全文获取类型
收费全文 | 515198篇 |
免费 | 8321篇 |
国内免费 | 3535篇 |
专业分类
化学 | 245029篇 |
晶体学 | 6674篇 |
力学 | 19585篇 |
综合类 | 85篇 |
数学 | 51455篇 |
物理学 | 138668篇 |
无线电 | 65558篇 |
出版年
2021年 | 4917篇 |
2020年 | 5406篇 |
2019年 | 5744篇 |
2018年 | 7081篇 |
2017年 | 6849篇 |
2016年 | 10396篇 |
2015年 | 6799篇 |
2014年 | 10477篇 |
2013年 | 22936篇 |
2012年 | 18101篇 |
2011年 | 21999篇 |
2010年 | 15851篇 |
2009年 | 16353篇 |
2008年 | 21265篇 |
2007年 | 21528篇 |
2006年 | 20054篇 |
2005年 | 18221篇 |
2004年 | 16751篇 |
2003年 | 14985篇 |
2002年 | 14589篇 |
2001年 | 16223篇 |
2000年 | 12789篇 |
1999年 | 10395篇 |
1998年 | 8916篇 |
1997年 | 8549篇 |
1996年 | 8201篇 |
1995年 | 7428篇 |
1994年 | 7344篇 |
1993年 | 6913篇 |
1992年 | 7536篇 |
1991年 | 7595篇 |
1990年 | 7222篇 |
1989年 | 6879篇 |
1988年 | 6676篇 |
1987年 | 6042篇 |
1986年 | 5691篇 |
1985年 | 7224篇 |
1984年 | 7293篇 |
1983年 | 5832篇 |
1982年 | 5828篇 |
1981年 | 5803篇 |
1980年 | 5358篇 |
1979年 | 5667篇 |
1978年 | 5790篇 |
1977年 | 5681篇 |
1976年 | 5575篇 |
1975年 | 5148篇 |
1974年 | 5116篇 |
1973年 | 5123篇 |
1972年 | 3627篇 |
排序方式: 共有10000条查询结果,搜索用时 0 毫秒
111.
A beam propagation method (BPM) based on the finite element method (FEM) is described for longitudinally varying three-dimensional (3-D) optical waveguides. In order to avoid nonphysical reflections from the computational window edges, the transparent boundary condition is introduced. The present algorithm using the Pade approximation is, to our knowledge, the first wide-angle finite element beam propagation method for 3-D waveguide structures. To show the validity and usefulness of this approach, numerical results are shown for Gaussian-beam excitation of a straight rib waveguide and guided-mode propagation in a Y-branching rib waveguide 相似文献
112.
Neviani A. Meneghesso G. Zanoni E. Hafizi M. Canali C. 《Electron Device Letters, IEEE》1997,18(12):619-621
Impact ionization is a major limiting factor to the maximum operating voltage of InGaAs-based, high-speed transistors. In this work, data on the positive temperature dependence of the electron impact ionization coefficient αn in In0.53Ga0.47As at medium-low electric fields are reported for the first time. The increase of αn with temperature is opposite to the behavior normally observed in most semiconductors. This anomalous behavior implies the onset of a positive feedback between power dissipation and avalanche generation which may adversely affect the power handling capability of In0.53Ga 0.47As-based devices, and which should be taken into account in device thermal modeling. In the experimental procedure, based on the measurement of the multiplication factor M-1 in npn In0.53Ga 0.47As/InP Heterojunction Bipolar Transistors (HBT), particular care has been taken in order to rule out possible spurious, temperature-dependent contributions to the measured multiplication current 相似文献
113.
Douay M. Xie W.X. Taunay T. Bernage P. Niay P. Cordier P. Poumellec B. Dong L. Bayon J.F. Poignant H. Delevaque E. 《Lightwave Technology, Journal of》1997,15(8):1329-1342
A comprehensive survey of photosensitivity in silica glasses and optical fiber is reviewed. Recent work on understanding the mechanisms contributing to germanium or aluminum doped fiber photosensitivity is discussed within the framework of photoelastic densification models 相似文献
114.
Watanabe H. Komori J. Higashitani K. Sekine M. Koyama H. 《Semiconductor Manufacturing, IEEE Transactions on》1997,10(2):228-232
A novel monitoring method for plasma-charging damage is proposed. This method performs a quick and accurate evaluation using antenna PMOSFET. It was found that not only hot-carrier (HC) lifetime but transistor parameters such as initial gate current and substrate current were changed according to the degree of plasma-charging damage. However, the present work suggests that monitoring the shift of drain current after a few seconds of HC stress is a more accurate method to indicate plasma-charging damage. The monitoring method using the present test structure is demonstrated to be useful for realizing highly reliable devices 相似文献
115.
C.H. Chu C.I. Hung Y.H. Wang M.P. Houng 《Photonics Technology Letters, IEEE》1997,9(9):1262-1264
We present a theoretical model for the dark current of bound-to-continuum quantum-well infrared photodetectors (QWIPs), by considering the field-induced mixing effect, tunneling rate and phonon scattering rate between bound and continuum states. Using this model, we can see clearly how these mechanisms significantly influence the Fermi levels of bound and continuum electrons, and thus, the dark current. Nonlinear temperature dependence of the dark current at low temperature is predicted and discussed in detail. The simulated dark currents exhibit good agreement with the experimental results, without use of parameter fitting techniques. 相似文献
116.
Sadka A.H. Eryurthlu F. Kondoz A.M. 《Vision, Image and Signal Processing, IEE Proceedings -》1997,144(6):369-376
An algorithm is presented to enhance the resilience of block-based video-coding algorithms against channel errors. The error-resilience algorithm described suggests the use of fixed length coding to alleviate the effect of Huffman coding on the synchronisation of the decode under erroneous conditions. The proposed mechanism modifies the order of transmission of the fixed-length video parameters to increase the chance of their arrival. Synchronisation words are sent at fixed-length intervals within the bit stream to reduce the possibility of the decoder falling on similar bit patterns within the bit stream. To limit the effect of error accumulation, the motion prediction process is halted and the differential coding of motion vectors is not applied. FEC techniques are applied on some error-sensitive segments of the reordered video bitstream. The effectiveness of the proposed error-resilience algorithm is evidenced by both subjective and objective results 相似文献
117.
J.P.R. Lacey S.J. Madden M.A. Summerfield 《Photonics Technology Letters, IEEE》1997,9(10):1355-1357
Multichannel wavelength converters may be important components in the cross-connects in future wavelength-division multiplexed (WDM) transport networks. We demonstrate a multichannel, polarization-insensitive, optically transparent wavelength converter, based on four-wave mixing in two semiconductor optical amplifiers in a polarization-diversity arrangement. Bit-error-rate (BER) measurements with four input 2.5-Gb/s WDM channels, spaced by 2 nm, show penalties for wavelength conversion less than 2.6 dB at 10/sup -9/ BER. Changes in the state of polarization of the input signals cause the output power to change by less than 1.2 dB, and the corresponding power penalties change by less than 0.9 dB. 相似文献
118.
Wavelength selection for low-saturation pulse oximetry 总被引:1,自引:0,他引:1
Mannheimer P.D. Cascini J.R. Fein M.E. Nierlich S.L. 《IEEE transactions on bio-medical engineering》1997,44(3):148-158
Conventional pulse oximeters are accurate at high oxygen saturation under a variety of physiological conditions but show worsening accuracy at lower saturation (below 70%). Numerical modeling suggests that sensors fabricated with 735 and 890 nm emitters should read more accurately at low saturation under a variety of conditions than sensors made with conventionally used 660 and 900 nm band emitters. Recent animal testing confirms this expectation. It is postulated that the most repeatable and stable accuracy of the pulse oximeter occurs when the fractional change in photon path lengths due to perturbations in the tissue (relative to the conditions present during system calibration) is equivalent at the two wavelengths. Additionally, the penetration depth (and/or breadth) of the probing light needs to be well matched at the two wavelengths in order to minimize the effects of tissue heterogeneity. At high saturation these conditions are optimally met with 660 and 900 nm band emitters, while at low saturation 735 and 890 nm provide better performance 相似文献
119.
120.
Cresswell M.W. Allen R.A. Guthrie W.F. Sniegowski J.J. Ghoshtagore R.N. Linholm L.W. 《Semiconductor Manufacturing, IEEE Transactions on》1998,11(2):182-193
The physical widths of reference features incorporated into electrical linewidth test structures patterned in films of monocrystalline silicon have been determined from Kelvin voltage measurements. The films in which the test structures are patterned are electrically insulated from the bulk-silicon substrate by a layer of silicon dioxide provided by SIMOX (Separation by the IMplantation of OXygen) processing. The motivation is to facilitate the development of linewidth reference materials for critical-dimension (CD) metrology-instrument calibration. The selection of the (110) orientation of the starting silicon and the orientation of the structures' features relative to the crystal lattice enable a lattice-plane-selective etch to generate reference-feature properties of rectangular cross section and atomically planar sidewalls. These properties are highly desirable for CD applications in which feature widths are certified with nanometer-level uncertainty for use by a diverse range of CD instruments. End applications include the development and calibration of new generations of CD instruments directed at controlling processes for manufacturing devices having sub-quarter-micrometer features 相似文献