A simple CMOS process compatible high performance parallel-stacked spiral inductor for advanced RF analog circuit applications

A high Q on-chip inductor with some unique structures has been fabricated with 0.13 μm CMOS compatible process for the first time. The unique structures including parallel stacked, line via between inter-metal layers, and use the top signal pad as the under path of the inductor instead of conventional bottom signal pad. These structures offer advantages of reducing resistance, high Q value, simple preparing process and small chip area. Experimental results show that the measured peak Q and peak-Q frequency can attain 7.06 and 1.8 GHz, respectively for the structure with four metal layers in parallel, 15 μm in metal width, 5.5 turns in wire number,and an area of 204×240 μm². The results have a better potential for advanced mobile communication applications.     

Formation of n-channel polycrystalline-Si thin-film transistors by using retrograde channel scheme with double implantation

Excellent n-channel poly-Si thin-film transistors (poly-Si TFTs) have been formed by using retrograde channel scheme with channel doping implantation and extra counter-doping implantation. As compared to the conventional sample with undoped channel layer, a much smaller leakage current can be achieved by boron-doping the poly-Si channel layer, due to a significantly reduced depletion region. However, the on-state characteristics are degraded. A retrograde channel scheme, implemented by further phosphorus counter-doping the surface of the boron-doped channel layer, is proposed for lowering the channel surface doping concentration without changing the bulk channel doping concentration. By using the retrograde channel scheme, an off-state leakage current as low as that for the normal channel-doping scheme may be achieved, while yielding excellent on-state I-V transfer characteristics.     

General theory for the ferroelectric polarization induced by spin-spiral order

The ferroelectric polarization of triangular-lattice antiferromagnets induced by helical spin-spiral order is not explained by any existing model of magnetic-order-driven ferroelectricity. We resolve this problem by developing a general theory for the ferroelectric polarization induced by spin-spiral order and then by evaluating the coefficients needed to specify the general theory on the basis of density functional calculations. Our theory correctly describes the ferroelectricity of triangular-lattice antiferromagnets driven by helical spin-spiral order and incorporates known models of magnetic-order-driven ferroelectricity as special cases.     

Continuous-time bilinear system identification using single experiment with multiple pulses

A novel method is presented for the identification of a continuous-time bilinear system from the input?Coutput data generated by a single experiment with multiple pulses. In contrast to the conventional approach utilizing multiple experiments, the current work documents the advantage of using a single experiment and sets up a procedure to obtain bilinear system models. The special pulse inputs employed by earlier research can be avoided and accurate identification of the continuous-time system model is possible by performing a single experiment incorporating a class of control input sequences combining pulses with free-decay response. The algorithm presented herein is more attractive in practice for the identification of bilinear systems. Numerical examples presented demonstrate the methodology developed in the paper.     

Effects of contact electrode size on the characteristics of polycrystalline-Si p-i-n solar cells

The effects of contact electrode size on the photo-voltaic characteristics of polycrystalline-Si p-i-n solar cells have been studied,with respect to a unit-cell pitch size of 1μm width.For the non-transparent Al contact electrode with a contact width of 0.05-0.2μm,the short-circuit current is obviously reduced with increasing contact width,due to a larger area of optical reflection by the electrode.On the other hand,even when using a transparent ITO(indium-tin-oxide) electrode,a larger width of contact e...     

Synthesis of a benzoxazine with precisely two phenolic OH linkages and the properties of its high‐performance copolymers

A phenolic OH‐containing benzoxazine ( F‐ap ), which cannot be directly synthesized from the condensation of bisphenol F, aminophenol, and formaldehyde by traditional procedures, has been successfully prepared in our alternative synthetic approach. F‐ap was prepared by three steps including (a) condensation of 4‐aminophenol and 5,5'‐methylenebis(2‐hydroxybenzaldehyde) (1) , (b) reduction of the resulting imine linkage by sodium borohydride, and (c) ring closure condensation by formaldehyde. The key starting material, (1) , was prepared from 2‐hydroxybenzaldehyde and s‐trioxane in the presence of sulfuric acid. F‐ap is structurally similar to bis(3,4‐dihydro‐2H‐3‐phenyl‐1,3‐benzoxazinyl)methane ( F‐a, a commercial benzoxazine based on bisphenol F/aniline/formaldehyde) except for two phenolic OHs. The phenolic OHs can provide reaction sites with epoxy and 1,1'‐(methylenedi‐p‐phenylene)bismaleimide (BMI). The structure–property relationships between the thermosets of F‐ap /epoxy, F‐a /epoxy, F‐ap /BMI, and F‐a /BMI were discussed. Experimental data showed that thermosets based on F‐ap /epoxy and F‐ap /BMI provided much better thermal properties than those based on F‐a /epoxy and F‐a /BMI. © 2013 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2013, 51, 2686–2694     

Suppression of boron penetration for p+ stacked poly-Sigates by using inductively coupled N2 plasma treatment

Nitridation of stacked poly-Si gates by inductively coupled N₂ plasma (ICNP) treatment has been shown to suppress boron penetration and improve gate oxide integrity. The ICNP treatments on the stacked poly-Si layers create nitrogen-rich layers not only between the stacked poly-Si layers but also in the gate oxide after post implant anneal, thus resulting in effective retardation of boron diffusion. In addition, positioning of ICNP treatment closer to gate oxides leads to higher nitrogen peaks in the gate oxide region, resulting in further suppression of boron penetration and improvement of gate oxide reliability     

A Compact Wideband CMOS Low-Noise Amplifier Using Shunt Resistive-Feedback and Series Inductive-Peaking Techniques

A wideband low-noise amplifier (LNA) with shunt resistive-feedback and series inductive-peaking is proposed for wideband input matching, broadband power gain and flat noise figure (NF) response. The proposed wideband LNA is implemented in 0.18-mum CMOS technology. Measured results show that power gain is greater than 10 dB and input return loss is below -10 dB from 2 to 11.5 GHz. The IIP3 is about +3 dBm, and the NF ranges from 3.1 to 4.1 dB over the band of interest. An excellent agreement between the simulated and measured results is found and attributed to less number of passive components needed in this circuit compared with previous designs. Besides, the ratio of figure-of- merit to chip size is as high as 190 (mW^-1 /mm² ) which is the best results among all previous reported CMOS-based wideband LNA.     

Validation of an improved location-based handover algorithm using GSM measurement data

When a mobile station moves, the path loss and shadow fading contribute to the large-scale variation in the received signal strength. The variation of signal strength caused by shadow fadings is a random process, and handover decision mechanisms based on measurements of signal strength induce the "ping-pong effect." This paper proposes an improved handover algorithm, based on the estimates of location and velocity of the mobile station, to suppress the ping-pong effect in cellular systems. A practical approach based on GSM measurement data is used to estimate the location and velocity of mobile station to identify the correlation among shadowing components. The impact of location errors on handover performance was examined, and the proposed handover algorithm was applied to a real GSM system in urban Taipei city. The results indicate that the number of unnecessary handover can be reduced 18-26 percent by the proposed approach compared to the conventional method, while the signal outage probability remains similar. Besides, the computational complexity of the proposed algorithm is low, and the algorithm does not use a database or lookup table.     

Hidden Markov models with first-order equalization for noisy speechrecognition

A particularly effective distortion measure that takes into account the norm shrinkage bias in the noisy cepstrum is considered. A first-order equalization mechanism, specifically aiming at avoiding the norm shrinkage problem, is incorporated in a hidden Markov model (HMM) framework to model the speech cepstral sequence. Such a modeling technique requires special care, as the formulation inevitably involves parameter estimation from a set of data with singular dispersion. Solutions to this HMM stochastic modeling problem are provided, and algorithms for estimating the necessary model parameters are given. It is experimentally shown that incorporation of the first-order mean equalization model makes the HMM-based speech recognizer robust to noise. With respect to a conventional HMM recognizer, this leads to an improvement in recognition performance which is equivalent to a gain of about 15-20 dB in signal-to-noise ratio