Atomistic simulation of InGaN/GaN quantum disk LEDs

In this work electronic and optoelectronic properties of InGaN/GaN nanocolumn quantum disk LEDs have been studied with the multiscale simulation tool tiberCAD. Calculations have been performed with an atomistic tight-binding model. Results shows that emission energies have a minor dependence on the nanocolumn dimension while In concentration in the active region is a critical parameter.     

Molds and Resists Studies for Nanoimprint Lithography of Electrodes in Low-Voltage Polymer Thin-Film Transistors

A low-cost patterning of electrodes was investigated looking forward to replacing conventional photolithography for the processing of low-operating voltage polymeric thin-film transistors. Hard silicon, etched by sulfur hexafluoride and oxygen gas mixture, and flexible polydimethylsiloxane imprinting molds were studied through atomic force microscopy (AFM) and field emission gun scanning electron microscopy. The higher the concentration of oxygen in reactive ion etching, the lower the etch rate, sidewall angle, and surface roughness. A concentration around 30 % at 100 mTorr, 65 W and 70 sccm was demonstrated as adequate for submicrometric channels, presenting a reduced etch rate of 176 nm/min. Imprinting with positive photoresist AZ1518 was compared to negative SU-8 2002 by optical microscopy and AFM. Conformal results were obtained only with the last resist by hot embossing at 120 °C and 1 kgf/cm² for 2 min, followed by a 10 min post-baking at 100 °C. The patterning procedure was applied to define gold source and drain electrodes on oxide-covered substrates to produce bottom-gate bottom-contact transistors. Poly(3-hexylthiophene) (P3HT) devices were processed on high-κ titanium oxynitride (TiO _x N _y ) deposited by radiofrequency magnetron sputtering over indium tin oxide-covered glass to achieve low-voltage operation. Hole mobility on micrometric imprinted channels may approach amorphous silicon (～0.01 cm²/V s) and, since these devices operated at less than 5 V, they are not only suitable for electronic applications but also as sensors in aqueous media.     

Synchronization and Non-Smooth Dynamical Systems

In this article we establish an interaction between non-smooth systems, geometric singular perturbation theory and synchronization phenomena. We find conditions for a non-smooth vector fields be locally synchronized. Moreover its regularization provide a singular perturbation problem with attracting critical manifold. We also state a result about the synchronization which occurs in the regularization of the fold-fold case. We restrict ourselves to the 3-dimensional systems (ℓ = 3) and consider the case known as a T-singularity.     

Sobolev spaces on Lie groups: Embedding theorems and algebra properties

Let G be a noncompact connected Lie group, denote with ρ a right Haar measure and choose a family of linearly independent left-invariant vector fields X on G satisfying Hörmander's condition. Let χ be a positive character of G and consider the measure ${\mu }_{\chi }$ whose density with respect to ρ is χ. In this paper, we introduce Sobolev spaces $L_{\alpha }^p({\mu }_{\chi })$ adapted to X and ${\mu }_{\chi }$ ($1<p<\infty$, $\alpha \ge 0$) and study embedding theorems and algebra properties of these spaces. As an application, we prove local well-posedness and regularity results of solutions of some nonlinear heat and Schrödinger equations on the group.