Intelligent process analytics for CRM

Many organisations use decision models in their processes such as tables or trees to provide decision support to their operational divisions. For example, in fault management, customer contact centre operators usually use a decision model in the form of prescribed interviews. Based on the answers given by customers, the operator navigates through the decision model to reach an assessment of the problem. In order to achieve customer satisfaction and operational excellence, it is very important to constantly monitor the performance of a decision model not only on an overall level, but also on the level of individual decisions. In this paper we present a configurable business process analytics tool, known as the intelligent Universal Service Management System, that constantly monitors decision data and is capable of optimising the decisions based on high-level business objectives. We explain the various features of the software and show how it can be used to optimise decision processes. We also show how we can easily provide a customised version to monitor the performance of provision processes.     

Profile-Driven Component Placement for Cluster-Based Online Services

The growth of the Internet and of various intranets has spawned a wealth of online services, most of which are implemented on local-area clusters using remote invocation (for example, remote procedure call/remote method invocation) among manually placed application components. Component placement can be a significant challenge for large-scale services, particularly when application resource needs are workload dependent. Automatic component placement has the potential to maximize overall system throughput. The key idea is to construct (offline) a mapping between input workload and individual-component resource consumption. Such mappings, called component profiles, then support high-performance placement. Preliminary results on an online auction benchmark based on J2EE (Java 2 Platform, Enterprise Edition) suggest that profile-driven tools can identify placements that achieve near-optimal overall throughput.     

Minimax estimation of deterministic parameters in linear models with a random model matrix

We consider the problem of estimating an unknown deterministic parameter vector in a linear model with a random model matrix, with known second-order statistics. We first seek the linear estimator that minimizes the worst-case mean-squared error (MSE) across all parameter vectors whose (possibly weighted) norm is bounded above. We show that the minimax MSE estimator can be found by solving a semidefinite programming problem and develop necessary and sufficient optimality conditions on the minimax MSE estimator. Using these conditions, we derive closed-form expressions for the minimax MSE estimator in some special cases. We then demonstrate, through examples, that the minimax MSE estimator can improve the performance over both a Baysian approach and a least-squares method. We then consider the case in which the norm of the parameter vector is also bounded below. Since the minimax MSE approach cannot account for a nonzero lower bound, we consider, in this case, a minimax regret method in which we seek the estimator that minimizes the worst-case difference between the MSE attainable using a linear estimator that does not know the parameter vector, and the optimal MSE attained using a linear estimator that knows the parameter vector. For analytical tractability, we restrict our attention to the scalar case and develop a closed-form expression for the minimax regret estimator.     

1/f noise in large-area Hg<Subscript>1−x</Subscript>Cd<Subscript>x</Subscript>Te photodiodes

The 1/f noise in photovoltaic (PV) molecular-beam epitaxy (MBE)-grown Hg_1−xCd_xTe double-layer planar heterostructure (DLPH) large-area detectors is a critical noise component with the potential to limit sensitivity of the cross-track infrared sounder (CrIS) instrument. Therefore, an understanding of the origins and mechanisms of noise currents in these PV detectors is of great importance. Excess low-frequency noise has been measured on a number of 1000-μm-diameter active-area detectors of varying “quality” (i.e., having a wide range of I-V characteristics at 78 K). The 1/f noise was measured as a function of cut-off wavelength under illuminated conditions. For short-wave infrared (SWIR) detectors at 98 K, minimal 1/f noise was measured when the total current was dominated by diffusion with white noise spectral density in the mid-10⁻¹⁵A/Hz^1/2 range. For SWIR detectors dominated by other than diffusion current, the ratio, α, of the noise current in unit bandwidth i_n(f = 1 Hz, V_d = −60 mV, and Δf = 1 Hz) to dark current I_d(V_d = −60 mV) was α_SW-d = i_n/I_d ∼ 1 × 10⁻³. The SWIR detectors measured at 0 mV under illuminated conditions had median α_SW-P = i_n/I_ph ∼ 7 × 10⁻⁶. For mid-wave infrared (MWIR) detectors, α_MW-d = i_n/I_d ∼ 2 × 10⁻⁴, due to tunneling current contributions to the 1/f noise. Measurements on forty-nine 1000-μm-diameter MWIR detectors under illuminated conditions at 98 K and −60 mV bias resulted in α_MW-P = i_n/I_ph = 4.16 ± 1.69 × 10⁻⁶. A significant point to note is that the photo-induced noise spectra are nearly identical at 0 mV and 100 mV reverse bias, with a noise-current-to-photocurrent ratio, α_MW-P, in the mid 10⁻⁶ range. For long-wave infrared (LWIR) detectors measured at 78 K, the ratio, α_LW-d = i_n/I_d ∼ 6 × 10⁻⁶, for the best performers. The majority of the LWIR detectors exhibited α_LW-d on the order of 2 × 10⁻⁵. The photo-induced 1/f noise had α_LW-P = i_n/I_ph ∼ 5 × 10⁻⁶. The value of the noise-current-to-dark-current ratio, α appears to increase with increasing bandgap. It is not clear if this is due to different current mechanisms impacting 1/f noise performance. Measurements on detectors of different bandgaps are needed at temperatures where diffusion current is the dominant current. Excess low-frequency noise measurements made as a function of detector reverse bias indicate 1/f noise may result primarily from the dominant current mechanism at each particular bias. The 1/f noise was not a direct function of the applied bias.     

MULTICARRIER DS—CDMA WITH ADAPTIVE MODULATION AND POWER ALLOCATION

Adaptive modulation and power allocation is introduced into the multicarrier DSCDMA system to improve the system performance and bandwidth efficiency.First,the system design appropriate for adaptive modulation and power allocation is given,then the algorithm of adaptive modulation and power allocation is applied.Simulation results demonstrate great performance improvement compared with the fixed modulated one.     

High dynamic range InP HBT delta-sigma analog-to-digital converters

To date, the development of multifunction multicarrier digital receivers for cellular base station and military communications applications has been limited by the demanding dynamic range requirements for the analog-to-digital converter (ADC). The use of oversampling delta-sigma modulators provides a promising approach to overcoming the dynamic range barriers Nyquist-rate converters face in the same applications. This paper discusses issues involved in the design of high-speed high dynamic range wide-band delta-sigma ADCs for such communications applications. Test results of prototype designs are also presented. The delta-sigma modulators described in this paper operate at sampling frequencies ranging from 1 to 2.5 GHz with center frequencies ranging from dc to 100 MHz, providing between 74 and 84.2 dB signal-to-noise ratio (12 and 13.7 bits) for bandwidths of 25 and 12.5 MHz, respectively. The loop filters are continuous-time low-pass and bandpass implementations of order 6 and 10, and were fabricated in an InP heterojunction bipolar (HBT) technology. A typical tenth-order design consumes 6 W of power and occupies a die area of 23.5 mm/sup 2/.     

Influence of device engineering on the analog and RF performances of SOI MOSFETs

This work presents a systematic comparative study of the influence of various process options on the analog and RF properties of fully depleted (FD) silicon-on-insulator (SOI), partially depleted (PD) SOI, and bulk MOSFET's with gate lengths down to 0.08 /spl mu/m. We introduce the transconductance-over-drain current ratio and Early voltage as key figures of merits for the analog MOS performance and the gain and the transition and maximum frequencies for RF performances and link them to device engineering. Specifically, we investigate the effects of HALO implantation in FD, PD, and bulk devices, of film thickness in FD, of substrate doping in SOI, and of nonstandard channel engineering (i.e., asymmetric Graded-channel MOSFETs and gate-body contacted DTMOS).     

An improved statistical analysis of the least mean fourth (LMF) adaptive algorithm

The paper presents an improved statistical analysis of the least mean fourth (LMF) adaptive algorithm behavior for a stationary Gaussian input. The analysis improves previous results in that higher order moments of the weight error vector are not neglected and that it is not restricted to a specific noise distribution. The analysis is based on the independence theory and assumes reasonably slow learning and a large number of adaptive filter coefficients. A new analytical model is derived, which is able to predict the algorithm behavior accurately, both during transient and in steady-state, for small step sizes and long impulse responses. The new model is valid for any zero-mean symmetric noise density function and for any signal-to-noise ratio (SNR). Computer simulations illustrate the accuracy of the new model in predicting the algorithm behavior in several different situations.