Calculation of the vortex pinning energy in a long periodically modulated Josephson contact

An analytical method for evaluating the Josephson and magnetic energies of a vortex, as well as the vortex pinning energy and its components, in a long periodically modulated Josephson contact is suggested. The method allows one to take into account the variation of the vortex shape with the position of the vortex. The results obtained with this method are much closer to those of exact computer analysis compared with results of the conventional techniques. The discrepancy between the exact shape of the vortex and a function obtained by solving a differential equation approximating the exact difference equation is studied.     

Electron Metal-Dielectric Phase Transitions in Semiconductors under Pressure

The effect of uniform pressure on the character of metal-dielectric transitions in compensated weakly- and highly doped semiconductors (WHDCS) is considered. The influence of hybridization of resonance quasilocalized impurity states with band continuum states on the transition is shown. Minimum metallic conductivities in p-CdSnAs₂ are determined for Mott and Anderson transitions. Special features of the metal-dielectric transformation in weakly-doped narrow- and high energy-gap semiconductors are discussed for the case of hydrogen-like impurities. Anderson localization in WHDCS is also considered. Phase diagrams are presented.     

Isotopic effect in the width of a giant dipole resonance in light nuclei

An isotopic effect in the widths of giant dipole resonances is established on the basis of an analysis of the latest systematics of photoabsorption cross sections for nuclei containing 12 to 65 nucleons. This effect arises owing to isospin splitting of a giant resonance and is enhanced by its configuration splitting.     

Hysteretic galvano-mechanical effect on charging and discharging ionistor structures

The size of an ionistor capacitor structure is found to change during its charging and discharging. The specific feature of this effect that distinguishes it from other known effects of changing sizes under electric and magnetic fields (the piezoelectric effect and striction) is the complete hysteresis; i.e., the size reached under the exposure remains unchanged after the field is turned off.     

Stability of the mechanical behavior of an arched TiNi strip under the conditions of the constrained shape memory effect

Unstable form changing (click) of an arched TiNi strip annealed at 773 K is investigated. After the annealing, the strip is placed into the grips of a deforming machine and is transferred to the martensitic state by bending in the direction opposite to its initial bend. Subsequent heating of the strip, which carries it to the austenitic state, is accompanied by a click under the conditions of constrained form changing. Analysis of the martensitic deformation in terms of the theory of diffuse martensitic transformations makes it possible to establish the conditions under which the form changing process becomes unstable.     

Physical processes underlying the development of shear turbulence

A physical model of the development of turbulence in free shear flows is proposed. The model is based on the results of numerical simulations of turbulent flow development. The main ideas of the proposed theory of turbulence are stated as follows: the onset of turbulence begins with the formation of large vortices; spectral energy transfer involves both direct and inverse cascades; and the inertial range of the energy spectrum develops as a result of concurrent direct and inverse cascades. The dominant physical factors that determine the spectrum include Joukowski forces.     

Switching Device Based on a Thin Film of an Azo-Containing Polymer for Application in Memory Cells

Results obtained on a conductive multilevel device realized with a 100 nm azo-polymer film are reported. The capability to switch between three different conductance states makes the device versatile both for Write Once Read Many and Write Many Read Many memory cell application. The analysis of the - curves indicates that the hysteretic conductance change with the external voltage can be explained in terms of different hopping distances existing between the nearest neighbors intervening in the two conformational states of the molecular structure.