The thermodynamic characteristics of formation of vacancies in carbon subgroup element crystals

A method for calculating the parameters of formation of vacancies in crystals formed by spherically symmetrical atoms was developed. Both quantum effects at low temperatures and the possibility of the delocalization of atoms at high temperatures were studied. The parameters of formation of vacancies in carbon subgroup element crystals C-diam, Si, Ge, α-Sn, and Pb were calculated. The inclusion of the delocalization of atoms was shown to increase the enthalpy, entropy, and volume of vacancy formation. At low temperatures, the parameters of vacancy formation were found to depend strongly on the temperature, and the entropy of vacancy formation became negative. At high temperatures, close agreement with experimental data and theoretical estimates reported by other authors was obtained. The temperature dependence of vacancy parameters was studied for diamond heated isobarically from 100 to 4500 K. The applicability scope of the Arrhenius equation with a temperature-independent activation energy is discussed. The validity of the “compensation rule” (correlation between the entropy and enthalpy of vacancy formation) was demonstrated. It was also shown that the volume and entropy of vacancy formation were correlated over the whole temperature range studied.

     

Direct adaptive control of nonminimum phase systems using integralaction

A direct adaptive control scheme is proposed for nonminimum-phase systems in which controller parameters are estimated from the recursive least-squares algorithm and additional auxiliary parameters are obtained from the proposed polynomial identity. A local convergence is guaranteed without any extra condition. Integral action is incorporated into the adaptive controller to eliminate the steady-state error and to satisfy a condition of the unique solution for the polynomial identity. The control law used in this scheme is based on the set-point-on-I-only proportional-integral-derivative (PID) structure     

K X-ray production cross sections for 40-180 keV protons

Considering the importance of the X-ray production cross sections for the determination of the element concentrations in a given material, we have measured them experimentally for Al Si, Sc, Ti, V, Fe, Co, Ni and Cu bombarded by protons with energies ranging from 40 to 180 keV. This revised version was published online in July 2006 with corrections to the Cover Date.     

High-gain pseudomorphic InGaAs base ballistic hot-electron device

A high-gain ballistic hot-electron device is described. The GaAs-AlGaAs heterostructure device, with a 21-mm-thick pseudomorphic In _0.12Ga_0.88As base, had a current gain of 27 at 77 K and 41 at 4.2 K. As characteristically seen in ballistic devices, transfer into the L valley limited the maximum gain. The Γ-L valley separation in the strained In_0.12Ga_0.88As was estimated to be about 380 meV     

Arc root mobility on piezoelectrically actuated contacts in miniature circuit breakers

A novel contact opening mechanism has been developed using a piezoelectric actuator to open the contacts in a low contact opening velocity circuit breaker. The arc control on the contacts is critical for successful current interruption (10/sup 3/-10/sup 4/ A) in low voltage (<250V) devices. Previous work has shown how arc root commutation from the contact region into the arc chamber is affected by arc chamber materials, contact materials and the gap behind the moving contact for contact velocities between 1ms/sup -1/ and 10ms/sup -1/. This work is extended using a commercially available piezoelectric actuator to open the contacts. Contact opening speeds are assessed and the arc root mobility is characterized under this operating regime. A flexible test apparatus and solid-state high-speed arc imaging system are used to gather data on the arc root during the opening of the contacts. New experimental results are presented on the anode and cathode root velocity and arc root motion in an arc chamber with piezoelectrically actuated contact opening. These results can be used to improve the design of high current low voltage circuit breakers suitable for piezoelectric actuation.     

A WKB analysis of the buckling condition for a cylindrical shell of arbitrary thickness subjected to an external pressure

We consider the plane-strain buckling of a cylindrical shellof arbitrary thickness which is made of a Varga material andis subjected to an external hydrostatic pressure on its outersurface. The WKB method is used to solve the eigenvalue problemthat results from the linear bifurcation analysis. We show thatthe circular cross-section buckles into a non-circular shapeat a value of µ₁ which depends on A₁/A₂ and a mode number,where A₁ and A₂ are the undeformed inner and outer radii, andµ₁ is the ratio of the deformed inner radius to A₁. Inthe large mode number limit, we find that the dependence ofµ₁ on A₁/A₂ has a boundary layer structure: it is constantover almost the entire region of 0 < A₁/A₂ < 1 and decreasessharply from this constant value to unity as A₁/A₂ tends tounity. Our asymptotic results for A₁ – 1 = O(1) and A₁– 1 = O(1/n) are shown to agree with the numerical resultsobtained by using the compound matrix method.     

A Recursive Frequency Estimator Using Linear Prediction and a Kalman-Filter-Based Iterative Algorithm

This paper proposes a new Kalman-filter-based recursive frequency estimator for discrete-time multicomponent sinusoidal signals whose frequencies may be time-varying. The frequency estimator is based on the linear prediction approach and it employs the Kalman filter to track the linear prediction coefficients (LPCs) recursively. Frequencies of the sinusoids can then be computed using the estimated LPCs. Due to the coloredness of the linear prediction error, an iterative algorithm is employed to estimate the covariance matrix of the prediction error and the LPCs alternately in the Kalman filter in order to improve the tracking performance. Simulation results show that the proposed Kalman-filter-based iterative frequency estimator can achieve better tracking results than the conventional recursive least-squares-based estimators.     

Design Techniques of CMOS Ultra-Wide-Band Amplifiers for Multistandard Communications

This paper presents design techniques of CMOS ultra-wide-band (UWB) amplifiers for multistandard communications. The goal of this paper is to propose a compact, simple, and robust topology for UWB low-noise amplifiers, which yet consumes a relatively low power. To achieve this goal, a common-gate amplifier topology with a local feedback is employed. The first amplifier uses a simple inductive peaking technique for bandwidth extension, while the second design utilizes a two-stage approach with an added gain control feature. Both amplifiers achieve a flat bandwidth of more than 6 GHz and a gain of higher than 10 dB with supply voltages of 1.8-2.5 V. Designs with different metal thicknesses are compared. The advantage of using thick-metal inductors in UWB applications depends on the chosen topology.