Influence of surface and bulk layers on the crossover features for interaction parameters of a ferroelectric thin film

The phase diagram of a ferroelectric thin film is studied by using the usual mean-field approximation. The crossover features, from the ferroelectric-dominant phase diagram to the paraelectric-dominant phase diagram, for the physical parameters of the thin film are discussed. Special attention is devoted to the investigation of surface and bulk layers, and how to influence the crossover values of exchange interactions and transverse fields.     

基于W61PC的短波数字信号分析

本文首先介绍了数字信号的特征参数、常用的短波数字通信体制和W61PC分析信号流程,对典型短波数字信号进行识别,结合实验数据,分析了W61PC对不同信噪比数字信号的识别能力。     

A Visual Lossless Image-Recompression Framework

In this paper, we propose a novel image recompression frame?work and image quality assessment (IQA) method to efficient?ly recompress Internet images. With this framework image size is significantly re...     

云计算系统可用性分析方法初探

目前,云计算是业务系统主要部署方式之一。为解决云计算系统可用性评估问题,文章针对云计算系统资源构建方式进行分析,对不同形式构建的资源的可用性计算方法进行讨论,并提出云计算系统的可用性评估方法,为高可用的云计算系统构建和云计算系统服务等级制定提供参考。     

雪崩击穿条件下4.5kV IGBT器件的背面优化研究

The static avalanche breakdown behavior of 4.5 kV high-voltage IGBT is studied by theory analysis and experiment. The avalanche breakdown behaviors of the 4.5 kV IGBTs with different backside structures are investigated and compared by using the curve tracer. The results show that the snap back behavior of the breakdown waveform is related to the bipolar PNP gain, which leads to the deterioration of the breakdown voltage. There are two ways to optimize the backside structure, one is increasing the implant dose of the N C buffer layer, the other is decreasing the implant dose of the P C collector layer. It is found that the optimized structure is effective in suppressing the snap back behavior and improving the breakdown characteristic of high voltage IGBT.     

4500V SPT IGBT 动静态损耗优化

本文关注高压IGBT动静态性能的优化。对4500V增强型平面IGBT进行研究,该结构在阴极一侧具有载流子存储层。其中垂直结构采用软穿通(SPT)结构,顶部结构采用增强型平面结构,该结构被称为SPT IGBT,仿真结果显示4500V SPT 具有软关断波形,与SPT结构相比提升了导通压降和关断损耗之间的折衷关系。同时,对不同载流子存储层掺杂浓度对动静态性能的影响也进行了研究,以此来优化SPT IGBT的动静态损耗。     

Temperature dependent interfacial and electrical characteristics during atomic layer deposition and annealing of HfO2 films in p-GaAs metal-oxide-semiconductor capacitors

We have investigated the temperature dependent interfacial and electrical characteristics of p-GaAs metal-oxide-semiconductor capacitors during atomic layer deposition(ALD) and annealing of HfO₂ using the tetrakis(ethylmethyl) amino hafnium precursor. The leakage current decreases with the increase of the ALD temperature and the lowest current is obtained at 300℃ as a result of the Frenkel-Poole conduction induced leakage current being greatly weakened by the reduction of interfacial oxides at the higher temperature. Post deposition annealing(PDA) at 500℃ after ALD at 300℃ leads to the lowest leakage current compared with other annealing temperatures. A pronounced reduction in As oxides during PDA at 500℃ has been observed using X-ray photoelectron spectroscopy at the interface resulting in a proportional increase in Ga₂O₃. The increment of Ga₂O₃ after PDA depends on the amount of residual As oxides after ALD. Thus, the ALD temperature plays an important role in determining the high-k/GaAs interface condition. Meanwhile, an optimum PDA temperature is essential for obtaining good dielectric properties.     

高端路由器主备同步技术的研究

高端路由器设备通常采用主备倒换来延长系统的可靠运行时间,而主备数据同步是实现主备倒换的关键技术。针对传统主备同步技术可靠性低,同步速率低的问题,提出了一种新的主备数据同步解决方案。新的主备同步方案使用了可靠的主备数据同步通道;提出给同步数据分类,并采用合适的方法同步。经实验验证,该技术方案应用在高端路由器上,提高了主备同步速率与可靠性,从而提高了系统性能,同时模块化的设计,具有很好的通用性,实现简单,实用性高。     

光伏电站设计智能优化

由于目前光伏电站设计目前没有相应的标准,因此以个人经验为指导的情况,无法保证电站建设的成本最优,鉴于此问题,本文提出了一种光伏电站优化设计方法,基于模拟退火算法,通过对光伏区域中的组件进行最优分组来实现两级电缆成本的最优。并通过实际项目对该算法进行检验,达到比较理想效果。     

实数编码人工免疫算法概率强收敛速度估计研究

取代传统的状态转移矩阵特征值估计方法,运用随机过程相关理论,对实数编码人工免疫算法的收敛速度估计进行了研究,该方法从满足人工免疫算法概率强收敛的必要条件出发,将其作为一般人工免疫算法符合的充分条件,提出了一种实数编码人工免疫算法指数速度概率强收敛的估计新方法.该方法以种群中最佳抗体的最终收敛为判断依据,避免了传统估计方法过于保守的不足,可用于一类人工免疫算法的收敛性和收敛速度的判断,在人工免疫算法实际应用中如何优化其收敛速度具有一定理论参考意义.