Mechanisms of methane activation and transformation on molybdenum oxide based catalysts

We present a comprehensive survey of different C-H activation pathways over various kinds of active sites of terminal oxygens [=O] and bridge oxygens [-O-] by using Mo3O9 model systems. This allows us to provide some insights into fundamental issues concerning C-H activation by metal oxo species involved in many heterogeneous, homogeneous, and enzymatic processes. We show that H abstraction is the most feasible reaction pathway for the activation of a C-H bond on molybdenum oxides; and that [=O] is more active than [-O-]. Our calculations also suggest that (2+2) can be an alternative if M=O bond possesses a high polarity, while (5+2) can provide another effective pathway if two M=O bonds are in close proximity. Implications for the related heterogeneous, homogeneous, and enzymatic processes are discussed.     

Novel oxovanadium phosphate tubule incorporating 2,2-bipyridine ligands: hydrothermal synthesis and crystal structure of [(V(IV)O)(3)(mu(5)-PO(4))(2)(2,2'-bpy)(mu-OH(2))].1/3H(2)O

The novel tubular framework of [(V(IV)O)(3)(mu(4)-PO(4))(2)(2,2'-bpy)(mu-OH(2))].1/3H(2)O, which was synthesized from hydrothermal reaction, possesses some attractive structural features: (i) O=V(IV)O(4)(OH(2)) octahedra and PO(4) tetrahedra linked together by corner-sharing and face-sharing into a cylinder-shaped channel including 6 water molecules per cell unit, and (ii) (VO)(2,2'-bpy) groups regularly arranged around the tube, so that the 2,2-bpy ligands constitute an organic shell around an aqueous polar channel.     

A step-economic and one-pot access to chiral Cα-tetrasubstituted α-amino acid derivatives via a bicyclic imidazole-catalyzed direct enantioselective C-acylation

C^α-Tetrasubstituted α-amino acids are ubiquitous and unique structural units in bioactive natural products and pharmaceutical compounds. The asymmetric synthesis of these molecules has attracted a lot of attention, but a more efficient method is still greatly desired. Here we describe the first sequential four-step acylation reaction for the efficient synthesis of chiral C^α-tetrasubstituted α-amino acid derivatives from simple N-acylated amino acids via an auto-tandem catalysis using a single nucleophilic catalyst. The synthetic efficiency is improved via a direct enantioselective C-acylation; the methodology affords the corresponding C^α-tetrasubstituted α-amino acid derivatives with excellent enantioselectivities (up to 99% ee). This step-economic, one-pot, and auto-tandem strategy provides facile access to important chiral building blocks, such as peptides, serines, and oxazolines, which are often used in medicinal and synthetic chemistry.

The first four-step sequential reaction for the synthesis of C^α-tetrasubstituted chiral α-amino acid derivatives via auto-tandem catalysis has been developed.     

EPON和WDM-PON的分析比较

文章分析了以太网无源光网络(EPON)和波分复用无源光网络(WDM-PON)的多址技术、物理层关键技术和二层协议,特别针对这两种技术点对点仿真(P2PE)的实现给出了详细的分析,比较了这两种技术的性能,最后给出了结论并指出了二者不同的应用方向.     

Simultaneous all-optical inverted and noninverted wavelength conversion using a single-stage fiber-optical parametric amplifier

We have demonstrated, for the first time to our knowledge, simultaneous all-optical inverted and noninverted wavelength conversion by using a single-stage two-pump fiber-optical parametric amplifier with an extinction ratio between 7 and 14 dB over 24 nm.     

Characteristics of a 12-domain MVA-LCD

A multi-domain (12-domain) vertical alignment liquid crystal display (MVA-LCD) device is proposed and its electro-optic characteristics evaluated through a 3-D simulator. The MVA-LCD exhibits advantages in wide viewing angle, high transmittance, fast response time, and small color shift when a pair of wide view crossed circular polarizers is employed. Potential applications of this MVA-LCD for high quality LCD TVs and computer monitors are emphasized.     

Microstructure evolution of the Sn–Ag–y%Cu interconnect

The lead free Sn–Ag–y%Cu (y = 0.0, 0.5, 1.0 and 2.0) interconnect interfacial microstructures and the microstructure evolution under thermal treatment (isothermal aging, 150 °C/1000 h) were studied in detail by using surface microetching microscopy and cross section microscopy. The corresponding mechanical and reliability behaviors were evaluated by performing shear test and fracture mode analysis before and after the thermal treatment. The results indicate: (i) The interconnects could have different microstructures and intermetallic compound (IMC), depending on the Cu content. The Cu–Sn IMC could have microstructures that were clusters or protrusion-like, Augustine grass leaf-like, scissor-like, tweezers-like, etc. (ii) Ag₃Sn IMCs were not observed at time zero for any interconnect groups, but they occurred after the aging for all groups. The Ag₃Sn IMC could have different microstructures, again depending on Cu content. For low Cu content, the Ag₃Sn IMCs were granules or nodules; for higher Cu content, Ag₃Sn IMCs were plate-like. (iii) The growth of Ag₃Sn plates was promoted by the growth of Cu–Sn IMCs, but indirectly linked to the Cu content. (iv) High Cu content (1.0 wt% and higher) could degrade the mechanical and reliability performances of the LF interconnect by providing a brittle joint, which was mainly achieved through the substantial growth of Cu–Sn IMCs and Ag₃Sn plates.     

Low-temperature conductance measurements of surface states in HfO2–Si structures with different gate materials

Metal-oxide-semiconductor capacitors based on HfO₂ gate stack with different metal and metal compound gates (Al, TiN, NiSi and NiAlN) are compared to study the effect of the gate electrode material on the trap density at the insulator–semiconductor interface.C–V and G–ω measurements were made in the frequency range from 1 kHz to 1 MHz in the temperature range 180–300 K. From the maximum of the plot G/ω vs. ln(ω) the density of interface states was calculated, and from its position on the frequency axis the trap cross-section was found. Reducing temperature makes it possible to decrease leakage current through the dielectric and to investigate the states located closer to the band edge.The structures under study were shown to contain significant interface trap densities located near the valence band edge (around 2×10¹¹ cm⁻²eV⁻¹ for Al and up to (3.5–5.5)×10¹² cm⁻² eV⁻¹ for other gate materials). The peak in the surface state distribution is situated at 0.18 eV above the valence band edge for Al electrode. The capture cross-section is 5.8×10⁻¹⁷ cm² at 200 K for Al–HfO₂–Si structure.     

Quantum-mechanical effects and gate leakage current of nanoscale n-type FinFETs: A 2d simulation study

This paper simulates a kind of new sub-50 nm n-type double gate MOS nanotransistors by solving coupled Poisson-Schrödinger equations in a self-consistent manner with a finite element method, and presents a systematic simulation-based study on quantum-mechanical effects, gate leakage current of FinFETs. The simulation results indicate that the deviation from the classical model becomes more important as the gate oxide, gate length and Fin channel width becomes thinner and the Fin channel doping increases. Gate tunneling current density reduces with the body thickness decreasing. Excessive scaling increases the gate current below Fin thickness of 5 nm. The gate current can be dramatically reduced beyond 10¹⁷ cm⁻³ with the Fin body doping increasing. In order to understand the influence of electron confinement, quantum mechanical simulation results are also compared with the results from the classical approach. Our simulation results indicate that quantum mechanical simulation is essential for the realistic optimization of the FinFET structure.     

飞机系统内的干扰源及干扰防止方法

现代飞机电子设备越来越多,而一个良好的电磁环境对于飞机系统正常工作有着重要的作用.该文通过对飞机上干扰源的认识、分析及干扰的防止方法,对从事飞机电气设计的工程技术人员起到一些借鉴作用.