A new simplified two-dimensional model for the threshold voltage ofMOSFET's with nonuniformly doped substrate

A new simplified two-dimensional model for the threshold voltage of MOSFETs is derived in terms of simple characteristic functions. These characteristic functions are transformed from the exact series solution of the two-dimensional Poisson's equation, in which the effects of a nonuniformly doped substrate and a finite graded source-drain junction depth are included. In this model, charge-screening effects are proposed to account for the weak dependence of the threshold voltage on the substrate bias for short-channel MOSFETs, and exact source and drain boundary potentials can be approximated by their equivalent power functions. The accuracy of the simplified 2-D model is verified by 2-D numerical analysis. Moreover, comparisons between the simplified 2-D model and the experimental results are made, and good agreement is obtained for wide ranges of channel lengths, applied substrate, and drain biases     

BCM7113基本交互型STB的硬件设计

介绍一种基于BCM7113的数字电视机顶盒的硬件设计方案，该方案是应杭州市场的需求而设计开发的，最大的特点就是有线电视网和以太网的结合，BCM7113是Broadcom公司出品的集系统控制、信道解码和标清MPEG-2解码于一体的数字电视机顶盒专用芯片，该平台具有强大的扩展接口，如USB、ITU—R656等，并扩展了10M／100M以太网接口，有很强的可升级性。     

图书馆网站设计的探讨

介绍了当今信息时代建设图书馆网站的重要性和作用 ,以及在网站设计评估中应着重注意的包括网站内容、页面设计及安全性能等三方面的问题 ,同时提出 ,图书馆网站建设中如何在这几方面进行改进和完善。     

The origination and optimization of Si/SiO/sub 2/ interface roughness and its effect on CMOS performance

As CMOS device dimensions scale down to 100 nm and beyond, the interface roughness between Si and SiO/sub 2/ has become critical to device performance and reliability. Si/SiO/sub 2/ interface roughness degrades channel mobility decreasing drive currents. The authors have used atomic force microscopy to study surface roughness in the processing of 0.16 /spl mu/m CMOS integrated circuits. All of the process steps that could potentially affect the interface roughness have been studied. The results show that oxidation is the major contributor to the interface roughness. The rms roughness is found to be linearly dependent on oxide thickness. Transistors with Si/SiO/sub 2/ interface rms roughness that has been reduced from 1.6 to 1.1 /spl Aring/ by reducing oxide thicknesses show improved device drive currents. This technique for interfacial smoothing and device performance improvement has the advantage of being easily implemented in today's technology.     

图形电镀中抗镀现象——凹坑的原因剖析

该文通过对本公司在图形电镀时出现的凹坑现象,进行了一个简要的分析探讨,供大家参考。     

One-, two-, and three-photon pumped lasing in a novel liquid dye salt system

We report the observation of one-, two-, and three-photon pumped lasing in the same medium, a novel liquid dye salt system when excited by pulsed 0.532-, 1.06-, and /spl sim/1.49-/spl mu/m coherent radiation pulses, respectively. Since the gain medium is a liquid and not a solution, it contains a significantly higher effective dye concentration and, therefore, is highly suitable for multiphoton pumped lasing and optical power limiting applications. The lasing spectra, temporal waveforms, near- and far-field intensity distributions, and output/input efficiency were measured under the conditions of one-, two-, and three-photon pump configurations.     

Microstructure and thermal behavior of Sn-Zn-Ag solders

The microstructure and thermal behavior of the Sn-Zn-Ag solder were investigated for 8.73–9% Zn and 0–3.0% Ag. The scanning electron microscopy (SEM) analysis shows the Ag-Zn compound when the solder contains 0.1% Ag. X-ray diffraction (XRD) analysis results indicate that Ag₅Zn₈ and AgZn₃ become prominent when the Ag content is 0.3% and above. Meanwhile, the Zn-rich phase is refined, and the Zn orientations gradually diminish upon increase in Ag content. The morphology of the Ag-Zn compound varies from nodular to dendrite structure when the Ag content increases. The growth of the Ag-Zn compounds is accompanied by the diminishing of the eutectic structure of the Sn-9Zn solder. Differential scanning calorimetry (DSC) investigation reveals that the solidus temperature of these solders exists at around 198°C. A single, sharp exothermic peak was found for the solders with Ag content less than 0.5%. Liquidus temperatures were identified with the DSC analysis to vary from 206°C to 215°C when the Ag content ranges from 1.0% to 3.0%     

磷酸盐激光玻璃非激活吸收系数测量研究

介绍了高功率激光放大器系统中磷酸盐激光玻璃的静态透过率测量。在正常运行条件下,4片长按布儒斯特角放置的国产N31钕玻璃片对1.054um的激光波长平均静态透过率为94.5%,介质的损耗系数为0.294%cm-1,平均非激活吸收系数为0.146%cm-1。在此基础上对片状放大器的增益系数的测量结果进行了修正,获得了5.25%cm-1的小信号增益系数。     

High‐Tg Carbazole Derivatives as Blue‐Emitting Hole‐Transporting Materials for Electroluminescent Devices

A series of dicarbazolyl derivatives bridged by various aromatic spacers and decorated with peripheral diarylamines were synthesized using Ullmann and Pd‐catalyzed C–N coupling procedures. These derivatives emit blue light in solution. In general, they possess high glass‐transition temperatures (T_g > 125 °C) which vary with the bridging segment and methyl substitution on the peripheral amine. Double‐layer organic light‐emitting devices were successfully fabricated using these molecules as hole‐transporting and emitting materials. Devices of the configuration ITO/HTL/TPBI/Mg:Ag (ITO: indium tin oxide; HTL: hole‐transporting layer; TPBI: 1,3,5‐tris(N‐phenylbenzimidazol‐2‐yl)benzene) display blue emission from the HTL layer. The EL spectra of these devices appear slightly distorted due to the exciplex formation at the interfaces. However, for the devices of the configuration ITO/HTL/Alq₃/Mg:Ag (Alq₃ = tris(8‐hydroxyquinoline)aluminum) a bright green light from the Alq₃ layer was observed. This clearly demonstrates the facile hole‐transporting property of the materials described here.     

用新的电路形式提高HBT光调制器驱动电路的传输速率及性能

在传统光调制器驱动电路中,所用HBT截止频率的大小要达到驱动电路传输速率的4倍以上.文中在输出级采用共射共基HBT形式后,其器件的截止频率只需大于电路传输速率的2倍即可,从电路设计的角度降低了对所用器件的要求.文中分析了新的电路结构提高传输速率的原因并给出了模拟结果.同时新的电路结构也具有良好的热稳定性.