Thermal Oxidation of Polyethylene Films Containing Dispersed Copper and Amine Antioxidant

Thermal oxidation of polyethylene filled with dispersed copper and containing an amine antioxidant was studied. The concentration ranges in which the catalytic effect of the metal on the polymer oxidation or the stabilizing effect of the antioxidant prevails were determined. Under certain conditions, dispersed copper enhances the stabilizing effect of the antioxidant.     

Low Electrical Percolation Threshold of Silver and Copper Nanowires in Polystyrene Composites

Silver and copper nanowires have been synthesized using a scalable method of AC electrodeposition into porous aluminum oxide templates, which produces gram quantities of metal nanowires ca. 25 nm in diameter and up to 5 and 10 μm in length for Ag and Cu, respectively. The nanowires have been used to prepare polystyrene nanocomposites by solution processing. Electrical resistivity measurements performed on polymer nanocomposites containing different volume fractions of metal indicate that low percolation thresholds of nanowires are attained between compositions of 0.25 and 0.75 vol %.     

An ARQ scheme using combined QPSK and BPSK transmissions

We propose a hybrid ARQ scheme which uses QPSK modulation for the first transmission and BPSK modulation for retransmissions. The throughput performance of the proposed ARQ scheme is better that those of ARQ schemes purely using QPSK modulation or purely using BPSK modulation for transmissions. Furthermore, the proposed scheme does not require any operation of error correction as usually required in hybrid ARQ schemes. Therefore, the ARQ scheme proposed in this paper can be easily implemented     

Study and design of step-index channel waveguide bends withlarge-angle and low-loss characteristics

By using micro-prisms, improved three-dimensional (3-D) bends of the embedded and buried waveguides of step-index profile are proposed. A simple phase compensation rule for the optimal design of the micro-prism is also presented. Through the simulation of 3-D semivectorial finite-difference beam propagation method, the transmission characteristics of the improved bends are shown to have been enhanced dramatically as compared with those of the conventional ones. Even for a bend angle of as large as 10°, the normalized transmitted power can still be greater than 95%. These results of 3-D bends are then compared with those of the two-dimensional (2-D) ones which are simplified from 3-D structures by the effective index method, and physical explanation of the discrepancy between the 3-D and 2-D results is introduced. The influences of waveguide structures and prism parameters on the transmission characteristics are discussed in detail. Some criteria for the design of large-angle low-loss 3-D improved bends are also accessed     

Wideband HEMT MMIC low-noise amplifier with temperaturecompensation

A wideband low-noise pseudomorphic HEMT MMIC variable-gain amplifier has been designed and fabricated. The amplifier has a nominal gain of 13 dB across the band 2-20 GHz, with gain flatness better than ±0.4 dB. The noise figure is less than 3 dB across the band 6-16 GHz. An on-chip temperature-sensing diode is used to provide a linear temperature correction which has been used to reduce the gain variation of the amplifier by a factor of 2 across the temperature range -50°C to +95°C     

Multiple negative-differential-resistance (MNDR) phenomena of ametal-insulator-semiconductor-insulator-metal (MISIM)-like structurewith step-compositioned InxGa1-xAs quantum wells

In this paper, a new multiple negative-differential-resistance (MNDR) device based on a metal-insulator-semiconductor-insulator-metal (MISIM)-like structure with step-compositional In_xGa_1-x As quantum wells has been fabricated and demonstrated. The interesting MNDR phenomena are found in the current-voltage (I-V) characteristics of this device. At room temperature, the triple switching behaviours and quadruple stable operation states are obtained. In addition, the sixfold switching behaviors and a staircase-shaped I-V characteristic are observed at -105°C. A sequential carrier accumulation at InGaAs subwells and the potential lowering process are used to qualitatively explain the interesting MNDR phenomena. From the experimental results, it is shown that the studied device has good potential in multiple-valued logic applications     

ATM网络的可用比特率业务

本文介绍了可用比特率业务的业务特点，速率控制机制以及该业务存在的问题。     

电离层时域探测方法

给出了各向同性分层半空间等离子体对时域电磁脉冲后向散射的有关公式，得出了反抛物层时域响应的解析表达式，并利用时频分析方法演出了电子密度分布。     

关于三商映射

三商映射是完备映射和开映射的共同推广。本文综述三商映射的理论，论术这三商映射，开映射，紧覆盖映射，诱导完备映之间的一些转换关系，提出了几个供进一步研究的问题。