A call admission and rate control scheme for multimedia support over IEEE 802.11 wireless LANs

Quality of service (QoS) support for multimedia services in the IEEE 802.11 wireless LAN is an important issue for such WLANs to become a viable wireless access to the Internet. In this paper, we endeavor to propose a practical scheme to achieve this goal without changing the channel access mechanism. To this end, a novel call admission and rate control (CARC) scheme is proposed. The key idea of this scheme is to regulate the arriving traffic of the WLAN such that the network can work at an optimal point. We first show that the channel busyness ratio is a good indicator of the network status in the sense that it is easy to obtain and can accurately and timely represent channel utilization. Then we propose two algorithms based on the channel busyness ratio. The call admission control algorithm is used to regulate the admission of real-time or streaming traffic and the rate control algorithm to control the transmission rate of best effort traffic. As a result, the real-time or streaming traffic is supported with statistical QoS guarantees and the best effort traffic can fully utilize the residual channel capacity left by the real-time and streaming traffic. In addition, the rate control algorithm itself provides a solution that could be used above the media access mechanism to approach the maximal theoretical channel utilization. A comprehensive simulation study in ns-2 has verified the performance of our proposed CARC scheme, showing that the original 802.11 DCF protocol can statically support strict QoS requirements, such as those required by voice over IP or streaming video, and at the same time, achieve a high channel utilization. Hongqiang Zhai received the B.E. and M.E. degrees in electrical engineering from Tsinghua University, Beijing, China, in July 1999 and January 2002 respectively. He worked as a research intern in Bell Labs Research China from June 2001 to December 2001, and in Microsoft Research Asia from January 2002 to July 2002. Currently he is pursuing the PhD degree in the Department of Electrical and Computer Engineering, University of Florida. He is a student member of IEEE. Xiang Chen received the B.E. and M.E. degrees in electrical engineering from Shanghai Jiao Tong University, Shanghai, China, in 1997 and 2000, respectively, and the Ph.D. degree in electrical and computer engineering from the University of Florida, Gainesville, in 2005. He is currently a Senior Research Engineer at Motorola Labs, Arlington Heights, IL. His research interests include resource management, medium access control, and quality of service (QoS) in wireless networks. He is a Member of Tau Beta Pi and a student member of IEEE. Yuguang Fang received a Ph.D degree in Systems and Control Engineering from Case Western Reserve University in January 1994, and a Ph.D degree in Electrical Engineering from Boston University in May 1997. From June 1997 to July 1998, he was a Visiting Assistant Professor in Department of Electrical Engineering at the University of Texas at Dallas. From July 1998 to May 2000, he was an Assistant Professor in the Department of Electrical and Computer Engineering at New Jersey Institute of Technology. In May 2000, he joined the Department of Electrical and Computer Engineering at University of Florida where he got the early promotion with tenure in August 2003 and has been an Associate Professor since then. He has published over one hundred (100) papers in refereed professional journals and conferences. He received the National Science Foundation Faculty Early Career Award in 2001 and the Office of Naval Research Young Investigator Award in 2002. He is currently serving as an Editor for many journals including IEEE Transactions on Communications, IEEE Transactions on Wireless Communications, IEEE Transactions on Mobile Computing, and ACM Wireless Networks. He is also actively participating in conference organization such as the Program Vice-Chair for IEEE INFOCOM’2005, Program Co-Chair for the Global Internet and Next Generation Networks Symposium in IEEE Globecom’2004 and the Program Vice Chair for 2000 IEEE Wireless Communications and Networking Conference (WCNC’2000).     

A new Pd-oxide-Al/sub 0.3/Ga/sub 0.7/As MOS hydrogen sensor

A new and interesting Pd-oxide-Al/sub 0.3/Ga/sub 0.7/As MOS hydrogen sensor has been fabricated and studied. The steady-state and transient responses with different hydrogen concentrations has been measured at various temperatures. Based on the large Schottky barrier height and presence of oxide layer, the studied device exhibits a high hydrogen detection sensitivity and wide temperature operating regime. The studied device exhibits the low-leakage current and obvious current changes when exposed to hydrogen-contained gas. Even at room temperature, a very high hydrogen detection sensitivity of 155.9 is obtained when a 9090 ppm H/sub 2//air gas is introduced. Furthermore, when exposed to hydrogen-contained gas at 95/spl deg/C, both the forward and reverse currents are substantially increased with increased hydrogen concentration. In other words, the studied device can be used as a hydrogen sensor under the applied bidirectional bias. Under the applied voltage of 0.35 V and 9090 ppm H/sub 2//air hydrogen ambient, a fast adsorption response time about 10 s is found. The transient and steady-state characteristics of hydrogen adsorption are also investigated.     

基于模式理论光栅椭偏参数反演的数值模拟

将一种广泛用于求解系统优化问题的方法——正单纯形法，求解光栅的椭偏方程。首先，利用求解光栅的傅立叶模式理论对TE和TM波的复反射系数进行求解。然后计算出其相应的椭偏参数(△，Ψ)，并在该值的基础上加入不同偏差的随机高斯噪声，将加入噪声后的值(△m，Ψm)作为模拟测量值。最后使用优化算法进行反演。通过对几种常用面形光栅椭偏参数的数值模拟，一方面表明傅立叶模式理论计算光栅的椭偏参数不仅精度高。而且速度快；另一方面表明利用正单纯形法得到的光栅参数值很接近于正演时假设的参数值，从而从理论上证明了利用椭偏法测量光栅各种光学参数的可行性。     

Whispering-gallery-like modes in square resonators

The mode frequencies and field distributions of whispering-gallery (WG)-like modes of square resonators are obtained analytically, which agree very well with the numerical results calculated by the FDTD technique and Pade approximation method. In the analysis, a perfect electric wall for the transverse magnetic mode or perfect magnetic wall for the transverse electric mode is assumed at the diagonals of the square resonators, which not only provides the transverse mode confinement, but also requires the longitudinal mode number to be an even integer. The WG-like modes of square resonators are nondegenerate modes with high-quality factors, which make them suitable for fabricating single-mode low-threshold semiconductor microcavity lasers.     

基于Agilent-VEE平台的测试系统设计与应用

美国安捷伦公司(原惠普公司)的Agilent-VEE，NI公司的Lab VIEW和Lab Windows／CVI开发软件等是国际上公认的优秀的虚拟仪器开发平台软件，人们对以应用后两者开发测试系统比较了解，但对VEE在测试系统中的应用少有介绍。本文介绍基于Agilent-VEE平台和GPIB总线的实用测试系统的组成、特点及仪器控制方式。     

不同注F剂量与CMOS运放电路辐照损伤的相关性

在不同注F剂量条件下,对P沟和N沟两种不同差分对输入CMOS运放电路的电离辐照响应进行了研究.分析比较了注F和未注F运放电路电离辐照响应之间的差异.结果表明,在栅场介质注入适量的F,可有效抑制辐照感生的氧化物电荷尤其是界面态的增长,从而提高CMOS运放电路的抗辐照特性.     

完全非相干白光一维光生伏打暗空间孤子

使用白炽灯作光源在LiNbO₃∶Fe晶体内实验观察到一维白光光生伏打暗空间孤 子. 由奇数 和偶数初始条件分别产生了灰孤子和灰孤子对，它们所感应的波导能导向白光和相干光. 用 相干光清楚地探测到它们内部的多模结构. 该实验证明了白光光生伏打暗空间孤子的存在， 并指出了用完全非相干的白光暗孤子控制和导向相干光的可能性. 关键词： 光生伏打效应 自陷 完全非相干孤子 波导     

一类Feistel密码的线性分析

该文提出一种新的求取分组密码线性偏差上界的方法，特别适用于密钥线性作用的Feistel密码．该分析方法的思路是，首先对密码体制线性偏差进行严格的数学描述，分别给出密码线性偏差与轮函数F及S盒的线性偏差的数学关系；然后通过求取线性方程组最小重量解，确定密码线性偏差的上界．     

下一代无线通信概念和技术

下一代无线通信(NextG:Next-generationwireless)的主流是随时随地的无线通信系统和无缝的高质量无线业务。概述了随时随地的无线通信和业务发展情况,并且介绍了为下一代无线通信的发展提供基础的关键技术。     

Hf-doped and NH/sub 3/-nitrided high-K gate dielectric thin film with least drain current degradation and flatband voltage shift

A novel technique to form high-K dielectric of HfSiON by doping base oxide with Hf and nitridation with NH/sub 3/, sequentially, is proposed. The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared with conventional SiO/sub 2/ gate at the approximately same equivalent oxide thickness. Additionally, negligible flatband voltage shift is achieved with this technique. Time-dependent dielectric breakdown tests indicate that the lifetime of HfSiON is longer than 10 years at V/sub dd/=2 V.