Large-bandwidth frequency conversion in high-NA step index opticalfibers

Using high-NA step index optical fibers, we show, theoretically, that large-bandwidth second-harmonic generation and sum frequency generation can be achieved at conversion frequencies in the visible region of the spectrum     

STI process steps for sub-quarter micron CMOS

This paper presents Shallow Trench Isolation (STI) process steps for sub-1/4 μ CMOS technologies. Dummy active areas, vertical trench sidewalls, excellent gap filling, counter mask etch step and CMP end point detection, have been used for a 0.18 μm CMOS technology. Electrical results obtained with a 5.5 nm gate oxide thickness show good isolation down to 0.3 μm spacing. Good transistor performances have been demonstrated.     

Effect of annealing in an atomic-hydrogen atmosphere on the properties of amorphous hydrated silicon films and the parameters of p-i-n structures based on them

The decrease in the density of dangling silicon-silicon bonds in a-Si:H films as a result of annealing in an atomic-hydrogen atmosphere is determined by their density in the initial (nonannealed) film. The change in the total hydrogen density in a-Si:H films, annealed in an atomic-hydrogen atmosphere, is determined by the type of silicon-hydrogen bonds and the impurity content: The hydrogen content can decrease to 1 at. % in the presence of monohydride bonds (2020 cm⁻¹) and no change is observed in the hydrogen content in the presence of oxygen (≲0.1 at. %). A decrease in the defect density as a result of annealing in an atomic-hydrogen atmosphere is observed for all films. The Staebler-Wronski effect — AM-1 irradiation for 10 h — is observed for all films irrespective of the total hydrogen density, the type of silicon-hydrogen bonds, and the presence of oxygen. Fiz. Tekh. Poluprovodn. 32, 620–626 (May 1998)     

Fixed-frequency and threshold molecular photoelectron spectra of S 1s, Si 1s and Cl 1s core levels

Fixed-frequency and threshold photoelectron spectra have been recorded for ionization from the S ls shells in SF₆, CS₂ and COS, the Si 1s shells in SiH₄ and SiCl₄ and the Cl 1s shell in SiCl₄ using synchrotron radiation. Fixed-frequency spectra generally showed a single strong ionization feature with associated weak satellite structure due to excited ionized states. Threshold spectra closely resembled X-ray absorption spectra but with an additional feature due to direct ionization. In cases where resonant process enhanced the NEXAFS spectrum direct ionization was not observed.     

Chemical composition and reaction analysis of single aerosol particles

In situ measurements of gas-liquid surface reactions of single aerosol microdroplets are presented. By means of optical levitation in combination with elastic (Mie) and inelastic (Raman) light scattering it is possible to get information on the chemistry of e.g. acid/base reactions as well as the physical behavior of single microparticles.     

Reactivity of sites on Al2O3 surface modified by Ni

It has been established that CO oxidation with excess O₂ on Ni/Al₂O₃ forms an inhomogeneous NiO contact surface that smoothes critical effects in the sharp reactivity change.     

Evaluation of Qbd for electrons tunneling fromthe Si/SiO2 interface compared to electron tunneling from thepoly-Si/SiO2 interface

Electrical time-to-breakdown (TTB) measurements have shown the charge to breakdown Q_bd of gate oxide capacitors fabricated on n-type well (n-well) substrates always to be higher than that of capacitors on p-type well (p-well) substrates on the same wafer when both are biased into accumulation under normal test conditions. Here the authors correlate the higher n-well Q_bd to smooth capacitor oxide/substrate interfaces and minimized grain boundary cusps at the poly-Si gate/oxide interfaces, confirming that Fowler-Nordheim tunneling is the dominant current conduction mechanisms through the oxide. They correlate higher Q_bd to higher barrier height for a given substrate type and observe that the slope of the barrier height versus temperature plot is lower for both p-well and n-well cases with electrons tunneling from the silicon substrate. This is attributed to surface roughness at the poly-Si gate/SiO₂ interface. A poly-Si gate deposition and annealing process with clean, smooth oxide/substrate interfaces will improve the p-well breakdown characteristics and allow higher Q_bd to be achieved     

The Assessment of Reservation Prices of an Intermediate R&D Result and Patent Reward Under Oligopolistic Competitive Behaviour

One of the shortcomings of R&D evaluation is a lack of emphasis on analytical assessment of the value of an on-going R&D project. This paper addresses the problem concerning the distributive aspect of access to superior knowledge. Decision tree analysis and probability models appear to be appropriate tools for assessing the values of an intermediate result and patent reward of a firm's R&D decision in an environment of perfect information and oligopolistic competition. The assessed values are used as minimum prices acceptable to the firm when the knowledge is disseminated to the public. This paper will attempt to resolve this problem through the determination of the appropriate values of the reservation price of the first-stage invention in terms of the final reward and of a patent reward for which the inventor is willing to apply.     

High speed p-type SiGe modulation-doped field-effect transistors

We report on the fabrication and characterization of high-speed p-type modulation-doped field-effect transistors (MODFETs) with 0.7-μm and 1-μm gate-lengths having unity current-gain cut-off frequencies (f_T) of 9.5 GHz and 5.3 GHz, respectively. The devices were fabricated on a high hole mobility SiGe heterostructure grown by ultra-high-vacuum chemical vapor deposition (UHV-CVD). The dc maximum extrinsic transconductance (g_m) is 105 mS/mm (205 mS/mm) at room temperature (77 K) for the 0.7-μm gate length devices. The fabricated devices show good pinch-off characteristics and have a very low gate leakage current of a few μA/mm at room temperature and a few nA/mm at 77 K