Compression Behaviour of Ni77P23 Amorphous Alloy up to 30.5 GPa

The compression behaviour of Ni77P23 amorphous alloy is investigated at room temperature in a diamond-anvil cell instrument using in-situ high pressure energy dispersive x-ray diffraction with a synchrotron radiation source. The equation of state is determined by fitting the experimental data according to the Birch-Murnaghan equation. It is found that the structure of Ni77P23 amorphous alloy is stable under pressures up to 30.5 GPa. Within the pressure range from zero to the experimental one, the pressure-induced structural relaxation is reversible.     

On a Generalized Cochrane Sum and Its Hybrid Mean Value Formula

The main purpose of this paper is to use a mean value theorem of Dirichlet L-functions to study the asymptotic property of a hybrid mean value of a generalized Cochrane sum, and give an interesting mean value formula.2000 Mathematics Subject Classification: Primary—11F20; Secondary—11F99     

Higher order soliton pulse compression in dispersion-decreasingoptical fibers

Compression of higher order optical solitons in fibers with anomalous dispersion decreasing along their length is investigated. We demonstrate high-quality compression of pulses with initial soliton order 1相似文献   

Chaos control and noise suppression in external-cavitysemiconductor lasers

Feedback-induced chaos and intensity noise enhancement in a laser diode with external optical feedback are studied by computer simulations. The enhancement of relative intensity noise (RIN) that is often observed in experiments is considered as a result of the feedback-induced deterministic chaos and the intensity noise suppression is treated from the viewpoint of chaos control. Especially, the conventional noise suppressing technique known as a high-frequency injection modulation is turned into a problem of stabilizing chaos through parameter modulations. We developed an analytical method which allows to optimize the modulation frequency from the linear stability analysis of the dynamical model that describes the laser diode with external feedback. The robustness of the modulation with respect to the modulation frequency and depth is verified and the results suggest the feasibility of applying our method to actual noise suppression. The RIN in the low-frequency region (up to 100 MHz) is shown to be reduced to the solitary laser level when the feedback-induced chaos is effectively controlled with the optimized modulation frequency     

采用模数转换技术提高脉冲激光测距的测时精度

针对脉冲激光测距中计数量化误差影响测时精度的问题,本文提出了采用模数转换技术提高测时精度的方法,并进行了可行性与精度分析,理论与实践结果均表明,该方法易于实现,能够容易地将计数量化误差减少若干个数量级。     

若干图的点强全染色(英文)

对图G及正整数k，映射f：满足：（1）任意e1，e3，如果e1，e2是相邻或相关联的，则有；（2）对u，v，w（G）有，则称f为G的一个k-点强全染色，并且K|G的社点强全染色称为G的点强全色数．本文讨论了一些特殊困的点强全色数，并提出了一个猜想：若G为每一分图的阶数不小于6的图，则（G），其中（G）为本文中定义的一新参数．     

完备可分度量群上的齐次Levy过程的复合Poisson逼近

该文利用算子半群的方法给出了取值于具有左不变度量的完备可分群的齐次Levy过程是复合Poisson过程的弱极限这一结论．     

Pass-transistor adiabatic logic with NMOS pull-down configuration

A new low power adiabatic logic family, pass-transistor adiabatic logic with NMOS pull-down configuration, is presented. For a 2:1 multiplexer, a power saving of ~800% is achieved, compared to a 2N-2N2P logic circuit at 20 MHz. Compared to pass-transistor adiabatic logic using single power-clock supply (PAL), the `tri-state' problem is solved, while power consumption is comparable. A four phase sinusoidal clock power supply is employed in the new logic family, which facilitates pipelining hence leading to higher throughput, compared to PAL     

智能工作站主机的MMPIS实验模型研究──一个全互连式结构MMPIS硬件环境的设计与实现

本文介绍中日国际合作开发研究的Ａ１型智能网（Ａ１型ＩＮ）智能工作站（ＩＷ）主机的并行推理硬件结构的实验模型设计与实现，给出了一种并行推理硬件支持环境实现方案和该方案在实现中若干问题的解决方法。     

Multiple negative-differential-resistance (MNDR) phenomena of ametal-insulator-semiconductor-insulator-metal (MISIM)-like structurewith step-compositioned InxGa1-xAs quantum wells

In this paper, a new multiple negative-differential-resistance (MNDR) device based on a metal-insulator-semiconductor-insulator-metal (MISIM)-like structure with step-compositional In_xGa_1-x As quantum wells has been fabricated and demonstrated. The interesting MNDR phenomena are found in the current-voltage (I-V) characteristics of this device. At room temperature, the triple switching behaviours and quadruple stable operation states are obtained. In addition, the sixfold switching behaviors and a staircase-shaped I-V characteristic are observed at -105°C. A sequential carrier accumulation at InGaAs subwells and the potential lowering process are used to qualitatively explain the interesting MNDR phenomena. From the experimental results, it is shown that the studied device has good potential in multiple-valued logic applications