AlGaN-based quantum-well heterostructures for deep ultraviolet light-emitting diodes grown by submonolayer discrete plasma-assisted molecular-beam epitaxy

Features of plasma-assisted molecular-beam epitaxy of AlGaN compounds at relatively low temperatures of the substrate (no higher than 740°C) and various stoichiometric conditions for growth of the nitrogen- and metal-enriched layers are studied. Discrete submonolayer epitaxy for formation of quantum wells and n-type blocking layers without varying the fluxes of components was used for the first time in the case of molecular- beam epitaxy with plasma activation of nitrogen for the nanostructures with the Al _x Ga_{1 ? x} N/Al _y Ga_{1 ? y} N quantum wells. Structural and optical properties of the Al _x Ga_{1 ? x} N layers in the entire range of compositions (x = 0–1) and nanostructures based on these layers are studied; these studies indicate that there is photoluminescence at room temperature with minimum wavelength of 230 nm. Based on the analysis of the photoluminescence spectra for bulk layers and nanoheterostructures and their temperature dependences, it is concluded that there are localized states in quantum wells. Using the metal-enriched layers grown on the c-Al₂O₃ substrates, heterostructures for light-emitting diodes with Al _x Ga_{1 ? x} N/Al _y Ga_{1 ? y} N quantum wells (x = 0.4–0.5, y = x + 0.15) were obtained and demonstrated electroluminescence in the ultraviolet region of the spectrum at the wavelength of 320 nm.     

Optical properties of doped bismuth telluride crystals in the region of plasma effects

The optical properties of bismuth telluride crystals doped with donor-and acceptor-type impurities are studied. The fact that energy corresponding to the resonance frequency of plasma oscillations of free charge carriers (plasmons) approaches the band-gap energy is detected in the infrared spectral region, where the main elementary excitations in the electronic system of these materials are observed. The mentioned approach of energies varies the intensity of electron-plasmon interaction, which affects the recombination processes in the materials widely used for the fabrication of thermoelectric energy converters.     

An efficient electron-beam-pumped semiconductor laser for the green spectral range based on II–VI multilayer nanostructures

Emission characteristics of an electron-beam-pumped Cd(Zn)Se/ZnMgSSe semiconductor laser are studied. The laser’s active region consists of a set of ten equidistant ZnSe quantum wells containing fractional-monolayer CdSe quantum-dot inserts and a waveguide formed by a short-period superlattice with the net thickness of ～0.65 μm. Lasing occurs at room temperature at a wavelength of 542 nm. Pulsed power as high as 12 W per cavity face and an unprecedentedly high efficiency of ～8.5% are attained for the electron-beam energy of 23 keV.     

A Low-Power Reconfigurable Logic Array Based on Double-Gate Transistors

A fine-grained reconfigurable architecture based on double gate technology is proposed and analyzed. The logic function operating on the first gate of a double-gate (DG) transistor is reconfigured by altering the charge on its second gate. Each cell in the array can act as logic or interconnect, or both, contrasting with current field-programmable gate array structures in which logic and interconnect are built and configured separately. Simulation results are presented for a fully depleted SOI DG-MOSFET implementation and contrasted with two other proposals from the literature based on directed self-assembly.     

Lein?l, Lein?lfirniss und Oelfarben

Ohne Zusammenfassung     

Volumetric and infrared measurements on amorphous ice structure

We have simultaneously used adsorption isotherm volumetry and Fourier transform infrared spectroscopy in order to take the investigations on amorphous ice structure a step further, especially concerning porosity and annealing-induced modifications. We have studied surface reorganization during annealing and found that the number of surface sites decreases before crystallization, their relative ratios being different for amorphous and crystalline ice. We also present results confirming that ice can have a large specific surface area and nevertheless be non-microporous.     

单光子态的产生与测量

报道了通过自发参量下转换产生单光子态的实验研究,使用中心波长425 nm的飞秒脉冲泵浦Ⅰ类非共线相位匹配的BBO晶体,在实验上得到单光子计数率为2.978×10-4,并分析了实验中的相关问题.     

Synthesis and Characterization of Silica@Copper Core–Shell Nanoparticles: Application for Conjugate Addition Reactions

Silica@copper (SiO₂@Cu) core–shell nanoparticles were synthesized and well characterized by XRD, TEM, AFM, XPS, UV/Vis, TGA–MS, and ICP–AES techniques. The synthesized SiO₂@Cu core–shell nanoparticles were employed as catalysts for the conjugate addition of amines to α,β‐unsaturated compounds in water to obtain β‐amino carbonyl compounds in excellent yields in shorter reaction times. Furthermore, the catalyst works well for hetero‐Michael addition reactions of heteroatom nucleophiles such as thiols to α,β‐unsaturated compounds. As the reaction is performed in water, it allows for easy recycling of the catalyst with consistent activity.     

Study of the dissolution and growth of salt single crystals in inhomogeneous acoustic fields: I. A standing acoustic wave

The growth of the isolated (100) face of a KDP crystal at exposure of the phase boundary to the initial ultrasound field and a standing acoustic wave has been investigated. A significant growth response of this face, exposed to sound normally along the acoustic axis in the near zone of a piston-like half-wave vibrator with f = 20 kHz and tangentially in the pulsed two-frequency (f = 600 and 900 kHz) standing-wave mode, has been revealed. It is shown that the mechanisms of mass exchange enhancement in these acoustic modes are different. The results obtained show a fundamental possibility of controlling crystal growth and dissolution by varying the parameters of inhomogeneous acoustic field.