Insertion of noble gas atoms into cyanoacetylene: an ab initio and matrix isolation study

A computational and experimental matrix isolation study of insertion of noble gas atoms into cyanoacetylene (HCCCN) is presented. Twelve novel noble gas insertion compounds are found to be kinetically stable at the MP2 level of theory, including four molecules with argon. The first group of the computationally studied molecules belongs to noble gas hydrides (HNgCCCN and HNgCCNC), and we found their stability for Ng = Ar, Kr, and Xe. The HNgCCCN compounds with Kr and Xe have similar stability to that of previously reported HKrCN and HXeCN. The HArCCCN molecule seems to have a weaker H-Ar bond than in the previously identified HArF molecule. The HNgCCNC molecules are less stable than the HNgCCCN isomers for all noble gas atoms. The second group of the computational insertion compounds, HCCNgCN and HCCNgNC, are of a different type, and they also are kinetically stable for Ng = Ar, Kr, and Xe. Our photolysis and annealing experiments with low-temperature cyanoacetylene/Ng (Ng = Ar, Kr, and Xe) matrixes evidence the formation of two noble gas hydrides for Ng = Kr and Xe, with the strongest IR absorption bands at 1492.1 and 1624.5 cm(-1), and two additional absorption modes for each species are found. The computational spectra of HKrCCCN and HXeCCCN fit most closely the experimental data, which is the basis for our assignment. The obtained species absorb at quite similar frequencies as the known HKrCN and HXeCN molecules, which is in agreement with the theoretical predictions. No strong candidates for an Ar compound are observed in the IR absorption spectra. As an important side product of this work, the data obtained in long-term decay of KrHKr+ cations suggest a tentative assignment for the CCCN radical.     

Comparison between the electrical properties of atomic layer deposited thin ZrO2 films processed from cyclopentadienyl precursors

Electrical characterization of zirconium oxide (ZrO₂) based metal-oxide-semiconductor (MOS) structures has been carried out. ZrO₂ films have been atomic layer deposited (ALD) by using novel cyclopentadienyl-based precursors, which have recently revealed themselves as very adequate in terms of thermal stability and high permittivity of the dielectrics deposited. Our results demonstrate good quality of the films, especially when mixed alkylamido-cyclopentadienyl precursors are used on SiO₂/Si substrates. Conduction mechanisms in these MIS capacitors were studied, with moderately or highly-doped silicon used as substrate.     

On finite loops with nilpotent inner mapping groups

We shall show how the nilpotency class of a finite loop Q is determined by the properties of a nilpotent inner mapping group. We also show that a classical result by Baer on the structure of abelian finite capable groups holds for Moufang loops of odd order.     

Formation of HXeO in a xenon matrix: indirect evidence of production, trapping, and mobility of XeO (1(1)Sigma+) in solid Xe

IR spectroscopy, laser induced fluorescence (LIF), and thermoluminescence (TL) measurements have been combined to monitor trapping, thermal mobility, and reactions of oxygen atoms in solid xenon. HXeO and O(3) have been used as IR active species that probe the reactions of oxygen atoms. N(2)O and H(2)O have been used as precursors for oxygen atoms by photolysis at 193 nm. Upon annealing of matrices after photolysis, ozone forms at two different temperatures: at 18-24 K from close O ...O(2) pairs and at approximately 27 K due to global mobility of oxygen atoms. HXeO forms at approximately 30 K reliably at higher temperature than ozone. Both LIF and TL show activation of oxygen atoms around 30 K. Irradiation at 240 nm after the photolysis at 193 nm depletes the oxygen atom emission at 750 nm and reduces the amount of HXeO generated in subsequent annealing. Part of the 750 nm emission can be regenerated by 266 nm and this process increases the yield of HXeO in annealing as well. Thus, we connect oxygen atoms emitting at 750 nm with annealing-induced formation of HXeO radicals. Ab initio calculations at the CCSD(T)/cc-pV5Z level show that XeO (1(1)Sigma(+)) is much more deeply bound [D(e) = 1.62 eV for XeO --> Xe+O((1)D)] than previous calculations have predicted. Taking into account the interactions with the medium in an approximate way, it is estimated that XeO (1(1)Sigma(+)) has a similar energy in solid xenon as compared with interstitially trapped O((3)P) suggesting that both possibly coexist in a low temperature solid. Taking into account the computational results and the behavior of HXeO and O(3) in annealing and irradiations, it is suggested that HXeO may be formed from singlet oxygen atoms which are trapped in a solid as XeO (1(1)Sigma(+)).     

XPS and electroluminescence studies on SrS1−xSex and ZnS1−xSex thin films deposited by atomic layer deposition technique

SrS_1−xSe_x and ZnS_1−xSe_x thin films were deposited by the atomic layer deposition (ALD) technique using elemental selenium as the Se source, thus avoiding use of H₂Se or organometallic selenium compounds. X-ray diffraction (XRD) analysis showed that the films were solid solutions and X-ray photoelectron spectroscopy (XPS) data showed that the surface of both ZnS_1−xSe_x and SrS_1−xSe_x were covered with an oxide and carbon-containing contaminants from exposure to air. The oxidation of SrS_1−xSe_x extended into the film and peak shifts from sulfate were found on the surface. Luminance measurements showed that emission intensity of the ZnS_1−xSe_x:Mn alternating current thin film electroluminescent (ACTFEL) devices at fixed voltage was almost the same as that of the ZnS:Mn device, while emission intensity of the SrS_1−xSe_x:Ce devices decreased markedly as compared to the SrS:Ce device. Emission colors of the devices were altered only slightly due to selenium addition.     

Copolymerization of vinylcyclohexane with ethene and propene using zirconocene catalysts

Vinylcyclohexane (VCH) was copolymerized with ethene and propene using methylaluminoxane‐activated metallocene catalysts. The catalyst precursor for the ethene copolymerization was rac‐ethylenebis(indenyl)ZrCl₂ ( 1 ). Propene copolymerizations were further studied with C_s‐symmetric isopropylidene(cyclopentadienyl)(fluorenyl)ZrCl₂ ( 2 ), C₁‐symmetric ethylene(1‐indenyl‐2‐phenyl‐2‐fluorenyl)ZrCl₂ ( 3 ), and “meso”‐dimethylsilyl[3‐benzylindenyl)(2‐methylbenz[e]indenyl)]ZrCl₂ ( 4 ). Catalyst 1 produced a random ethene–VCH copolymer with very high activity and moderate VCH incorporation. The highest comonomer content in the copolymer was 3.5 mol %. Catalysts 1 and 4 produced poly(propene‐co‐vinylcyclohexane) with moderate to good activities [up to 4900 and 15,400 kg of polymer/(mol of catalyst × h) for 1 and 4 , respectively] under similar reaction conditions but with fairly low comonomer contents (up to 1.0 and 2.0% for 1 and 4 , respectively). Catalysts 2 and 3 , both bearing a fluorenyl moiety, gave propene–VCH copolymers with only negligible amounts of the comonomer. The homopolymerization of VCH was performed with 1 as a reference, and low‐molar‐mass isotactic polyvinylcyclohexane with a low activity was obtained. © 2006 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 44: 6569–6574, 2006     

On the summands of near-rings with ATM

We say that a near-ring (N,+,·) has an almost trivial multiplication (ATM) if the product of two elements belongs to the intersection of the additive cyclic groups generated by these two elements. We show that every finite near-ring with ATM can be decomposed to a direct sum where the summands are either near-rings defined on cyclic groups or near-rings whose minimal ideals are zero near-rings. Finally, we show how to construct these summands on cyclic groups.     

Improvement of UV-moulding accuracy by heat and solvent assisted process

A micro-optics replication process with UV-curable liquid pre-polymers is considered. Filling of the master structure is improved by controlling the viscosity of the pre-polymer by heat during the process. A novel process step, solvent-assisted filling, is introduced to avoid the harmful effect of the residual trapped air; a pyramidal retro-reflector structure with the face width of 400 μm is used as an example. Complete filling can be achieved without vacuum assisted replication or without application of compression force in the mould. Material studies showed no signs of chemical changes, solvent inclusion in the replicated structure, or a change of the optical properties of the material during the process. The replication fidelity is compared with conventional UV-moulding and commercial UV-NIL replication. The new heat and solvent assisted replication technique allows the use of high-viscosity pre-polymers with suitable material properties if the process temperature window is optimized.     

A DLL clock generator for a high speed A/D-converter with 1 ps jitter and skew calibrator with 1 ps precision in 0.35 μm CMOS

This paper presents a clock generator circuit for a high-speed analog-to-digital converter (ADC). A time-interleaved ADC requires accurate clocking for the converter fingers. The target ADC has 12 interleaved fingers each running at a speed of 166 MS/s, which corresponds to an equivalent sampling frequency of 2 GS/s. A delay-locked loop (DLL) based clock generator has been proposed to provide multiple clock signals for the converter. The DLL clock generator has been implemented with a 0.35 μm SiGe BiCMOS process (only MOS-transistor were used in DLL) by Austria Micro Systems and it occupies a 0.6 mm² silicon area. The measured jitter of the DLL is around 1 ps and the delay between phases can be adjusted using 1 ps precision.     

Internal rotation in propionic acid: near-infrared-induced isomerization in solid argon

The conformational system of propionic acid (CH3CH2COOH) is studied in solid argon. It is predicted by the ab initio calculations that this molecule has four stable conformers. These four structures are denoted Tt, Tg+/-, Ct, and Cg+/-, and they differ by the arrangement around the C-O and Calpha-C bonds. The ground-state Tt conformer is the only form present at 8 K after deposition of an argon matrix containing propionic acid. For the CH3CH2COOH and CH3CH2COOD isotopologues, narrow-band excitation of the first hydroxyl stretching overtone of the conformational ground state promotes the Calpha-C and C-O internal rotations producing the Tg+/- and Ct conformers, respectively. A subsequent vibrational excitation of the produced Tg+/- form induces its conversion to the Cg+/- conformer by rotation around the C-O bond. In the dark, all of the produced conformers decay to the conformational ground state at different rates. The decay kinetics and its temperature dependence allow the identification of the conformers by IR absorption spectroscopy, which is supported by ab initio calculations of their vibrational spectra. For the CH3CH2COOD isotopologue, the excitation of molecules isolated in different matrix sites results in site-dependent photoisomerization rates for the Calpha-C and C-O internal rotations, which also confirm the identification of the photoproducts.