Synthesis and evaluation of in vitro bioactivity for polysubstituted N-arylpyrazole derivatives

New polysubstituted N-arylpyrazole derivatives were synthesized from N1-arylsydnone with acetylene and boronic acid, including 2-thiophenyl, 3-thiophenyl, 2-benzo[b]thiophenyl, or dibenzothiophenyl-4-boronic acid, via 1,3-dipolar cycloaddition and Suzuki coupling reaction. Based on the growth inhibitory activity results against lung carcinoma (NCI-H226), nasopharyngeal (NPC-TW01), and T-cell leukemia (Jurkat) cancer cells, compounds 5d and 7d with dibenzothiophenyl bioisostere possessed the significant inhibitory activity for NPC-TW01 (32 μM and 16 μM) and NCI-H226 (16 μM and 8.9 μM), respectively.     

A dedicated small‐angle X‐ray scattering beamline with a superconducting wiggler source at the NSRRC

At the National Synchrotron Radiation Research Center (NSRRC), which operates a 1.5 GeV storage ring, a dedicated small‐angle X‐ray scattering (SAXS) beamline has been installed with an in‐achromat superconducting wiggler insertion device of peak magnetic field 3.1 T. The vertical beam divergence from the X‐ray source is reduced significantly by a collimating mirror. Subsequently the beam is selectively monochromated by a double Si(111) crystal monochromator with high energy resolution (ΔE/E? 2 × 10^?4) in the energy range 5–23 keV, or by a double Mo/B₄C multilayer monochromator for 10–30 times higher flux (～10¹¹ photons s^?1) in the 6–15 keV range. These two monochromators are incorporated into one rotating cradle for fast exchange. The monochromated beam is focused by a toroidal mirror with 1:1 focusing for a small beam divergence and a beam size of ～0.9 mm × 0.3 mm (horizontal × vertical) at the focus point located 26.5 m from the radiation source. A plane mirror installed after the toroidal mirror is selectively used to deflect the beam downwards for grazing‐incidence SAXS (GISAXS) from liquid surfaces. Two online beam‐position monitors separated by 8 m provide an efficient feedback control for an overall beam‐position stability in the 10 µm range. The beam features measured, including the flux density, energy resolution, size and divergence, are consistent with those calculated using the ray‐tracing program SHADOW. With the deflectable beam of relatively high energy resolution and high flux, the new beamline meets the requirements for a wide range of SAXS applications, including anomalous SAXS for multiphase nanoparticles (e.g. semiconductor core‐shell quantum dots) and GISAXS from liquid surfaces.     

Abstract Riccati equations in an L1 space of finite measure and applications to transport theory

We consider operator-valued Riccati initial-value problems of the form R′(t) + TR(t) + R(t)T = TA(t) + TB(t)R(t) + R(t)TC(t) + R(t)TD(t)R(t), R(0) = R₀. Here A to D and R₀ have values as non-negative bounded linear operators in L¹ (μ), where μ is a finite measure, and T is a closed non-negative operator in L¹ (μ) satisfying additional technical conditions. For such problems the notion of strongly mild solutions is defined, and local existence and uniqueness theorems for such solutions are established. The results of the analysis are applied to the reflection kernels with both isotropically scattering homogeneous and anisotropically scattering inhomogeneous medium.     

Growth and properties of GaSb, Ga1-xInxSb and Ga1-xAlxSb epilayers by MOCVD

GaSb-based compound semiconductors are suitable materials for low-noise avalanche photo-diodes(APD's) and long wavelength laser diodes and photodetectors. In this paper, we review the metal organic chemical vapor deposition (MOCVD) growth conditions and the properties of GaSb, GaInSb and AlGaSb epitaxial layers, including the effects of III/V ratio, growth temperature, pressure and growth rate on electrical quality, optical properties, surface morphology and solid distribution coefficients.     

Nonlinear dynamics of self-pulsating laser diodes under external drive

A self-pulsating laser diode under external drive shows the nonlinear dynamical effects of two competing frequencies. One can establish a route to chaos by increasing the modulation current. However, when the modulation frequency is varied, the chaotic state is suddenly destroyed at the harmonic frequencies of the self-pulsating frequency. This approach therefore offers a simple chaotic light source for possible optical chaotic communication.     

Resolution of an ancient surface science anomaly: work function change induced by N adsorption on W [100

For many decades it has been assumed that an adsorbate centered above a metal surface and with a net negative charge should increase the work function of the surface. However, despite their electronegativity, N adatoms on W[100] cause a significant work function decrease. Here we present a resolution of this anomaly. Using density functional theory, we demonstrate that while the N atom carries a negative charge, of overriding importance is a reduction in the surface overspill electron density into the vacuum, when that charge is engaged in bonding to the adatom. This novel interpretation is fundamentally important in the general understanding of work function changes induced by atomic adsorbates.     

A Low-Voltage Quadrature CMOS VCO Based on Voltage-Voltage Feedback Topology

A novel low-voltage quadrature voltage-controlled oscillator (QVCO) with voltage feedback to the input gate of a switching amplifier is proposed and implemented using the standard TSMC 0.18-mum CMOS 1P6M process. The proposed circuit topology is made up of two low-voltage LC-tank VCOs, where the coupled QVCO is obtained using the transformer coupling technique. At the 0.7-V supply voltage, the output phase noise of the VCO is -124.9 dBc/Hz at 1-MHz offset frequency from the carrier frequency of 2.4GHz, and the figure of merit is -185.35dBc/Hz. Total power consumption is 5.18 mW. Tuning range is about 135 MHz while the control voltage was tuned from 0 to 0.7V     

The Optimized Geometry of the SiGe HBT Power Cell for 802.11a WLAN Applications

A novel SiGe heterojunction bipolar transistor power cell for wireless LAN IEEE 802.11a power amplifier (PA) applications is proposed. The subcells with different emitter stripe widths have been compared. Besides, the layout of a novel power cell is designed and optimized to alleviate nonideal effects for better performance. Compared with the performance of power cells, it is demonstrated that this novel power cell is superior to other power cells for the design of the PA     

A practical device scheme for designing the dopant profile of source/drain extension region in sub-quarter-micron p-MOSFET's

A practical device scheme for designing sub-0.25 μm p-MOSFET's has been examined with respect to the dopant profile of source/drain (S/D) extension. Though shallow junction was reported to be helpless to reduce short channel effect for devices with the same effective gate length (L_eff), shallow-junction techniques are critically important to the practical device/process design for controlling the overlap of S/D extension with the gate. Adjusting the lateral dopant diffusion of S/D extension by other processes except shallow junction techniques may degrade the process control and the resultant performance for devices of the target gate length. In terms of a practical IC technology for sub-0.25 μm p-MOSFET's, an L_eff value properly smaller than the target gate length should be employed to well control the short channel effect and achieve the driving capability as large as possible. Hence, a scheme that properly adjusts the doping concentration for p-S/D extension formed by a given shallow-junction technique is significantly practical for designing the sub-0.25 μm p-MOSFET's with trade-off between driving capability and short channel effect.     

Photo-enhanced native oxidation process forHg0.8Cd0.2Te photoconductors

Proposes an easy and reproducible vapor-phase photo surface treatment method to improve the device performance of the Hg_0.8 Cd_0.2Te photoconductive detector. We explore the effect of surface passivation on the electrical and optical properties of the HgCdTe photoconductor. Experimental results, including surface mobility, surface carrier concentration, metal-insulator-semiconductor leakage current, 1/f noise voltage spectrum, the 1/f knee frequency, responsivity R_λ, and specific detectivity D* for stacked photo surface treatment and ZnS or CdTe passivation layers are presented. These data are all directly related to the quality of the interface between the passivation layer and the HgCdTe substrate. We found that, by inserting a photo native oxide layer, we can shift the 1/f knee frequency, reduce the noise power spectrum, and achieve a lower surface recombination velocity S. A higher D* can also be achieved. It was also found that HgCdTe photoconductors passivated with stacked layers show improved interface properties compared to the photoconductors passivated only with a single ZnS or CdTe layer