首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   1574398篇
  免费   32189篇
  国内免费   8412篇
化学   695832篇
晶体学   20474篇
力学   75669篇
综合类   106篇
数学   244274篇
物理学   380607篇
无线电   198037篇
  2021年   14865篇
  2020年   17452篇
  2019年   17592篇
  2018年   15155篇
  2016年   30548篇
  2015年   22009篇
  2014年   32919篇
  2013年   78839篇
  2012年   42620篇
  2011年   41665篇
  2010年   41465篇
  2009年   45890篇
  2008年   44044篇
  2007年   41615篇
  2006年   46591篇
  2005年   39465篇
  2004年   40047篇
  2003年   37249篇
  2002年   37833篇
  2001年   37833篇
  2000年   32958篇
  1999年   29621篇
  1998年   27704篇
  1997年   27474篇
  1996年   27014篇
  1995年   24773篇
  1994年   24264篇
  1993年   23674篇
  1992年   23718篇
  1991年   23843篇
  1990年   22646篇
  1989年   22258篇
  1988年   21459篇
  1987年   20158篇
  1986年   18997篇
  1985年   25463篇
  1984年   26499篇
  1983年   22377篇
  1982年   23744篇
  1981年   22939篇
  1980年   22183篇
  1979年   22199篇
  1978年   23370篇
  1977年   22950篇
  1976年   22554篇
  1975年   21238篇
  1974年   20869篇
  1973年   21325篇
  1972年   15527篇
  1967年   13327篇
排序方式: 共有10000条查询结果,搜索用时 0 毫秒
951.
New bounds are proposed for the Marcum Q-function, which is defined by an integral expression where the 0th-order modified Bessel function appears. The proposed bounds are derived by suitable approximations of the 0th-order modified Bessel function in the integration region of the Marcum Q-function. They prove to be very tight and outperform bounds previously proposed in the literature. In particular, the proposed bounds are noticeably good for large values of the parameters of the Marcum Q-function, where previously introduced bounds fail and where exact computation of the function becomes critical due to numerical problems  相似文献   
952.
A 640-Gb/s high-speed ATM switching system that is based on the technologies of advanced MCM-C, 0.25-μm CMOS, and optical wavelength-division-multiplexing (WDM) interconnection is fabricated for future broadband backbone networks. A 40-layer, 160×114 mm ceramic MCM forms the basic ATM switch module with 80-Gb/s throughput. It consists of 8 advanced 0.25-μm CMOS LSIs and 32 I/O bipolar LSIs. The MCM has a 7-layer high-speed signal line structure having 50-Ω strip lines, high-speed signal lines, and 33 power supply layers formed using 50-μm thick ceramic layers to achieve high capacity. A uniquely structured closed-loop-type liquid cooling system for the MCM is used to cope with its high power dissipation of 230 W. A three-stage ATM switch is made using the optical WDM interconnection between high-performance MCMs. For WDM interconnection, newly developed compact 10-Gb/s, 8-WDM optical transmitter and receiver modules are used. These modules are each only 80×120×20 mm and dissipate 9.65 W and 22.5 W, respectively. They have a special chassis for cooling, which contains high-performance heat-conductive plates and micro-fans. An optical WDM router based on an arrayed waveguide router is used for mesh interconnection of boards. The optical WDM interconnect has 640-Gb/s throughput and simple interconnection  相似文献   
953.
A new hybrid active power filter (APF) topology   总被引:12,自引:0,他引:12  
In this paper, a new hybrid active power filter topology is presented. A higher-voltage, low-switching frequency insulated gate bipolar transistor (IGBT) inverter and a lower-voltage high-switching frequency metal oxide semiconductor field effect transistor (MOSFET) inverter are used in combination to achieve harmonic current compensation. The function of the IGBT inverter is to support utility fundamental voltage and to compensate for the fundamental reactive power. The MOSFET inverter fulfills the function of harmonic current compensation. To further reduce cost and to simplify control, the IGBT and MOSFET inverters share the same DC-link via a split capacitor bank. With this approach harmonics can be cancelled over a wide frequency range. Compared to the conventional APF topology, the proposed approach employs lower dc-link voltage and generates less noise. Simulation and experimental results show that the proposed active power filter topology is capable of compensating for the load harmonics  相似文献   
954.
Reliability of thermomechanical simulations is critically linked to the accuracy of the mechanical properties that govern the behaviour of structure, like Young's modulus (E) and coefficient of thermal expansion (CTE). For many cases, the values found in literatures are dealing with bulk properties without detailed information on temperature effects. To address such issues, it is necessary to measure the materials parameters as a function of temperature. The measurement of CTE is usually accomplished by evaluating the thermal deflections of a subjected material layer deposited on a substrate, providing that E is known at a specific temperature of experiment. A bilayer method, based on theory of elasticity, is proposed to determine both E and CTE for a given temperature with a good resolution. This paper presents the theoretical analysis, the design and process of the microsystem test structures, and the main calculation results.  相似文献   
955.
The microhardness and content of carbon in electroplated gold coatings were studied as influenced by the operation time of citrate and citrate-phosphate gold-plating electrolytes. Such physicomechanical properties as porosity, microhardness, internal stress, plasticity, and microstructure of electroless-plated and electroplated nickel coatings were studied and analyzed.  相似文献   
956.
This paper analyzes probability of bit-error (Pe) performance of asynchronous bandlimited direct-sequence code-division multiple-access systems with binary phase-shift keying spreading. The two present methods of Pe analysis under bandwidth-efficient pulse shaping: the often-cited standard Gaussian approximation and the characteristic function (CF) method suffer from either a low accuracy in regions of low Pe (< 10-3) or a prohibitively large computational complexity. The paper presents an alternate method of Pe analysis with moderate computational complexity and high accuracy based on a key observation. A sequence of chip decision statistics (whose sum yields a bit statistic) forms a stationary, m-dependent sequence when conditioned on the chip delay and phase offset of each interfering signal. This observation permits the generalization of the improved Gaussian approximation previously derived for the rectangular pulse and the derivation of a numerically efficient approximation based on the CF method. Numerical examples of systems using the square-root raised-cosine and IS-95 pulses illustrate THE P e performance, user capacity and the accuracy of the proposed method  相似文献   
957.
The radiation emitted by charged, scalar particles in a Schwarzschild field with maximal acceleration corrections is calculated classically and in the tree approximation of quantum field theory. In both instances the particles emit radiation that has characteristics similar to those of gamma-ray bursters.  相似文献   
958.
Surface relief formation at holographic recording on amorphous selenium films was demonstrated and investigated. The presence of this optical phase modulation component is essential for ensuring significant, stable and erasable optical recording in a-Se films at 290–320 K temperatures, where conventional photodarkening was known as insignificant and unstable. Photocrystallization can only be observed in super-exposed a-Se films at the given experimental conditions of hologram recording. Erasing behavior of surface relief gratings under heat treatment was also investigated in order to reveal further details of the mechanism. Photoinduced structural transformations within the amorphous phase, connected to local ordering under the condition of light-induced fluidity, are proposed as an explanation for the relief formation and erasing. The observed reversible optical recording process may be useful for the various optoelectronic applications of photoconductive a-Se layers. Received: 12 June 2000 / Accepted: 6 June 2001 / Published online: 30 August 2001  相似文献   
959.
This paper reports on the first experimental observation of quantum-well states and sp-type resonances in thin single-crystal gold, silver, and copper layers formed on single-crystal W(110) surfaces, which result from spatial localization of Bloch-type electronic wave functions in a quantum well with potential barriers at the vacuum/metal and metal/W(110) interfaces. The quantization of the valence-band electronic structure in Au/W(110), Ag/W(110), and Cu/W(110) systems was studied experimentally using angle-resolved photoelectron spectroscopy.  相似文献   
960.
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号