线列阵甚宽频带恒定束宽的数字实现方法

线性嵌套阵可以很好地在很宽的频率（N个倍频程，N=7）上实现恒定束宽。这种方法设计简单，又节省线阵阵元。本文给出了线性嵌套阵具体的数字化实现方法，解决了FIR滤波器设计，滤波器时间延迟等问题。由于数字化实现过程中使用了很多组FIR滤波器，计算量很大，文章采用了DSP信号处理板实现数字化算法，利用DSP处理板可以多任务同时处理优势，解决了计算量大的问题。经过实验验证，在DSP上实现的数字化的线性嵌套阵宽带恒定束宽方法满足了工程上实时处理的需要。     

Enantioseparation of Dencichine and D-Isomer on L-Cysteine Derivative Phase by Ligand-exchange Chromatography

Dencichine (β-N-oxalyl-L-α, β-diaminopropionic acid, L-ODAP), a nonprotein amino acid, is a haemostatic agent present in important Chinese medicinal herbs such as Panax notoginseng, as well as other Panax species1. It was first isolated from the seeds …     

3mm波段极近距离雷达

提出一种极近距离雷达概念，并导出其作用距离公式，在此基础上研制出一台３ｍｍ波段极近距离多普勒雷达样机．试验结果表明该雷达结构简单，成本低廉，在作用距离为零点几米至几米范围内可获得较高的定距精度．     

高抗冲聚丙烯序列结构的综合表征

用高分辨＾１３Ｃ ＮＭＲ、ＦＴＩＲ等手段获得了高抗冲聚丙烯的组成和序列分布等链结构方面的信息。用ＤＳＣ、ＷＡＸＤ等方法研究了它们的结晶行为、熔融转变及晶体结构，多种方法相结合有效地表征了高抗冲聚丙烯的序列结构。     

Comparisons of PWM and one-cycle control for power amplifier with multilevel converter

Based on the concepts of cascade multilevel converters and one-cycle technique, comparisons are conducted to characterize the distortion of the pulsewidth modulation (PWM) and one-cycle control methods that were applied to converters. Simulation results for the different control schemes are obtained in PSIM software initially to see the effect of one-cycle control different from that of PWM control. Through the comparisons, the advantages and disadvantages are identified for each method. The one-cycle scheme is better than PWM control in reducing undesirable harmonics and tracing dynamic waveforms. Simulation and experimental results are also provided to verify the conclusions.     

Ce偶-偶同位素低激发态性质的IBM2描述

通过考虑同类核子相干对间的四极相互作用，在IBM2中对Ce偶－偶同位素^128Ce-^138Ce的低激发态能谱和E2跃迁几率及分支比进行了理论分析，计算结果有效地改善了IBM中这些核的γ带能谱的Staggering现象描述，与实验观察到的低激发态结果基本一致。     

Call control and traffic transport for connection-oriented highspeed wireless personal communications over metropolitan area networks

A distributed circuit-switched approach for supporting the deployment of high speed wireless personal communication services in urban areas through the interconnection of base stations via metropolitan area networks (MANs) is proposed. Broadband MANs minimize traffic congestion by dynamic sharing of link capacity and by serving as distributed switches for partitioning call control functions. While the DQDB protocol readily supports distributed packet-switching over the IEEE 802.6 MAN, isochronous traffic such as voice and video is best supported by circuit-switched connections. The authors present an enhanced bi-state pre-arbitrated (PA) transport mechanism, and associated call control and handoff management techniques, which enable distributed circuit-switching over the MAN. These capabilities are not currently addressed in the 802.6 standards. The bi-state PA transport mechanism facilitates statistical multiplexing of variable rate isochronous traffic sources. The network capacity is constrained by the call setup delay performance, and is analyzed by simulations. Alternative signaling architectures, involving different placements of call control network elements, are evaluated. The effects of erasure nodes, and close bus versus open bus architectures, are considered. The overlap inter-MAN call setup procedure is proposed to reduce delays. Different call handoff procedures are formulated according to the type of handoff and the resulting change in call connectivity. Most handoffs are intra-MAN, requiring simple procedures with short delays     

一种低压低功耗SRAM/SOI单元设计

提出一种改进4管自体偏压结构SRAM/SOI单元.基于TSUPREM4和MEDICI软件的模拟和结构性能的分析,设计单元结构并选取结构参数.该结构采用nMOS栅下的含p+埋沟的衬底体电阻代替传统6管CMOSSRAM单元中的pMOS元件,具有面积小、工艺简单的优点.该结构可以在0.5V的电源电压下正常工作,与6管单元相比,该单元瞬态响应正常,功耗只有6管单元的1/10,满足低压低功耗的要求.     

两种自主开发的图形外延SiGe工艺

使用清华大学微电子学研究所研发的UHV/CVD系统深入研究了图形外延SiGe工艺,分别选用单一的SiO2介质层和SiO2/P0ly-Si复合介质层,作为图形外延SiGe单晶材料的窗口屏蔽介质,开发出了不同的实用化图形外延SiGe工艺.     

Reliability of Au bump––Cu direct interconnections fabricated by means of surface activated bonding method

As a room temperature bonding method, surface activated bonding (SAB) method has been introduced to be one of the most appropriate interconnection methods for the next generation of electronic packaging. Thus it is important to study the reliability of SAB interconnection in long term life test.In this paper, interconnections of Au bump and Cu film bonded by SAB method were performed in high temperature thermal aging test. Degradation of properties such as electrical resistance, shear strength of bump and interface microstructure during aging process were studied to investigate the failure mechanism of the interconnection. Intermetallic compound Cu₃Au was found formed at the interface during thermal aging, and it causes evolvement of the properties and failure mode of the interconnection changing in shear test. Results reveal that SAB is suitable for the interconnection between Au bump and Cu film and it is reliable in thermal reliability test.