Four-channel polarization-insensitive optically transparent wavelength converter

Multichannel wavelength converters may be important components in the cross-connects in future wavelength-division multiplexed (WDM) transport networks. We demonstrate a multichannel, polarization-insensitive, optically transparent wavelength converter, based on four-wave mixing in two semiconductor optical amplifiers in a polarization-diversity arrangement. Bit-error-rate (BER) measurements with four input 2.5-Gb/s WDM channels, spaced by 2 nm, show penalties for wavelength conversion less than 2.6 dB at 10/sup -9/ BER. Changes in the state of polarization of the input signals cause the output power to change by less than 1.2 dB, and the corresponding power penalties change by less than 0.9 dB.     

Wavelength selection for low-saturation pulse oximetry

Conventional pulse oximeters are accurate at high oxygen saturation under a variety of physiological conditions but show worsening accuracy at lower saturation (below 70%). Numerical modeling suggests that sensors fabricated with 735 and 890 nm emitters should read more accurately at low saturation under a variety of conditions than sensors made with conventionally used 660 and 900 nm band emitters. Recent animal testing confirms this expectation. It is postulated that the most repeatable and stable accuracy of the pulse oximeter occurs when the fractional change in photon path lengths due to perturbations in the tissue (relative to the conditions present during system calibration) is equivalent at the two wavelengths. Additionally, the penetration depth (and/or breadth) of the probing light needs to be well matched at the two wavelengths in order to minimize the effects of tissue heterogeneity. At high saturation these conditions are optimally met with 660 and 900 nm band emitters, while at low saturation 735 and 890 nm provide better performance     

Electrical linewidth test structures fabricated in monocrystallinefilms for reference-material applications

The physical widths of reference features incorporated into electrical linewidth test structures patterned in films of monocrystalline silicon have been determined from Kelvin voltage measurements. The films in which the test structures are patterned are electrically insulated from the bulk-silicon substrate by a layer of silicon dioxide provided by SIMOX (Separation by the IMplantation of OXygen) processing. The motivation is to facilitate the development of linewidth reference materials for critical-dimension (CD) metrology-instrument calibration. The selection of the (110) orientation of the starting silicon and the orientation of the structures' features relative to the crystal lattice enable a lattice-plane-selective etch to generate reference-feature properties of rectangular cross section and atomically planar sidewalls. These properties are highly desirable for CD applications in which feature widths are certified with nanometer-level uncertainty for use by a diverse range of CD instruments. End applications include the development and calibration of new generations of CD instruments directed at controlling processes for manufacturing devices having sub-quarter-micrometer features     

Transmission capacity of optical path overhead transfer schemeusing pilot tone for optical path network

Photonic networks based on the optical path concept and wavelength division multiplexing (WDM) technology require unique operation, administration, and maintenance (OAM) functions. In order to realize the required OAM functions, the optical path network must support an effective management information transfer method. The method that superimposes a pilot tone on the optical signal appears very interesting for optical path overhead transfer. The pilot tone transmission capacity is determined by the carrier to noise ratio which depends on the power spectral density of the optical signal. The pilot tone transmission capacity of an optical path network employing WDM technology is elucidated; 4.5 kb/s transmission can be realized when the pilot tone modulation index is set at 3%     

Three-dimensional atom probe study of the segregation behaviour of Ni91Pt9 alloy after sputtering

To investigate local ordering and segregation phenomenon in a Ni91Pt9-alloy after sputtering and annealing a 3D optical atom probe (OAP) has been used. The specimen tips have been prepared from polycrystalline samples. To sputter the samples a separate preparation chamber with a scannable Ar-sputter-gun is connected to the OAP vessel. When necessary, the sample can be electrically heated to induce segregation and cure the altered layer. After a heat treatment of a Ni91 at. %Pt 9 at.% specimen at 1100 K the surface of a (111)-oriented specimen is enriched in platinum by a factor of two in relation to the bulk. The phenomenon of short-range ordering has been investigated on the surface and in the subsurface volume. A 3D reconstruction of this annealed NiPt specimen shows regions with high concentration of platinum that gives an indication at short-range ordering. Uniform sputtering of the tip without a heat treatment induces a decisive depletion of Pt on the surface and the following subatomic layers. The atom-probe results of specimens in thermal equilibrium are in close agreement to further surface sensitive results obtained from Ion Scattering Spectroscopy (ISS) and Auger Electron Spectroscopy (AES).     

New concept for applying edge line phase-shifting masks to arbitrary mask layouts

This paper explains the principle of a method which avoids printing of phantom resist lines due to undesired intensity minima appearing on Cr-less edge line phase-shifting masks. The method combines principles of grey-tone lithography and attenuated phase-shifting masks to give, what we call, a Cr-Less Attenuated Phase-shifting mask (CLAP). Rules for generating a CLAP design and a paradigm setup of a CLAP mask are presented. The capabilities and possible limitations of the CLAP method based on simulated results for a standard wafer stepper setup using the SOLID lithography simulator are being assessed.     

10 Gbit/s optical soliton transmission over 7200 km by using amonolithically integrated MQW-DFB-LD/MQW-EA modulator light source

The authors demonstrate 10 Gbit/s optical soliton transmission in a recirculating loop through the use of a monolithically integrated MQW-DFB-LD/MQW-EA modulator light source. The timing jitter due to the Gordon-Haus effect is successfully reduced by the optical bandpass filters conventionally used in the cascaded EDFAs to avoid the accumulation of amplified spontaneous emission. The transmission distance of 7200 km is achieved at a bit error rate of 10^-9     

Parametric inference for step-stress models

Applications of the additive accumulation of damages (AAD) or the accelerated failure time (AFT) and the proportional hazards (PH) models in accelerated life testing with step-stresses are discussed. A new model including AAD and PH models is proposed. It is more reasonable than the PH model and wider then the AAD model. Constructing the maximum likelihood function is discussed     

Analysis of burn-in time using the general law of reliability

Empirical lifetime distributions sometimes have a bathtub-shaped failure rate. This paper deals with some models having a bathtub-shaped failure rate. The root-mean-square criterion is proposed for selection of the best model. Besides two criteria of optimum burn-in time are proposed. The comparison of some models with the general law of reliability is given to determine a burn-in time in a number of examples.