B－ISDN与现有网络互连的研究

本文主要围绕Ｂ－ＩＳＤＮ与现有各种网络（如ＰＳＰＤＮ、ＰＳＴＮ、ＬＡＮ等）的互连问题展开讨论，并针对不同的应用场合提出了相应的互连解决方案。     

Dynamic lithium-ion battery model for system simulation

Presents here a complete dynamic model of a lithium ion battery that is suitable for virtual-prototyping of portable battery-powered systems. The model accounts for nonlinear equilibrium potentials, rate- and temperature-dependencies, thermal effects and response to transient power demand. The model is based on publicly available data such as the manufacturers' data sheets. The Sony US18650 is used as an example. The model output agrees both with manufacturer's data and with experimental results. The model can be easily modified to fit data from different batteries and can be extended for wide dynamic ranges of different temperatures and current rates.     

Quality assurance for the analytical data of micro elements in food

The micro element content of food is an important quality index due to the action of these elements on human health. In this article, we discuss how to ensure the reliability of analytical data on micro elements in order to truly represent the condition of food. Sampling, treatment of the analytical sample, selection of the analytical method, standard solution, and certified reference material, blank test, calibration of the instrument and equipment, application of the quality control chart, assessment of the final analytical result, and quality assurance system are briefly described. Received: 5 July 2001 Accepted: 19 November 2001     

给定拓扑结构的网络的可靠性设计

本文首先讨论了网络链路堵概率的加权平均值，提出了网络分配的一般准则，并在考虑了网络链路生存链路概率的因素后，提出了更一般的网络链路堵塞概率的加权平均值，以此为基础，分别讨论了网络在给定点的费用条件下，使得网络可靠性最大的网络设计问题，以及在给定网络可靠性指标的前提下，使得网络费用最小的网络设计问题。     

Quasi-saturation capacitance behavior of a DMOS device

This paper reports a simulation study on the capacitance characteristics of a double-diffused metal-oxide semiconductor (DMOS) device operating in the quasi-saturation region. From the analysis, the capacitance effect of the gate oxide upon the drift region cannot be modeled as an overlap capacitance, because the drain-gate/source-gate capacitances of the DMOS device may exceed the gate-oxide capacitance due to the larger voltage drop over the gate oxide than the change in the imposed gate bias when entering the quasi-saturation region. This effect can be the explanation for the plateau behavior in the gate charge plot during turn-on and turn-off of the DMOS device. Based on the small-signal equivalent capacitance model, the accumulated charge in the drift region below the gate oxide may thoroughly associate with the drain terminal in the prequasi-saturation region and with the source terminal in the quasi-saturation region     

光刻胶灰化工艺与深亚微米线条的制作

随着器件尺寸的缩小，细线条的制作成为很关键的工艺，普通光学光刻已接近其分辨率的极限，而电子束光刻和Ｘ射线光刻技术复杂、费用昂贵。本文对光刻胶灰化工艺进行了分析和研究，并应用此工艺进行了深亚微米线条的制作，在普通光学光刻机上制作出宽度小于０．２５μｍ细线条。我们已将此工艺成功地应用在深亚微米ＭＯＳＦＥＴ的制作中。     

印制板液态感光阻焊油墨的工艺控制

本文介绍印制板液态感光阻焊油墨的工艺流程、工艺控制，并对生产中较常出现的几种质量问题进行讨论，进而提出解决措施。     

基于可寻址分支分配器的CATV收费系统

给出了一种基于可寻址分支分配器的ＣＡＴＶ收费管理系统设计方案，并着重介绍了系统的工作原理及可寻址分支分配器的设计。     

X波段及DBS接收用PHEMT单片低噪声放大器

报道了X波段及DBS接收用单片低噪声放大器的研制结果。利用CAD软件对单片电路进行优化设计，设计工作包括MBE材料、PHEMT器件和单片电路三部分。在研制过程中，开展了关键工艺的专题研究。研究结果为：单级单片放大器在10：5－11．6GHz范围内，NF≤1．82dB，G≥7.72dB；在11．7－12．2GHz范围内，NF≤1．80dB，G≥6．8dB；双级放大器在10．4－11．1GHz范围内，NF≤1．96dB，G≥15．3dB，最低噪声系数为1．63dB，最高增益为16．07dB。     

Solaris2.X操作系统上NFS的环境配置

本文描述了Ｓｏｌａｒｉｓ２．Ｘ操作系统上网络文件系统ＮＦＳ的特性及其环境配置，介绍了如何建立了ＮＦＳ服务器和ＮＦＳ客户机，从而实现了远程文件系统资源共享。