Study of band offsets in InN/Ge heterojunctions

InN layers were directly grown on Ge substrate by plasma-assisted molecular beam epitaxy (PAMBE). The valence band offset (VBO) of wurtzite InN/Ge heterojunction is determined by X-ray photoemission spectroscopy (XPS). The valence band of Ge is found to be 0.18 ± 0.04 eV above that of InN and a type-II heterojunction with a conduction band offset (CBO) of ~ 0.16 eV is found. The accurate determination of the VBO and CBO is important for the design of InN/Ge based electronic devices.     

The impact of ultra thin silicon nitride buffer layer on GaN growth on Si (1 1 1) by RF-MBE

Ultra thin films of pure silicon nitride were grown on a Si (1 1 1) surface by exposing the surface to radio-frequency (RF) nitrogen plasma with a high content of nitrogen atoms. The effect of annealing of silicon nitride surface was investigated with core-level photoelectron spectroscopy. The Si 2p photoelectron spectra reveals a characteristic series of components for the Si species, not only in stoichiometric Si₃N₄ (Si⁴⁺) but also in the intermediate nitridation states with one (Si¹⁺) or three (Si³⁺) nitrogen nearest neighbors. The Si 2p core-level shifts for the Si¹⁺, Si³⁺, and Si⁴⁺ components are determined to be 0.64, 2.20, and 3.05 eV, respectively. In annealed sample it has been observed that the Si⁴⁺ component in the Si 2p spectra is significantly improved, which clearly indicates the crystalline nature of silicon nitride. The high resolution X-ray diffraction (HRXRD), scanning electron microscopy (SEM) and photoluminescence (PL) studies showed a significant improvement of the crystalline qualities and enhancement of the optical properties of GaN grown on the stoichiometric Si₃N₄ by molecular beam epitaxy (MBE).     

Kinetics of self-assembled InN quantum dots grown on Si (111) by plasma-assisted MBE

One of the scientific challenges of growing InN quantum dots (QDs), using Molecular beam epitaxy (MBE), is to understand the fundamental processes that control the morphology and distribution of QDs. A systematic manipulation of the morphology, optical emission, and structural properties of InN/Si (111) QDs is demonstrated by changing the growth kinetics parameters such as flux rate and growth time. Due to the large lattice mismatch, between InN and Si (~8%), the dots formed from the Strannski–Krastanow (S–K) growth mode are dislocated. Despite the variations in strain (residual) and the shape, both the dot size and pair separation distribution show the scaling behavior. We observed that the distribution of dot sizes, for samples grown under varying conditions, follow the scaling function.     

Recent advances in the synthesis of C-5-substituted analogs of 3,4-dihydropyrimidin-2-ones: A review

3,4-Dihydropyrimidin-2-ones act as a versatile scaffold in organic synthesis, which serves as a significant template for the development of various therapeutic agents and shows a wide spectrum of activities. The attractive application of 3,4-dihydropyrimidin-2-ones in organic synthesis is undoubtedly owing to C-5 ester group, which is responsible for the change in its bioactivity. Introduction of various groups like electron-withdrawing and electron-donating groups at positions 1, 2, 3, 5, and 6 greatly increased biological activity. Significant efforts have been undertaken to exploit different synthetic routes to synthesize various derivatives of 3,4-dihydropyrimidin-2-ones. This review article gives a comprehensive account of the synthetic utility of C-5 substitution of 3,4-dihydropyrimidin-2-ones used in the design and synthesis of different types of compounds with greater emphasis on recent literature.     

Interaction of bathocuproine with metals (Ca, Mg, Al, Ag, and Au) studied by density functional theory

Electronic structure of the interface between a bathocuproine (BCP) molecule and metal surface was studied by density functional theory. The bond energy of BCP with metal surface increased with decreasing work function of metals, that is, Au, Ag, Al, Mg, and Ca in this order. The charge transfer also increased with decreasing metal work function. It was analyzed that the Fermi level and the lowest unoccupied molecular orbital of BCP are composed of both BCP and metal orbital component, and electron transport properties across the BCP and metal is discussed based on these analyses.     

Enantiospecific first total synthesis and confirmation of the relative and absolute stereostructure of isocalamusenone

The enantiospecific total synthesis of two epimers of the sesquiterpene isocalamusenone has been accomplished starting from the readily available monoterpene (R)-limonene, which of the natural product established the stereostructure and the absolute configuration.     

A numerical investigation of energy dissipation with a shallow depth sloshing absorber

A liquid sloshing absorber consists of a container, partially filled with liquid. The absorber is attached to the structure to be controlled, and relies on the structure’s motion to excite the liquid. Consequently, a sloshing wave is produced at the liquid free surface within the absorber, possessing energy dissipative qualities. The behaviour of liquid sloshing absorbers has been well documented, although their use in structural control applications has attracted considerably less attention.