Clifford Analysis Techniques for Spherical PDE

For a ? R\alpha \in \mathbf{R}, the class of a-\alpha -order spherical harmonic functions in an open set W í\Omega \subseteq S^n-1\mathbf{S}^{n-1}, H^a(W)H^{\alpha }(\Omega ) is defined as the C²-C^{2}-solutions of D_au=0\Delta _{\alpha }u=0; where D_a=D_s+a(n+a-2)\Delta _{\alpha }=\Delta _{s}+\alpha (n+\alpha -2) is the spherical Laplace--Beltrami operator of order a\alpha and D_s\Delta _{s} is the radially independent part of the Laplace operator. We obtain a Green's integral formula for the functions in H^a(W)H^{\alpha }(\Omega ) with kernel expressed as a Gegenbauer function. As generalizations, higher order spherical iterated Dirac operators are defined in a polynomial form. Integral representations of the null solutions to these operators and an intertwining formula relating these operators on the sphere and their analogues in Euclidean space are presented.     

Toward Fuzzy Optimization without Mathematical Ambiguity

Fuzzy programming has been discussed widely in literature and applied in such various disciplines as operations research, economic management, business administration, and engineering. The main purpose of this paper is to present a brief review on fuzzy programming models, and classify them into three broad classes: expected value model, chance-constrained programming and dependent-chance programming. In order to solve general fuzzy programming models, a hybrid intelligent algorithm is also documented. Finally, some related topics are discussed.     

具连续时滞Liénard方程概周期解的存在唯一性

结合Liapunov泛函，研究了具连续时滞Lienard方程概周期解的存在唯一性和安全一致渐进稳定性。     

关于自组凯尔文电桥的测量不确定度

凯尔文电桥是国内大学基础物理实验所开设的实验内容之一，且多为自组式．关于自组凯尔文电桥的测量精度与桥路参数精度之间的关系，有些实验教材已有推导，但尚未涉及与两低阻相邻电压接头间跨桥电阻的定量关系，不注意这一点，会给测量结果带来一定的误差．本文就实际中常用的等双臂凯尔文电桥从理论上定量地推出了这一关系，进而给出了跨桥电阻可忽略时的适当阻值．     

A study on the electrical conductivity of multi-walled carbon nanotube aqueous solution

The electrical conductivity was investigated for multi-walled carbon nanotubes (MWNTs) dissolved in chloroform and toluene, respectively. The electrical conductivity remarkably increased with increase in the content of MWNTs, which is in accordance with Archie's equation . Furthermore, a hypothesis of the electronic transport process was proposed to explain the difference between the solution and the solid compound. In addition, the temperature dependence of the electrical conductivity shows that log σ vs. 1/T exist in a good linear relationship. The activation energy of the electrical conductivity decreased with increase in concentration and an inflexion was observed at 60 °C in MWNT/toluene solution.     

ADS7822及其在CO气体浓度监测仪中的应用

在介绍TI公司的12位串行、高速、微功耗A/D转换器ADS7822工作原理的基础上,以ADS7822在CO气体浓度监测仪的前向通道设计中的应用为例,讨论了它与AT2051单片机的硬件接口问题,给出了利用ADS7822进行A/D转换的51汇编语言程序,并做了详细注释.串行、微功耗及小型封装使ADS7822非常适合电池供电的智能便携式仪器采用.     

中国铁通企业信息化战略规划和措施

首先简单回顾了中国铁通成立之初计费管理系统的一期建设和二期扩容后支撑能力的明显不足,以及信息化建设初期各部门独立IT系统运行中的问题,然后较详细介绍了企业信息化规划的整体思路.包括业务系统和流程、组织和业务流程重组、信息技术战略和架构等.并在实践的基础上,列举了信息化系统实施过程中应避免的做法和应注意的事项.     

Effects of sodium salicylate on the febrile response and increased levels of cyclic AMP in cerebrospinal fluid during endogenous pyrogen-induced fever in rabbits

To further evaluate the causality between endogenous pyrogen (EP)-induced fever and cyclic adenosine-3',5'-monophosphate (cyclic AMP) level, the effects of sodium salicylate (SS) on the febrile response and increased levels of cyclic AMP in both cerebrospinal fluid (c.s.f.) and plasma during EP-induced fever in rabbits were observed. The results suggest that cyclic AMP is probably involved in the central mediation of EP-induced fever and that increased concentration of cyclic AMP in c.s.f. associated with EP-induced fever is not the result of temperature elevation but appears to be caused by the increased synthesis in the central nervous system. In addition it is confirmed that blood is impossibly a contributory source of increased cyclic AMP in c.s.f. during EP fever, and that SS may act subsequent to the increase in cyclic AMP.     

A new polysilicon CMOS self-aligned double-gate TFT technology

In this paper, a new polysilicon CMOS self-aligned double-gate thin-film transistor (SA-DG TFT) technology is proposed and experimentally demonstrated. The self-alignment between the top- and bottom-gate is realized by a backlight exposure technique. The structure has an ultrathin channel region (300 /spl Aring/) and a thick source/drain region. Experimental results show that this technology provides excellent current saturation due to a combination of the effective reduction in the drain field and the full depletion of the ultrathin channel. Moreover, for n-channel devices, the SA-DG TFT has a 4.2 times higher on-current (V/sub gs/=20V) as compared to the conventional single-gate TFT. Whereas for the p-channel devices, the SADG TFT has a 3.6 times higher on-current (V/sub gs/=-20V) compared to the conventional single-gate device.