新超导体MgCNi3的虚晶掺杂研究

用全势线性缀加平面波方法,考虑局域自旋密度近似研究虚晶掺杂MgCNi3的超导电性和磁性.计算了自旋极化能带结构、体弹性模量和它对压力的导数、原子磁矩 m 及其变化率.计算结果表明,对于电子掺杂的Mg1-xAlxCNi3(0≤x≤0.5), 超导电性和磁涨落随掺杂量的增加逐渐减小.空穴掺杂的Mg1-xNaxCNi3,在x＝0.12处出现铁磁相变,超导电性消失.在MgCNi3少量空穴掺杂区域(0≤x<0.12),表现为超导与磁涨落共存的不稳定状态.     

Ⅰ类超晶格势阱中能级分布及电子跃迁规律研究

在研究大量实验曲线的基础上,指出势阱所有能级均有一定的宽度,电子或空穴在各能级中出现的概率符合正态分布,从理论上分析了I类超晶格和双势垒单势阱的发光光谱与吸收光谱·解释了GaAs/Ga1-xAlxAs多量子阱和超晶格吸收光谱吸收边及量子阱变窄时各吸收峰的“蓝移现象”及GaAs/Ga1-xAlxAs双势垒单量子阱样品的电流—电压特性曲线及电导—电压特性曲线的特征和出现的“负阻效应”·     

Eu3+离子在微晶玻璃研究中的探针作用

制备出单掺Eu3+离子的氟氧化物玻璃陶瓷系列样品,利用Eu3+离子作为荧光探针,通过热处理前后Eu3+离子发射光谱中电偶极子跃迁与磁偶极子跃迁强度比值的变化表征在玻璃材料中微晶是否形成,分析了Eu3+离子荧光发射谱中电偶极子跃迁与晶体场对称性的关系,进一步表征了稀土离子所处微晶晶格场的变化.     

THE FIRST EXPERIMENT OF A THz GYROTRON WITH A PULSE MAGNET

A THz gyrotron with a pulse magnet has been designed, constructed and operated in FIR FU. It is developed as one of high frequency gyrotrons included in Gyrotron FU Series. The gyrotron has already achieved the first experimental result for high frequency operations whose radiation frequency exceeds 1 THz. In this paper, the design detail and the operation test results for sub-terahertz to terahertz range are described. The second harmonic operation is confirmed experimentally at the expected frequency of 1.005 THz due to TE_6,11 cavity mode at the magnetic field intensity of 19.0 T.     

Phase modulation of the signal beam in three-wave forward mixing in photorefractive bismuth silicon oxide

The interaction of three forward beams in a BSO crystal is investigated under conditions when the two pump beams are anti-symmetrically detuned and the signal beam is phase modulated. For sinusoidal phase modulation the signal gain is shown to be dependent on the instantaneous frequency detuning. Single and double maxima in gain are obtained depending on the voltage amplitude applied to the piezoelectric mirror. For triangular phase modulation a slight asymmetry is found in the gain versus detuning curve.     

利用排列熵检测近40年华北地区气温突变的研究

运用一种新的动力学突变检测方法——排列熵(permutation entropy，PE)算法，计算并分析了中国华北地区52个站点1960年—2000年逐日平均气温资料的排列熵演化情况，发现中国华北地区气温在20世纪70年代中期、80年代初均发生了较大突变；进一步用经验模态分解(empirical mode decomposition，EMD)方法对排列熵序列进行逐级平稳化处理，结果发现这一地区的气温突变与准10年这一年代际时间尺度的周期变率密切相关，其原因与太阳黑子活动有着密切联系. 关键词： 华北 突变 排列熵算法 经验模态分解     

A NOVEL METHOD FOR FABRICATING COMPOSITE MOSAIC MEMBRANE WITH UNIQUE NF SELECTIVITY

A novel method of fabricating composite mosaic membranes was studied on the basis of interracial polymerization （IP） by coating a thin selective layer onto the surface of a micro-porous hollow-fiber membrane, in which, 2,5-diaminobenzene sulfonic acid was used as one monomer of the IP reaction, and a mixture of trimesoyl chloride （TMCI） and 4-（chloromethyl） benzoyl chloride as the other monomer. Through the IP reaction a thin selective layer with negatively charged groups could be first formed on the polyethersulfone （PES） support membrane. Then trimethylamine solution was introduced to modify the IP layer through a quaternization reaction. Thus the selective layer of this composite membrane contained both negatively charged and positively charged groups to perform the mosaic functionality. Characterization of the composite mosaic membranes was carried out through permeation experiments using different inorganic salts and dyes. The experimental results showed that the membranes could permeate both mono- and bi-valent inorganic salts, but reject larger organic molecules. Such a mosaic membrane is potentially useful for the separation of salts from water-soluble organics, especially in dye and textile industries.     

图像的自动采集分析和实现

文章针对焊件检测过程中需大量采集和分析实时图像的要求 ,利用小波分析的特点 ,相关跟踪识别视频图像运动状态 ,实现自动采集、分析处理和储存一并完成 ,解决了视频图像连续捕获不能得到高像质的问题。     

Surface analytical characterization of oxide-free Si(100) wafer surfaces

Summary Wet-chemical cleaning procedures of Si(100) wafers are surface analytically characterized and compared. Hydrophobic surfaces show considerably less native oxides in comparison to hydrophilic surfaces.The growth of the oxide is determined as a function of exposure to air by means of XPS measurements. The chemically shifted Si2p XPS signal is utilized for the quantification of the growth kinetics.One hour after cleaning no chemically shifted Si2p XPS peak is discernible on the hydrophobic surfaces. Assuming homogeneous oxide growth, the detection limit of native oxides is estimated to be below 0.05 nm using an emission angle of 18° with respect to the wafer surface. The calculation of the oxide thickness from the chemically shifted and nonchemically shifted Si2p XPS peak intensities is carried out according to Finster and Schulze [1]. For more than a day after cleaning no surface oxides can be identified on the hydrophobic surfaces. The oxide growth kinetics is logarithmic. The very slow oxidation rate cannot be attributed to fluorine residues since no fluorine is seen by XPS. We explain the slow oxidation rate by a homogeneous hydrogen saturated Si(100) wafer surface.

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Oberflächenanalytische Charakterisierung oxidfreier Si(100)-Waferoberflächen