A method for calculating the parameters of formation of vacancies in crystals formed by spherically symmetrical atoms was developed. Both quantum effects at low temperatures and the possibility of the delocalization of atoms at high temperatures were studied. The parameters of formation of vacancies in carbon subgroup element crystals C-diam, Si, Ge, α-Sn, and Pb were calculated. The inclusion of the delocalization of atoms was shown to increase the enthalpy, entropy, and volume of vacancy formation. At low temperatures, the parameters of vacancy formation were found to depend strongly on the temperature, and the entropy of vacancy formation became negative. At high temperatures, close agreement with experimental data and theoretical estimates reported by other authors was obtained. The temperature dependence of vacancy parameters was studied for diamond heated isobarically from 100 to 4500 K. The applicability scope of the Arrhenius equation with a temperature-independent activation energy is discussed. The validity of the “compensation rule” (correlation between the entropy and enthalpy of vacancy formation) was demonstrated. It was also shown that the volume and entropy of vacancy formation were correlated over the whole temperature range studied.
It is well known that F. G. Tricomi (1923) is the originator of the theoryof boundary value problems for mixed type equations by establishing the Thicomi equation: y·uxx+uyy=0 which is hyperbolic for y < 0, elliptic for y=0. and parabolic for y= 0 and then applied it in the theory of transonic flows.Then A.V.Bitsadze together with M. A . Lavrent′ev (1950) established the Bitsadze Lavre nt′ev equation: sgn( y ) ·uxx+uyy=0 where sgn(y) = 1 for y > 0, = -1 for y<0, 0 for y=0 with the discontinuous coefficient sgn( y ) of uxx, while in the case of Tricomi equation the corre sponding coefficient y is continuous. In this paper we establish the mixed Bitsadze Lavrent′ev Tricomi equation. Lu=K(y)·uxx+sgn(x) ·uyy+r(x,y)·u=f(x,y), where the coefficient K=K(y) of uxx is increasing continuous and coefficient M=sgn(x) of uyy discontinuous, r=r(x,y) is once continuously differentiable, f=f(x,y) continuous. Finally we prove the uniqueness of quasi regular solutions and observe that these new results can bbe applied in fluid dynamics. 相似文献
This paper describes an approach to design ESD protection for integrated low noise amplifier (LNA) circuits used in narrowband transceiver front-ends. The RF constraints on the implementation of ESD protection devices are relaxed by co-designing the RF and the ESD blocks, considering them as one single circuit to optimise. The method is applied for the design of 0.25 μm CMOS LNA. Circuit protection levels higher than 3 kV HBM stress are achieved using conventional highly capacitive ggNMOS snapback devices. The methodology can be extended to other RF-CMOS circuits requiring ESD protection by merging the ESD devices in the functionality of the corresponding matching blocks. 相似文献
The diversity of products in the reaction of diethyl azodicarboxylate (DEAD)/diisopropyl azodicarboxylate (DIAD) and activated
acetylenes with PIII compounds bearing oxygen or nitrogen substituents is discussed. New findings that are useful in understanding the nature
of intermediates involved in the Mitsunobu reaction are highlighted. X-ray structures of two new compounds (2-t-Bu-4-MeC6H3O)P (μ-N-t-Bu)2P+[(NH-t-Bu)N[(CO2]-i-Pr)(HNCO2-i-Pr)]](Cl-)(2-t-Bu-4-MeC6H3OH)(23)and [CH2(6-t-Bu-4-Me-C6H2O)2P(O)C(CO2Me)C-(CO2Me)CClNC(O)Cl] (33) are also reported. The structure of23 is close to one of the intermediates proposed in the Mitsunobu reaction. 相似文献
Considering the importance of the X-ray production cross sections for the determination of the element concentrations in a
given material, we have measured them experimentally for Al Si, Sc, Ti, V, Fe, Co, Ni and Cu bombarded by protons with energies
ranging from 40 to 180 keV.
This revised version was published online in July 2006 with corrections to the Cover Date. 相似文献
A high-gain ballistic hot-electron device is described. The GaAs-AlGaAs heterostructure device, with a 21-mm-thick pseudomorphic In 0.12Ga0.88As base, had a current gain of 27 at 77 K and 41 at 4.2 K. As characteristically seen in ballistic devices, transfer into the L valley limited the maximum gain. The Γ-L valley separation in the strained In0.12Ga0.88As was estimated to be about 380 meV 相似文献
This paper presents our approach to extend the niche of behavior-based robotics toward manipulation. We use results from neuroscience to derive some qualitative design rules for the mechanics of the manipulator, resulting in a next-generation manipulator, the "soft arm". By defining the basic behaviors of the manipulator as trajectory-producing behaviors (which is also biologically plausible), we have designed a first test case: writing on a board with a mobile manipulator. The soft arm has not yet been developed; therefore, we have emulated such a soft robot arm on an industrial robot. 相似文献
This paper investigates how time delays and capacitances observed under small-signal conditions can be consistently accounted for in heterojunction bipolar transistor (HBT) large-signal models. The approach starts at the circuit level by mapping the large-signal equivalent circuit (which consists of charge and current sources) to the well-known small-signal circuit (which consists of capacitances, transit-time, and resistances). It is shown that and how bias dependent charge sources at either pn-junction impact transit-time, base-collector capacitance, and their mutual dependence. It is demonstrated for the example of a GaAs-based HBT that the interrelation of the elements is observed in measurements as predicted. The results of the investigation enhance understanding of HBT model characteristics and provide a criterion to check model consistency. 相似文献