1/f noise of GaAs resistors on semi-insulating substrates

A new theory is used to analyze the 1/f noise of GaAs resistors on semi-insulating substrates. It is demonstrated that this model can explain previously published results at moderately high frequencies for, in this example, resistive filaments on semi-insulating GaAs substrates. The model is based on a distributed equivalent circuit representation of the substrate, and shows that 1/f noise is a bulk phenomenon associated with the high resistivity substrates. The 1/f noise is not associated with number or mobility fluctuations in the channel, nor surface effects. One consequence of the theory is that in this particular instance Hooge's parameter is in reality no parameter, but is given by a simple formula which has a simple physical interpretation as the ratio of two charges: the thermal charge developed across the substrate capacitance and the charge associated with ionized donors in the resistor channel     

Tunneling and thermal emission of electrons from a distribution ofdeep traps in SiO2 [nMOSFET]

Both field-induced, or tunneling, and thermal emission of electrons from deep traps in the gate oxides on n-channel LDD CMOS devices have been observed and characterized. Experimental results show that the deep trapping effects at room temperature are similar to the shallow-level trapping effects observed by others below room temperature. In this case, however, the time constants involved are very long. This model and physical mechanisms can explain the apparent saturation observed under AC stress conditions, and also the differences observed between AC use conditions and DC stress     

Thermal noise and bit error rate limits in nanoscale memories

Analysis of the effects of thermal noise in nanoscale memories is presented. A theoretical analysis of thermal noise is used to predict the number of bit errors per year caused by thermal noise.     

Surface photoabsorption monitoring of the growth of GaAs and InGaAs at 650°C by MOCVD

By monitoring the cyclic behavior of surface photoabsorption (SPA) reflectance changes during the growth of GaAs at 650°C and with sufficient H₂ purging time between the supply of trimethylgallium and AsH₃, we have been able to achieve controlled growth of GaAs down to a monolayer. Our results show, as confirmed by photoluminescence (PL) measurements, the possibility of growing highly accurate quantum well heterostructures by metalorganic chemical vapor deposition at conventional growth temperatures. We also present our PL measurements on the InGaAs single quantum wells grown at this temperature by monitoring the SPA signal.     

Voice changes in women treated for endometriosis and related conditions: The need for comprehensive vocal assessment

Hormonal treatments which have an androgenic effect have the potential to cause vocal changes. The changes in vocal fold structure and voice quality are considered to be irreversible. To date, studies have documented subjective vocal changes or documented single cases without detailed, baseline voice assessments. The impact on laryngeal function of women taking these androgenic treatments requires further detailed, objective assessment. The need for increased awareness of the actions of androgenic hormones on womns' voices, and the benefits of a thorough voice assessment are discussed.     

Generalised regression problems in metrology

This paper is concerned with generalised regression models in metrology. In experiments where much is known about the nature of the error in the measurement data, it is possible to build comprehensive mathematical models which lead to better estimates of the required parameter values. We indicate how efficient optimisation algorithms can be developed which exploit the structure of the corresponding regression problems and discuss applications in generalised distance regression and pressure metrology.     

Descartes and the birth of analytic geometry

The traditional thesis that analytic geometry evolved from the concepts of axes of reference, co-ordinates, and loci, is rejected. The origins of this science are re-defined in terms of Egyptian, Greek, Babylonian, and Arabic influences merging in Vieta's Isagoge in artem analyticam (1591) and culminating in a work of his pupil Ghetaldi published posthumously in 1630. Descartes' Vera mathesis, conceived over a decade earlier, served to revive and strengthen the important link with logic and thereby to extend the field of application of this analytic method to the corporeal and moral worlds.     

Wavelength tuning in strained layer InGaAs-GaAs-AlGaAs quantum well lasers by selective-area MOCVD

Selective-area growth and regrowth using conventional atmospheric pressure metalorganic chemical vapor deposition is investigated for wavelength tuning in strained layer In_xGa_1-xAsGaAs-Al_y Ga_1-yAs quantum well lasers. Growth inhibition from a silicon dioxide mask is the mechanism used for the selective-area growth rate enhancement. By varying the width of the oxide stripe opening, differences in the growth rate yield different quantum well thicknesses, and hence different lasing wavelengths for devices on the same wafer. Both two-and three-step growth processes are utilized for selective-area epitaxy of strained layer In_xGa_1-xAs-GaAs quantum well active regions, with lasers successfully fabricated from the three-step growth. Scanning electron microscopy and transmission electron microscopy indicate that the absence of an oxide mask during Al_yGa_1-yAs growth is essential for successful device operation. A wide wavelength tuning range of over 630Å is achieved for lasers grown on the same substrate.     

Application of the MOSFET device structure in characterizing imperfection centers in indium-doped silicon

C.T. Sah has published a review article demonstrating the application of high-frequency small signal capacitance and current transients of a space charge layer. Application of such transients is a powerful technique in characterizing deep level imperfection center concentrations, energy levels, thermal and optical emission rates and thermal capture cross sections. The MOSFET device structure is particularly convenient for low temperature measurements of shallow levels where deionization occurs and the substrate becomes highly resistive, seriously limiting capacitance transient techniques. Examples are given by results on indium-doped silicon, such as employed in extrinsic IR detectors. The emission time constant of holes from the neutral indium center has been found to depend on the indium doping. Measurements on lightly doped samples yield a value for the emission rate, $\text{1}\text{e}{}_{\mathrm{p}}$, of 6.0 msec at 77°K and a thermal activation energy of 0.15 eV. Measurements on heavily doped samples yield values of $\text{1}\text{e}{}_{\mathrm{p}}$ of 20 μsec at 77°K and an activation energy of 0.117 eV. These results are consistent with the Poole-Frenkel effect describing field enhanced thermal emission of holes from the indium center. Measurements of the hole capture coefficient at 77°K yield values for c_p of 3.7 × 10^?7 cm³/sec. These measurements have been made on heavily doped samples. The capture coefficient measured is the zero field or quasi-equilibrium value. The temperature dependence of the hole capture coefficient has been found to be T^?4. Small transients in the thermal emission rate measurements have been observed. These transients have thermal activation energies of around 0.08 eV and are associated with the 0.11 eV level as reported by Hughes Research Labs after accounting for barrier lowering by the Poole-Frenkel effect.