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981.
982.
A two-dimensional problem of scattering of pulsed beams having arbitrary time and spatial form on a plane surface of a lossy dielectric halfspace is solved. A pulsed beam has been modeled by letting an E- or H-polarized plane pulse with homogeneous front pass through a space filter. The reflected pulse is found using an expansion of the incident pulsed beam over time-harmonic plane waves.  相似文献   
983.
We present Miura transformations for the continuous and several discrete Painlev\'e I equations. In the case of the continuous PI, we use the Hamiltonian formulation of the Painlev\'e equations and show that there exists a Miura transformation between PI and the binomial, second degree, equation of Cosgrove SDV. In the case of the discrete PI's we obtain two different kinds of Miuras. One kind relates a d-PI to some other d-PI while the other leads to discrete four-point equations which are the discrete analogs of the derivative of Cosgrove's equation SDV.  相似文献   
984.
Received: 21 May 1997/Accepted: 4 July 1997  相似文献   
985.
Megson  G.M. Diemoz  E. 《Electronics letters》1997,33(17):1435-1437
A systolic array capable of outperforming a table look-up quantiser is proposed. The design has high throughput, can perform uniform or non-uniform quantisation and is suitable for VLSI or field programmable gate array (FPGA) implementation. In the latter case, the array can be used dynamically to both reduce latency and switch between quantisers without the need to reset look-up tables  相似文献   
986.
The pulsed and CW laser performance of a range of titanium sapphire laser crystals is reported. Titanium ion concentration in the crystals ranged from 0.07 at.% to 0.25 and 0.41 at.% for some recently developed heavily doped crystals. Values of the crystal figure of merit lay between 30 and 220. Threshold, slope efficiency, tunability, and temporal response are assessed. Comparisons are made with the predictions of a simple rate equation model  相似文献   
987.
We consider a pseudoparabolic variational inequality in a cylindrical domain semibounded in a variable t. Under certain conditions imposed on the coefficients of the inequality, we prove theorems on the unique existence of a solution for a class of functions with exponential growth as t → ∞. Translated from Ukrainskii Matematicheskii Zhurnal, Vol. 50, No. 7, pp. 919–929, July, 1998.  相似文献   
988.
Films of nonuniform Cu100−xCox alloys with x = 6, 11, 20, and 35 at. %, obtained by electrolytic deposition, are investigated using quantum magnetometry in fields of up to 5.5 T and temperatures of 2–300 K. In all the compositions a characteristic feature is the deviation from pure superparamagnetic behavior, which increases as the annealing of the films and their cobalt content increase. Institute of Solid State and Semiconductor Physics. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 60–62, March, 1998.  相似文献   
989.
An investigation was made of the process of Raman scattering of polarized electromagnetic radiation by turbulent fluctuations in a plasma with a magnetic field. It was found that a turbulent plasma with a magnetic field scatters left- and right-handed circularly polarized radiation in different ways. The possibility is analyzed of using the results obtained in order to provide diagnostics for different plasma characteristics in thermonuclear fusion devices employing magnetic plasma confinement. Institute of Solar and Terrestrial Physics, Siberian Branch of the Russian Academy of Sciences. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 102–107, April, 1998.  相似文献   
990.
Results are presented for experimental studies of the static current-voltage characteristics of tunneling MIS diodes based on n-type gallium arsenide. It is shown that the forward branch of the current-voltage characteristics can be used to determine the dependence of the surface potential at the dielectric-semiconductor interface on the voltage and the distribution of the surface state density over energy in the forbidden band. The results of studies of these dependences for diodes prepared by thermal annealing at various temperatures are given. The possible causes of changes in the forward and reverse current, and the dependence of the surface potential on the voltage and distribution of surface state density in energy under the action on the diodes of a gaseous mixture containing hydrogen are analyzed. V. D. Kuznetsov Siberian Physicotechnical Institute at Tomsk State University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 69–83, January, 1998.  相似文献   
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