首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   245篇
  免费   5篇
  国内免费   1篇
化学   124篇
晶体学   3篇
数学   60篇
物理学   9篇
无线电   55篇
  2023年   1篇
  2022年   2篇
  2021年   6篇
  2020年   4篇
  2019年   5篇
  2018年   9篇
  2017年   3篇
  2016年   8篇
  2015年   5篇
  2014年   11篇
  2013年   25篇
  2012年   17篇
  2011年   10篇
  2010年   9篇
  2009年   16篇
  2008年   8篇
  2007年   21篇
  2006年   12篇
  2005年   9篇
  2004年   4篇
  2003年   2篇
  2002年   9篇
  2000年   2篇
  1999年   4篇
  1998年   1篇
  1997年   4篇
  1996年   1篇
  1995年   2篇
  1994年   3篇
  1992年   2篇
  1989年   2篇
  1988年   1篇
  1987年   2篇
  1986年   1篇
  1985年   1篇
  1984年   2篇
  1983年   5篇
  1982年   1篇
  1981年   7篇
  1980年   4篇
  1979年   8篇
  1976年   2篇
排序方式: 共有251条查询结果,搜索用时 0 毫秒
171.
The electrochemical characteristics of an Nd2NiO4 cathode, synthesized using the citric acid-nitrate combustion method and symmetrically deposited by spin coating on both surfaces of an La9.33Si5.3Al0.7O25.65 (LSAO) electrolyte, were studied using AC impedance spectroscopy. It was found that, varying the temperature (600 to 850 °C) and the oxygen partial pressure (0.2–10?7 atm), the impedance characteristics of the electrode could be determined by three different processes. Said processes were ionic conduction in the electrode bulk, interfacial charge transfer, and gas-phase diffusion, all of which are based on the temperature and oxygen partial pressure dependence on the polarization resistance, which is associated with each individual processes as well as on the corresponding capacitance values.  相似文献   
172.
Two neutral salicylaldiminato methyl pyridine nickel(II) complexes were synthesized and evaluated for ethylene polymerization. Each catalyst bears a methoxy group in the 3‐position and a halogen atom in the 5‐position of the salicyl ligand, chlorine in case of catalyst 3a and bromine in 3b . Molecular structures of the catalysts were obtained by X‐ray crystallography. The resulting polymerization activities, for example, indicated by a maximum turnover frequency of 4,870 mol ethylene/(mol Ni × h) for 1‐h runs obtained with 3a , were higher than those of similar catalysts at comparable conditions reported in the literature. Catalyst 3a was slightly more active than catalyst 3b . The polymers are branched as measured by 1H NMR and 13C NMR. This was also reflected in the melting temperatures between 76 and 113 °C obtained by differential scanning calorimetry. By using gel permeation chromatography measurements, it was determined that the Mw of the polymers ranges between about 5,400 and 21,600 g/mol. In particular, the effect of the polymerization temperature on the catalyst activity, degree of branching, and molecular weight properties has been described. © 2011 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2012  相似文献   
173.
Conditions are determined under which the minimum and/or characteristic polynomials of a matrix have simple zeros.  相似文献   
174.
175.
176.
An nxn matrix A is hypernormal if APA*=A*PA for all permutation matrices P. We shall explain how to construct hypernormal matrices.  相似文献   
177.
Low-thermal-budget annealing of ion-implanted BF 2 + , P, and As in Si was studied for shallow-junction formation. Implant doses were sufficient to amorphize the silicon surface region. Low-temperature furnace annealing and rapid-thermal annealing of ionimplanted boron, phosphorus and arsenic in silicon exhibit a transient enhanced diffusion regime resulting injunction depths considerably deeper than expected. The origin of this transient enhanced diffusion is the annealing of ion-implantation damage in the silicon substrate. We have found that point-defect generation during the annealing of either shallow end-of-range damage or small clusters of point defects dominates the transient enhanced diffusion process depending upon the annealing temperature and time. The net effect of damage annealing is to reduce the activation energy for dopant diffusion by an amount equal to the activation energy of the supersaturation of point defects in silicon. Models which can describe the transient enhancement characteristics in dopant diffusion during both furnace and rapid-thermal annealing of these implants are discussed.  相似文献   
178.
We generalize the concept of Hecke pairs and study representations of the corresponding C*-algebra. We introduce the notions of covariant pairs and matrix unit pairs of representations in this general setting and show that covariant pairs are exactly faithful matrix unit pairs.  相似文献   
179.
A novel concept for improvement of phase noise in differential LC-VCOs is proposed. Being based on quality factor (Q) enhancement through conversion of the lossy inductor to a virtual inductor conditionally approaching the ideal lossless limit, the basics of the concept are illustrated and explained. Practical realization of the concept is discussed, and its application in design of a CMOS based Giga Hertz range low phase noise monolithic differential LC-VCO is investigated. Advanced Design System (ADS) simulations using CMOS 0.18 μm TSMC RF design kit are used for evaluation.  相似文献   
180.
The present article is part III of a series devoted to extending the Repeat Space Theory (RST) to apply to carbon nanotubes and related molecular networks. In this part III, four problems concerning the above-mentioned extension of the RST have been formulated. Affirmative solutions of these problems imply (i) asymptotic analysis of carbon nanotubes (CNTs) via the new techniques of normed repeat space, Banach algebra, and C*-algebra becomes possible; (ii) a new linkage is formed between the investigations of CNTs and those of ‘spectral symmetry’. In the present paper, we give affirmative solutions to all of the four problems, together with (a) estimates of the norms of matrix sequences representing CNTs, (b) Challenging Problem A#, which complements Problems A, (c) several pictures of ‘CNT Matrix Art’ which has heuristic power to lead one to get the affirmative answers to the problems formulated in an abstract algebraic manner.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号