语音识别算法的确定与实现

在语音识别的实验中，对几种算法方案进行了比较、分析和择优淘劣，标准是在一定词汇量的条件下，权衡占用机器的内存空间、（正确）识别率和响应速度。力争使与话者有关的单词语音识别系统的设计达到优化，取得满意的结果。本文即是此项实验的总结。     

Growth and characterization of hot-wall epitaxial CdTe on (111) HgCdTe and CdZnTe substrates

Thin CdTe films were deposited by hot-wall epitaxy (HWE) on (111) HgCdTe and CdZnTe substrates at temperatures from about 140 to 335°C. X-ray rocking curves were used to show that crystal quality of the CdTe (111)B films improved as substrate temperature increased from 140 to about 250°C. Rocking curve values for full width at half maximum (FWHM) decreased from 2–4 degrees at 140–150°C to less than 100 arc-s at 250°C, and a FWHM of 59 arc-s was the lowest value observed near 250°C. The FWHM of the HWE CdTe was found to be insensitive to growth rate below about 400Å/min, but increased to four degrees at 1250Å/min. X-ray diffraction confirmed that films grown on the B-face at higher temperatures were epitaxial, but contained a significant volume fraction, 35% to 50%, of rotational in-plane twins. Electron microscopy confirmed a coarse twin density, and photoluminescence spectra showed an absence of excitonic emission in the HWE films. Simultaneous growth on two (111) HgCdTe substrates with different surface polarities between 230°C and 335°C showed that deposition rate on the A-face decreased relative to that on the B-face as temperature increased. Films grown on the B-face exhibited better surface morphologies than those grown on the A-face.     

Long-wavelength 640×486 GaAs-AlGaAs quantum well infraredphotodetector snap-shot camera

A 9-μm cutoff 640×486 snap-shot quantum well infrared photodetector (QWIP) camera has been demonstrated. The performance of this QWIP camera is reported including indoor and outdoor imaging. The noise equivalent differential temperature (NEΔT) of 36 mK has been achieved at 300 K background with f/2 optics. This is in good agreement with expected focal plane array sensitivity due to the practical limitations on charge handling capacity of the multiplexer, read noise, bias voltage, and operating temperature     

β—BBO晶体的电光性能

用干涉法测量了β－ＢＢＯ晶体的电光系数：γ２２＝２．６，γ３３＝０．２３，γ３１＝０．２５，γ５１＝－３．５×１０－１２ｍ／Ｖ。结果表明如果在Ｙ方向加电场，Ｚ方向通光，β—ＢＢＯ晶体可能制作成有应用价值的光开关。     

钛酸铅系薄膜的热释电性能及其应用

叙述了钛酸铅系薄膜的热释电原理，介绍了国际上近几年钛酸铅系薄膜材料、制备工艺及热释电性能，并与块状陶瓷材料进行了比较，分析表明钛酸铅系薄膜具有优良的热释电性能及可观的应用前景。     

Si_（1－x）Ge_x／Si定向耦合器的研制

在运用ＳｉＧｅ脊形波导单模条件和有效折射率法分析ＳｉＧｅ／Ｓｉ定向耦合器结构参数的基础上，采用分子束外延和各向异性腐蚀技术制备出Ｓｉ１－ｘＧｅｘ／Ｓｉ（ｘ＝０．０５）单模定向耦合器．在波长为１．３μｍ时，平均串音小于－１８．１ｄＢ，输出功率耦合效率达到９８．１％     

Deep levels,electrical and optical characteristics in SnTe-Doped GaSb Schottky Diodes

The GaSb layers investigated were grown directly on GaAs substrates by molecular beam epitaxy (MBE) using SnTe source as the n-type dopant. By using admittance spectroscopy, a dominant deep level with the activation energy of 0.23-0.26 eV was observed and its concentration was affected by the Sb₄/Ga flux ratio in the MBE growth. A lowest deep-level concentration together with a highest mobility was obtained for GaSb grown at 550°C under a Sb₄/Ga beam equivalent pressure (BEP) ratio around 7, which should correspond to the lowest ratio to maintain a Sb-stabilized surface reconstruction. In the Hall measurement, an analysis of the temperature-dependent mobility shows that the ionized impurity concentration increases proportionally with the sample’s donor concentration, suggesting that the ionized impurity was introduced by an SnTe source. In addition, optical properties of an undoped p-, a lightly and heavily SnTe-doped GaSb layers were studied by comparing their photoluminescence spectra at 4.5K.     

红外加热胶接技术

提出了红外加热胶接的思想，并对红外加热胶接技术作了简单阐述。介绍了一种红外加热胶接矿用阻燃、防腐、橡塑风筒布的装置。     

Optical behaviour of photoimageable cholesteric liquid crystal cells with various novel chiral compounds

In theory, both polarity and steric hindrance are basic factors which affect molecular interactions. To investigate the optical properties and steric structures of chiral compounds having different chiral moieties which affect the wavelength of light reflection in liquid crystal (LC) cells, a series of novel chiral compounds and azobenzene derivatives were synthesized. The liquid crystalline phases of the compounds were identified using small angle X-ray diffraction, differential scanning calorimetry and polarizing optical microscopy. Cholesteric LC cells with various synthesized chiral dopants which selectively reflect visible light were first prepared, the photochemical switching behaviour of colours was then investigated, with special reference to the change in transmittance in cholesteric LC cells containing an azobenzene derivative as a photoisomerizable guest molecule. Reversible isomerization of azobenzene molecules occurred in the cholesteric systems, resulting in a depression of T_ChI and a shift of the selectively reflected wavelength. We discuss the photochemically driven change in the helical pitch of the cholesteric LCs with respect to structural effects involving the chiral moieties. Molecular interactions caused by the added dopants, reliability and stability of the photoisomerization, and UV irradiation effects on the cholesteric LC cells were also investigated. A real image was recorded through a mask on a cholesteric LC cell fabricated in this investigation.     

A Novel Athermal 40-Channel DWDM Multi/Demultiplexer Based on the Combination of AWGs and Interleaver

An athermal 40-channel dense wavelength-division-multiplexing multi/demultiplexer using a novel combination technology is proposed. It consists of one 1times4 100- to 400-GHz spacing interleaver filter and four sub-arrayed-waveguide gratings (AWGs). The temperature-dependent wavelength shift of the combined device is successfully suppressed to 0.058 nm in the -20degC to 70degC temperature range. Moreover, the combined device's adjacent crosstalk (typically -35 dB) is much better than conventional AWGs (typically -25 dB).