玻璃中CdSeS纳米晶体的生长及其性能

对掺有镉、硒、硫的玻璃在500—800℃退火2—24h,生长了不同尺寸的CdSxSe1x纳米晶体.用分光光度计和光致发光光谱(PL)分析了纳米晶体的性能.退火温度低于550℃,纳米晶体处于成核阶段,600—625℃处于正常扩散生长阶段,700—800℃处于竞争生长阶段;而650℃处于两种生长阶段之间.虽然650℃下生长的纳米晶体的尺寸分布比较窄,但纳米晶体的尺寸随退火时间的延长几乎不变,在该温度改变退火时间很难改变纳米晶体的平均尺寸.在所有样品中出现了深能级缺陷,在650℃退火时间小于4h或大于16h有利 关键词： 纳米晶体 生长机理 深能级缺陷     

应变超晶格系统的共振行为及其动力学稳定性

在经典力学框架内和Seeger方程基础上,讨论了应变超晶格界面附近的位错动力学行为,指出了系统的非线性共振将导致位错的运动与堆积,并可能造成超晶格的分层或断裂.首先,引入阻尼项,在小振幅近似下,把描述一般位错运动的Seeger方程化为了超晶格系统的广义Duffing方程.利用多尺度法分析了系统的主共振、超共振和子共振,并找到了系统出现这三类共振的临界条件.结果表明,系统的临界条件与它的物理参数有关,只需适当调节这些参数就可以原则上避免共振的出现,保证了超晶格材料的完整性和性能的稳定性. 关键词： 位错动力学 应变超晶格 共振 分岔     

含周期性空腔结构吸声机理的研究

为了研究水下含周期性空腔结构的吸声机理,建立并验证了含轴对称空腔周期性结构吸声特性计算的简化有限元仿真方法,用简化的有限元模型结合遗传算法对水下环境含周期性圆柱空腔结构的吸声性能进行了优化设计.从能量耗散、变形和模态的角度分析了含周期性空腔结构的吸声机理.空腔结构谐振包括表层的弯曲振动和空腔附近的径向变形,且径向运动也...     

SO_2和NO_2在γ-Al_2O_3(110)表面吸附的第一性原理计算

采用基于平面波基组的Vienna Ab-initio Simulations Package (VASP)程序研究了SO_2和NO_2在γ-Al_2O_3(110)表面和羟基化γ-Al_2O_3(110)表面的吸附,获得了SO_2和NO_2吸附的不同构型和结构参数.对吸附能,电荷转移,差分电荷密度和投影态密度等进行分析和讨论.对比发现,在γ-Al_2O_3(110)表面SO_2的吸附能力强于NO_2.SO_2或NO_2在非羟基化γ-Al_2O_3(110)表面吸附时O原子的2p轨道和Al原子的3s3p轨道作用形成O-Al键,且SO_2吸附时键结强度高于NO_2.NO_2吸附时费米能级以下有部分反键态,削弱了与γ-Al_2O_3(110)表面相互作用.在羟基化γ-Al_2O_3(110)表面SO_2或NO_2的吸附能力会低于非羟基化表面,但是SO_2的吸附能力依旧强于NO_2.计算结果说明SO_2与γ-Al_2O_3(110)表面的相互作用强于NO_2.以上研究,将有助于理解SO_2和NO_2在γ-Al_2O_3的反应性,为进一步研究它们的非均相转化和在灰霾形成中的促进作用奠定基础.     

大孔径宽光谱变焦镜头设计北大核心CSCD

在高压电线运输电力过程中容易发生电晕放电现象,存在安全隐患,因此,进行电晕放电的检测十分必要。利用日盲紫外镜头进行电晕检测是检测手段之一。基于Zemax多重组态功能设计了一款大孔径宽光谱变焦镜头,目的是配合变焦范围为90 mm~165 mm变焦距紫外镜头应用,可在电晕放电信号检测时,全天候、快速准确找出损坏线路的位置。该镜头采用4组元、近对称结构型式,F数为1.4,可变焦范围在30 mm~55 mm,工作光谱波段为400 nm~850 nm,空间频率100 lp/mm处全视场MTF≥0.4,最大畸变≤±3%,均采用标准球面设计,系统总长为110 mm,适用于0.847 cm(1/3英寸)CCD,能较好地矫正各类像差,满足各零件基本加工工艺要求。     

Determination of the surface states from the ultrafast electronic states in a thermoelectric material

We reveal the electronic structure in Yb Cd₂Sb₂,a thermoelectric material,by angle-resolved photoemission spectroscopy(ARPES)and time-resolved ARPES(tr ARPES).Specifically,three bulk bands at the vicinity of the Fermi level are evidenced near the Brillouin zone center,consistent with the density functional theory(DFT)calculation.It is interesting that the spin-unpolarized bulk bands respond unexpectedly to right-and left-handed circularly polarized probe.In addition,a hole band of surface states,which is not sensitive to the polarization of the probe beam and is not expected from the DFT calculation,is identified.We find that the non-equilibrium quasiparticle recovery rate is much smaller in the surface states than that of the bulk states.Our results demonstrate that the surface states can be distinguished from the bulk ones from a view of time scale in the nonequilibrium physics.     

光自旋霍尔效应中横移的影响因素研究

研究了光束在空气与电介质分界面传输产生的自旋霍尔效应,揭示了光束重心横移分别与偏振态、折射率差以及入射角三者之间的定性关系.研究发现各光场横移都随偏振参量增大而增大,左、右旋椭圆偏振光的横移等值反向,圆偏振态下的横移比椭圆偏振态下的横移大.改变折射率差的大小,反射光横移随折射率差的增大而减小,但当折射率差接近零时,反射...     

基于X射线衍射的GaN薄膜厚度的精确测量

结合Williamson-Hall plot方法和线型分析方法的优点,提出了一种有效分离有限晶粒尺寸和非均匀应力等X射线衍射展宽效应的方法,可以用于GaN外延层厚度等参数的快速精确测量.用该方法对一系列在蓝宝石衬底上生长的厚度在0.7—4.2μm的GaN外延膜进行了测量,并与椭圆偏振光谱法测量结果进行了比较,结果表明其差别<4%,反应了这种方法的准确性. 关键词： GaN薄膜 厚度测量 X射线衍射     

Lie symmetrical perturbation and adiabatic invariants of generalized Hojman type for Lagrange systems

Based on the invariance of differential equations under infinitesimal transformations of group, Lie symmetries, exact invariants, perturbation to the symmetries and adiabatic invariants in form of non-Noether for a Lagrange system are presented. Firstly, the exact invariants of generalized Hojman type led directly by Lie symmetries for a Lagrange system without perturbations are given. Then, on the basis of the concepts of Lie symmetries and higher order adiabatic invariants of a mechanical system, the perturbation of Lie symmetries for the system with the action of small disturbance is investigated, the adiabatic invariants of generalized Hojman type for the system are directly obtained, the conditions for existence of the adiabatic invariants and their forms are proved. Finally an example is presented to illustrate these results.     

Compound buried layer SOI high voltage device with a step buried oxide

A silicon-on-insulator (SOI) high performance lateral double-diffusion metal oxide semiconductor (LDMOS) on a compound buried layer (CBL) with a step buried oxide (SBO CBL SOI) is proposed.The step buried oxide locates holes in the top interface of the upper buried oxide (UBO) layer.Furthermore,holes with high density are collected in the interface between the polysilicon layer and the lower buried oxide (LBO) layer.Consequently,the electric fields in both the thin LBO and the thick UBO are enhanced by these holes,leading to an improved breakdown voltage.The breakdown voltage of the SBO CBL SOI LDMOS increases to 847 V from the 477 V of a conventional SOI with the same thicknesses of SOI layer and the buried oxide layer.Moreover,SBO CBL SOI can also reduce the self-heating effect.