ± 15 cm(-1). The analysis of the dissociation thresholds demonstrate that all three Ar ligands in the neutral phenol···Ar(3) tetramer are attached to the aromatic ring via π-bonding, denoted phenol···Ar(3)(3π). The value of the dissociation threshold for the loss of one Ar ligand from phenol(+)···Ar(3)(3π), ~190 cm(-1), is significantly lower than the binding energy measured for the π-bonded Ar ligand in the phenol(+)···Ar(π) dimer, D(0) = 535 ± 3 cm(-1). This difference is rationalized by an ionization-induced π → H isomerization process occurring prior to dissociation, that is, one Ar atom in phenol(+)···Ar(3)(3π) moves to the OH binding site, leading to a structure with one H-bonded and 2 π-bonded ligands, denoted phenol(+)···Ar(3)(H/2π). The dissociation thresholds for the loss of two and three Ar atoms are also reported as 860 and 1730 cm(-1). From these values, the binding energy of the H-bound Ar atom can be estimated as 870 cm(-1). 相似文献
The catalytic performance of Al-MCM-41 containing 5?5 wt% H3PO4 was studied for the vapor phase alkylation of phenol with tert-butyl alcohol (TBA) from 383 to 493 K. 4-Tert-butyl phenol was produced as the main product with moderate selectivity. The product distribution depends on the reaction temperature, number of acid sites, and the Br鰊sted to Lewis sites ratios. A lower molar ratio of reactants (TBA/phenol = 2) and a higher space velocity facilitated the production of 4-tert-butyl phenol. The influence of various parameters such as temperature, reactant feed molar ratio, feed rate, and time on stream were investigated for conversion yield and product selectivity. 相似文献
This paper reports on a process to fabricate single-crystal 3C-SiC on SiO2 structures using a wafer bonding technique. The process uses the bonding of two polished polysilicon surfaces as a means
to transfer a heteroepitaxial 3C-SiC film grown on a Si wafer to a thermally oxidized Si wafer. Transfer yields of up to 80%
for 4 inch diameter 3C-SiC films have been achieved. Homoepitaxial 3C-SiC films grown on the 3C-SiC on SiO2 structures have a much lower defect density than conventional 3C-SiC on Si films. 相似文献