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21.
Inspired by the recent work [HHM03], we prove two stability results for compact Riemannian manifolds with nonzero parallel spinors. Our first result says that Ricci flat metrics which also admit nonzero parallel spinors are stable (in the direction of changes in conformal structures) as the critical points of the total scalar curvature functional. Our second result, which is a local version of the first one, shows that any metric of positive scalar curvature cannot lie too close to a metric with nonzero parallel spinor. We also prove a rigidity result for special holonomy metrics. In the case of SU(m) holonomy, the rigidity result implies that scalar flat deformations of Calabi-Yau metric must be Calabi-Yau. Finally we explore the connection with a positive mass theorem of [D03], which presents another approach to proving these stability and rigidity results. Dedicated to Jeff Cheeger for his sixtieth birthday 相似文献
22.
利用引进的制造技术和设备,制作出了 APT(STLRI)—1.78型系列化光纤连接器。 相似文献
23.
Enhanced light output in nitride-based light-emitting diodes by roughening the mesa sidewall 总被引:1,自引:0,他引:1
Chia-Feng Lin Zhong-Jie Yang Jing-Hui Zheng Jing-Jie Dai 《Photonics Technology Letters, IEEE》2005,17(10):2038-2040
In this letter, we will report on a nitride-based light emitting diode with a mesa sidewall roughening process that increases light output power. The fabricated GaN-based light-emitting diode (LED) wafers were first treated through a photoelectrochemical (PEC) process. The Ga/sub 2/O/sub 3/ layers then formed around the GaN : Si n-type mesa sidewalls and the bottoms mesa etching regions. Selective wet oxidation occurred at the mesa sidewall between the p- and the n-type GaN interface. The light output power of the PEC treated LED was seen to increase by about 82% which was caused by a reduced index reflectance of GaN-Ga/sub 2/O/sub 3/-air layers, by a rough Ga/sub 2/O/sub 3/ surface, by a microroughening of the GaN sidewall surface, and by a selective oxidation step profile of the mesa sidewall that increases the light-extraction efficiency from the mesa sidewall direction. Consequently, this wet PEC treated process is suitable for high powered nitride-based LEDs lighting applications. 相似文献
24.
Yang Dai Faquan Li Xuewu Cheng Zhiling Jiang Shunsheng Gong 《Optics & Laser Technology》2007,39(7):1374-1379
In Shack–Hartmann wavefront sensor (SHWS), the behavior of the irradiance pattern produced by the micro-lens array is important for an accurate centroid estimation. In this paper, the behavior of a micro-lens array in SHWS is analyzed using Fourier optics, and reveals that in addition to the main, expected spots, secondary spots with smaller intensities also appeared as a result of diffraction by the small dimensions of the micro-lens and interference from the different micro-lenses. This result is confirmed by comparing with a irradiance pattern taken from an actual SHWS. The additional error in centroid estimation caused by these secondary spots is discussed and relationship to the parameters of the micro-lens of SHWS is analyzed. 相似文献
25.
26.
通过调整Mn的成分,系统地研究了Ni81Fe19/Ni100-xMnx双层膜的磁学性质,特别是交换偏置场(Hex)的变化.当Ni100-xMnx中Mn的原子百分比在534%到600%之间时,对于150nm的Ni81Fe19,得到了最大的交换偏置场175kA/m,同时由于Mn对Ni81Fe19层的扩散所造成的磁矩的降低小于20%;高角x射线衍射证明Ni100-xMnx的晶格常数随着Mn成分的改变而变化,Mn含量越多,其晶格常数越大;制备态Ni100-xMnx膜晶格常数与θ相NiMn膜晶格常数的接近程度与NiMn膜θ相形成的容易程度相对应.也研究了交换偏置场随着Ni100-xMnx厚度的变化,第一次得到了当Ni100-xMnx中Mn的原子百分比为706%时,Ni81Fe19(150nm)/Ni100-xMnx(90nm)双层膜在经过240℃,5h退火后,可以有80kA/m的交换偏置场,此时铁磁层磁矩的大小几乎不变.
关键词:
Ni81Fe19/Ni100-xMnx
交换偏置场 相似文献
27.
根据耦合非线性薛定谔方程 ,本文研究了偏振模色散如何影响各种码型的频谱 ,分析了滑频滤波器和固定滤波器对偏振模色散的补偿作用。研究结果表明 :偏振模色散对不同码型的频谱影响是不一样的 ,对色散管理孤子的频谱影响最大 ,产生新的频率分量也最多 ,而且每个新频率分量都较强 ,比入射频谱展宽许多 ;滑频滤波器和固定滤波器对偏振模色散都具有补偿作用 ,使最大可传输距离成倍增加 ,两种滤波器对偏振模色散的补偿作用相差较小 ;但是对色散管理孤子系统中的偏振模色散补偿效果最佳。 相似文献
28.
29.
The microstructure of CosoNi22Ga28 ribbon with the L10 structure is examined. The band-like morphology is observed. These bands with the width in a range of 40-200 nm appear along the transverse direction of the ribbon. The giant magnetoimpedance (GMI) effect in this alloy is measured. The results show that Co5oNi22Ga28 exhibits a sharp peak of the GAI effect. The maximum GAH ratio up to 360% is detected. The GMI effect measured versus temperature shows large jumps of the magnetoimpedance amplitude at the reversal martensitic transformation temperature 240℃ and Curie temperature 375℃C respectively. The jump ratios of the magnetoimpedance amplitude examined at these temperatures are about 5 and 10, respectively. 相似文献
30.
Three N-3-phenyl-2-propenoyl amino acids were synthesized through interaction between 3-phenyl-2-propenoyl chloride and amino acids in alkaline with a high Yield.Structure of the products were identified by elemental analysis,IR and NMR spectroscopy. 相似文献