Polarisation insensitive semiconductor optical amplifier withintegrated electroabsorption modulators

The authors demonstrate a 1.55 μm wavelength multiquantum well semiconductor optical amplifier, integrated with bulk layer electroabsorption modulators and passive waveguide beam expanders at the input and output ports. The device has a fibre to fibre gain of 9 dB, an extinction ratio of 15 dB per modulator, a spectral range >35 nm, and polarisation sensitivity <1 dB     

Adaptive detection of DS/CDMA signals in fading channels

This paper examines the behavior of the minimum mean-squared error (MMSE) receiver in frequency-nonselective-fading channels. It is noted that the MMSE receiver will often lose phase lock on the desired signal when the desired signal dips into a deep fade. A modification to the MMSE receiver is presented which is demonstrated to function quite nicely in flat-fading channels. Analytical results for the modified MMSE receiver are presented and found to agree very well with simulation results. These analytical results are then compared to the theoretical performance of the conventional (i.e., correlator) receiver in terms of both bit-error rate (BER) and capacity. As expected, the modified MMSE receiver was found to offer a substantial improvement in both BER and capacity. Finally, a simple empirically derived formula is given which will give a good approximation to the BER of the modified MMSE receiver in a Rayleigh-fading environment. This formula can also be used to determine the number of users a given system can support. It is noted that as E_b/N₀ grows, it is quite feasible to approach 100% channel utilization with the MMSE receiver, whereas a conventional receiver is typically limited to a utilization of 10%-20%     

Gelation of poly(n-butylisocyanate) in benzene

Poly (n-butylisocyanate)-benzene solutions prepared by solubilization at 45°C, followed by aging at room temperature were found to be metastable for months, although, eventually, they separated into a birefringent polymer-rich phase and an isotropic solution. These metastable solutions, as well as isothermally phase-separated biphasic samples, flowed and exhibited dynamic moduli indicative of low polymer connectivity. By contrast samples prepared by a freeze-thaw cycle were uniformly and highly birefringent and showed network (gel) behavior at room temperature. The mechanism of gel formation is most likely the exclusion of the polymer from the benzene crystal during crystallization, forcing the polymer to align and exist at grain boundaries. Films formed from solutions have different moduli than those formed from gels, and are consistent with the proposed mechanism.     

A DBR laser tunable by resistive heating

A distributed Bragg reflector (DBR) laser tuned by resistive heating is presented. It has a tuning range greater than 10 nm with only a 33% reduction in output power and a 10% increase in linewidth. Its behavior is easily modeled, agreeing well with simple theory     

Radical copolymerization of 2‐trifluoromethylacrylic monomers. II. Kinetics,monomer reactivities,and penultimate effect in their copolymerization with norbornenes and vinyl ethers

Radical copolymerizations of electron‐deficient 2‐trifluoromethylacrylic (TFMA) monomers, such as 2‐trifluoromethylacrylic acid and t‐butyl 2‐trifluoromethylacrylate (TBTFMA), with electron‐rich norbornene derivatives and vinyl ethers with 2,2′‐azobisisobutyronitrile as the initiator were investigated in detail through the analysis of the kinetics in situ with ¹H NMR and through the determination of the monomer reactivity ratios. The norbornene derivatives used in this study included bicyclo[2.2.1]hept‐2‐ene (norbornene) and 5‐(2‐trifluoromethyl‐1,1,1‐trifluoro‐2‐hydroxylpropyl)‐2‐norbornene. The vinyl ether monomers were ethyl vinyl ether, t‐butyl vinyl ether, and 3,4‐dihydro‐2‐H‐pyran. Vinylene carbonate was found to copolymerize with TBTFMA. Although none of the monomers underwent radical homopolymerization under normal conditions, they copolymerized readily, producing a copolymer containing 60–70 mol % TFMA. The copolymerization of the TFMA monomer with norbornenes and vinyl ethers deviated from the terminal model and could be described by the penultimate model. The copolymers of TFMA reported in this article were evaluated as chemical amplification resist polymers for the emerging field of 157‐nm lithography. © 2004 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 42: 1478–1505, 2004     

A Maximum Entropy Approach for Collaborative Filtering

Collaborative filtering (CF) involves predicting the preferences of a user for a set of items given partial knowledge of the user's preferences for other items, while leveraging a database of profiles for other users. CF has applications e.g. in predicting Web sites a person will visit and in recommending products. Fundamentally, CF is a pattern recognition task, but a formidable one, often involving a huge feature space, a large data set, and many missing features. Even more daunting is the fact that a CF inference engine must be capable of predicting any (user-selected) items, given any available set of partial knowledge on the user's other preferences. In other words, the model must be designed to solve any of a huge (combinatoric) set of possible inference tasks. CF techniques include memory-based, classification-based, and statistical modelling approaches. Among these, modelling approaches scale best with large data sets and are the most adept at handling missing features. The disadvantage of these methods lies in the statistical assumptions (e.g. feature independence), which may be unjustified. To address this shortcoming we propose a new model-based CF method, based on the maximum entropy principle. For the MS Web application, the new method is demonstrated to outperform a number of CF approaches, including naive Bayes and latent variable (cluster) models, support vector machines (SVMs), and the (Pearson) correlation method.     

Constructing one-parameter families of elliptic curves with moderate rank

We give several new constructions for moderate rank elliptic curves over Q(T). In particular we construct infinitely many rational elliptic surfaces (not in Weierstrass form) of rank 6 over Q using polynomials of degree two in T. While our method generates linearly independent points, we are able to show the rank is exactly 6 without having to verify the points are independent. The method generalizes; however, the higher rank surfaces are not rational, and we need to check that the constructed points are linearly independent.     

Growth and characterization of GaAs films deposited on Ge/Si composite substrates by metalorganic chemical vapor deposition

We report the results of studies which have been made on heteroepitaxial layers of GaAs and AlGaAs grown by metalorganic chemical vapor deposition on composite substrates that consist of four different types of heteroepitaxial layered structures of Ge and Ge-Si grown by molecular beam epitaxy on (100)-oriented Si substrates. It is found that of the four structures studied, the preferred composite substrate is a single layer of Ge ∼1 μm thick grown directly on a Si buffer layer. The double-crystal X-ray rocking curves of 2 μm thick GaAs films grown on such substrates have FWHM values as small as 168 arc sec. Transmission electron micrographs of these Ge/Si composite substrates has shown that the number of dislocations in the Ge heteroepitaxial layer can be greatly reduced by an anneal at about 750° C for 30 min which is simultaneously carried out during the growth of the GaAs layer. The quality of the GaAs layers grown on these composite substrates can be greatly improved by the use of a five-period GaAs-GaAsP strained-layer superlattice (SLS). Using the results of these studies, low-threshold optically pumped AlGaAs-GaAs DH laser structures have been grown by MOCVD on MBE Ge/Si composite substrates.     

Noninterfering optical method of HBT circuit evaluation

The authors report a novel noninterfering and simple approach for evaluation of circuits implemented with AlGaAs/GaAs heterojunction bipolar transistors (HBTs). This method makes use of radiative recombination in the base region of current-carrying HBTs. The infrared radiation emitted is 'visible' to the closed-circuit TV (CCTV) cameras. Therefore, one can view the operation of the HBT circuit under test at normal biases with a TV monitor. This method can be used to determine logic states of gates, as well as collector current of individual HBTs within integrated circuits.<>