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31.
Presents the Satellite Communications Network Expert (SaNE), a knowledge-based aid designed to provide engineering support for fault diagnosis. The SaNE is composed of two elements: a satcom network model, which simulates the structure and functionality of a system based loosely upon a large military satcom network, and a diagnostic component, which uses knowledge- and model-based reasoning techniques to analyse system anomalies and diagnose possible causes for the alarms such networks generate. The development cycle is described, emphasising lessons learnt during development and testing and the advantages and disadvantages of the techniques applied. The goal of the SaNE project is primarily commercial acceptance rather than innovation. The authors illustrate how novel concepts can be implemented in a practical system without compromising this goal  相似文献   
32.
Storage performance-metrics and benchmarks   总被引:2,自引:0,他引:2  
The metrics and benchmarks used in storage performance evaluation are discussed. The technology trends taking place in storage systems, such as disk and tape evolution, disk arrays, and solid-state disks, are highlighted. The current popular I/O benchmarks are then described, reviewed, and run on three systems: a DECstation 5000/200 running the Sprite Operating System, a SPARCstation 1+ running SunOS, and an HP Series 700 (Model 730) running HP-UX. Two approaches to storage benchmarks-LADDIS and a self-scaling benchmark with predicted performance-are also described  相似文献   
33.
Wavelength conversion of optical signals over 20 nm is demonstrated using highly nondegenerate four-wave mixing in a semiconductor traveling-wave optical amplifier. This technique has the potential for extremely-high-speed operation and allows continuous tuning of both input and output wavelengths over the amplifier gain bandwidth. It is demonstrated that, even for such a large wavelength conversion range, it is possible to obtain conversion efficiencies in excess of -10 dB and high extinction ratios. The feasibility of the technique is demonstrated by system measurements at 622 Mb/s, showing a 1.1-dB power penalty at 10-9 bit error rate (BER)  相似文献   
34.
A low threshold current density of ~100 A/cm2 has been obtained at 1.55 μm using a graded-index separate-confinement-heterostructure strained InGaAsP single-quantum-well laser. The design of the laser structure is based on results calculated from the viewpoint of effective carrier injection into the well  相似文献   
35.
The theory of interaction of charged particle beams with 2D electron gas, located in the field of the delta-like potential wallU(y) =U oδ(y) has been developed. The kinetic equation for plasmons in 2D electron gas was obtained; the conditions of arising of their instability are given and the corresponding expressions for the increment of plasmons are found.  相似文献   
36.
In this paper, a physics-based mismatch model is presented. It is demonstrated on a 0.18-/spl mu/m technology that a simple mismatch model can still be used to characterize deep-submicron technologies. The accuracy of the model is examined and found to be within 20% in the strong inversion region. Bulk bias dependence is modeled in a physical way. To extract the mismatch parameters, a weighted fit is introduced. It is shown that the width and length dependence of the mismatch parameters is given by the Pelgrom model.  相似文献   
37.
This paper presents a new self-routing packet network called the plane interconnected parallel network (PIPN). In the proposed design, the traffic arriving at the network is shaped and routed through two banyan network based interconnected planes. The interconnections between the planes distribute the incoming load more homogeneously over the network. The throughput of the network under uniform and heterogeneous traffic requirements is studied analytically and by simulation. The results are compared with the results of the baseline network and another banyan network based parallel interconnection network. It is shown that, for the proposed design, a higher degree of heterogeneity results in better performance  相似文献   
38.
Reliable multicast protocols suffer from the problem of feedback implosion. To avoid this problem, the number of receivers sending feedback in case of loss must be small. However, losses experienced by different receivers are strongly correlated, since receivers share common resources in the multicast tree. One approach to feedback implosion avoidance relies on delaying feedback at the receivers. We present deterministic timeouts for reliable multicast (DTRM), a distributed algorithm to compute optimal deterministic timeouts for each receiver in a multicast tree as a function of the tree topology and the sender-to-receiver round-trip delays. DTRM has several desirable properties. First, feedback implosion is provably avoided for a single loss anywhere in the tree, provided delay jitter is bounded. Second, the computation of the timeouts can be entirely distributed; receivers and intermediate nodes only rely on local topology information. Third, the timeouts computed by DTRM are optimal with respect to the maximum response time  相似文献   
39.
A beam propagation method (BPM) based on the finite element method (FEM) is described for longitudinally varying three-dimensional (3-D) optical waveguides. In order to avoid nonphysical reflections from the computational window edges, the transparent boundary condition is introduced. The present algorithm using the Pade approximation is, to our knowledge, the first wide-angle finite element beam propagation method for 3-D waveguide structures. To show the validity and usefulness of this approach, numerical results are shown for Gaussian-beam excitation of a straight rib waveguide and guided-mode propagation in a Y-branching rib waveguide  相似文献   
40.
Impact ionization is a major limiting factor to the maximum operating voltage of InGaAs-based, high-speed transistors. In this work, data on the positive temperature dependence of the electron impact ionization coefficient αn in In0.53Ga0.47As at medium-low electric fields are reported for the first time. The increase of αn with temperature is opposite to the behavior normally observed in most semiconductors. This anomalous behavior implies the onset of a positive feedback between power dissipation and avalanche generation which may adversely affect the power handling capability of In0.53Ga 0.47As-based devices, and which should be taken into account in device thermal modeling. In the experimental procedure, based on the measurement of the multiplication factor M-1 in npn In0.53Ga 0.47As/InP Heterojunction Bipolar Transistors (HBT), particular care has been taken in order to rule out possible spurious, temperature-dependent contributions to the measured multiplication current  相似文献   
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