Gunshot residue determination by high-performance liquid chromatography with electrochemical detection

A procedure for the detection of gunshot residue via the organic constituent diphenylamine is described. The method incorporates high-performance liquid chromatography with electrochemical detection.     

3patial Load Balancing in Nide-Area Wireless Networks

Load balancing is typically used in the frequency domain of cellular wireless networks to balance paging, access, and traffic load across the available bandwidth. In this paper, we extend load balancing into the spatial domain, and we develop two approaches-network load balancing and single-carrier multilink-for spatial load balancing. Although these techniques are mostly applied to cellular wireless networks and Wi-Fi networks, we show how they can be applied to EV-DO, a 3G cellular data network. When a device has more than one candidate server, these techniques can be used to determine the quality of the channel between a server and the device and to determine the load on each server. The proposed techniques leverage the advantages of existing EV-DO network architecture and are fully backward compatible. Network operators can substantially increase network capacity and improve user experience by using these techniques. Combining load balancing in the frequency and spatial domains improves connectivity within a network and allows resources to be optimally allocated according to the p-fair criterion. Combined load balancing further improves performance.     

An antenna diversity MMIC vector modulator for HIPERLAN with lowpower consumption and calibration capability

The design and performance of a vector-modulator-based phase shifter for high-performance radio local area networks at 5.2 GHz is presented in this paper. Low power consumption is achieved using a 0.6-μm GaAs MESFET process. At a voltage supply of 1.4 V and with a current consumption between 3.5-7 mA, the gain is 0.6 dB and the 1-dB input compression point is -9 dBm. A full 360° phase control range is achieved by combining two of the three vectors, which have phase offsets of 120°, with variable amplitude. Chip size is only 1.3 mm ². The proposed vector modulator applies a new circuit configuration of variable-gain amplifiers to compensate their transmission phase errors. Within a gain control range of 20 dB, the phase error can be reduced to ±3°, which is about a factor of eight better than the results obtained by single FET amplifiers. A simple calibration procedure for the proposed vector modulators is presented to improve the manufacturing yield and to decrease the impact due to temperature changes and aging. A maximum gain error of ±0.8 dB and a maximum phase error of ±7° have been measured after applying this calibration to the designed vector modulator     

Strained quantum well modulation-doped ingasb/algasb structures grown by molecular beam epitaxy

Strained single quantum well InGaSb/AlGaSb structures for field-effect transistor applications have been grown by molecular beam epitaxy. Modulation-doped p-type structures have been characterized by a variety of techniques, including Hall effect, Shubnikov-de Haas measurements, and cyclotron resonance. These structures exhibit improved hole transport in comparison to similar GaSb/ AlGaSb structures as a result of strain-splitting of the valence band. P-channel field-effect transistors fabricated in this system exhibited a maximum transconductance of 51 and 161 mS/mm at 300 and 77K, respectively, for a 1.2 μm gate-length device.     

Study of the Au/SiO<Subscript>2</Subscript> + Co(65 at %)/GaAs heterostructure interfaces by the polarized neutron reflectometry method

Using the polarized neutron reflectometry method, we studied Au/SiO₂ + Co(60 at %)/GaAs granular films, which display a giant injection magnetoresistance effect in a narrow temperature range close to T = 300 K. We revealed the existence of a layer having particular magnetic properties at the boundary of a film with a semiconductor GaAs substrate. Experiments carried out at temperatures T = 300 K and T = 100 K showed an insignificant difference in the magnetic profile of the heterostructure.     

Gigahertz modulation of GaAs-based bipolar cascade vertical cavity surface-emitting lasers

The high-frequency modulation characteristics of GaAs-based bipolar cascade vertical cavity surface-emitting lasers operating at 980 nm with GaAs tunnel junctions and p-doped Al0.98Ga0.02As oxide apertures have been measured. We achieve -3 dB laser output modulations of 6.5 GHz for two-stage and 9.4 GHz for three-stage devices in response to small-signal current injection at an operating temperature of -50 degrees C.     

Deficiencies of Lattice Subgroups of Lie Groups

Let be a lattice in a connected Lie group. We show that, besidesa few exceptional cases, the deficiency of is nonpositive.1991 Mathematics Subject Classification 20F05.     

室温连续可见光垂直腔面发射激光器

利用钨丝掩膜质子轰击工艺制造出一种室温条件下可连续工作的可见光垂直腔面发射激光器。激射波长为６５０ｎｍ,未装在热沉上时连续工作最大输出功率为８５μＷ。