分子振动态及其跃迁的激光相干控制

讨论了激光合成相干叠加态的原理及其性质 ,针对 XY2 型分子 ,证明了合成局域模振动的可行性 ,然后给出相干叠加态的跃迁几率特征 ,发现它仍表现出相干的特性 ,对之进行分析研究表明 ,分子的振动态具有可控性 ,态跃迁几率具有可控性。     

弱1—凸对策及其解的性质

本文提出了一类特殊的ｎ人合作对策模型─—弱１—凸对策，研究了弱１—凸对策的解的性质，并证明弱１—凸对策的解满足所有常见的公理化特征．     

线状锗等离子体X射线线谱的时间分辨测量

用自行研制的X射线条纹晶体谱仪首次测量了线状锗等离子体的X射线时间分辨谱。给出了类Ne-锗L线共振线的时间演化过程,并用类Ne-锗L线共振线与其双电子俘获伴线的相对强度比粗估了锗等离子体的电子温度及其随时间的变化,实验给出了X光激光增益区介质的电子温度为400～760eV,同时给出了电子温度保持相对恒定的时间不小于90ps(电子温度变化小于2％)。     

Selective saturation and inversion of multiple resonances in high-resolution solid-state 13C experiments using slow spinning CP/MAS and tailored DANTE pulse sequences.

Taking advantage of the long 13C T1 values generally encountered in solids, selective saturation and inversion of more than one resonance in 13C CP/MAS experiments can be achieved by sequentially applying several DANTE pulse sequences centered at different transmitter frequency offsets. A new selective saturation pulse sequence is introduced composed of a series of 90 degrees DANTE sequences separated by interrupted decoupling periods during which the selected resonance is destroyed. Applications of this method, including the simplification of the measurement of the principal values of the 13C chemical shift tensor under slow MAS conditions, are described. The determination of the aromaticity of coal using a relatively slow MAS rate is also described.     

A 0.1-μm delta-doped MOSFET fabricated with post-low-energyimplanting selective epitaxy

A simple fabrication technology for delta-doped MOSFETs, named post-low-energy implanting selective epitaxy (PLISE) is presented. The PLISE technology needs no additional photo-lithography mask, deposition step or etching step even for CMOS devices. The only additional step is growing undoped epitaxial channel layers by UHV-CVD after the channel implantation. With this technology, delta-doped NMOSFETs with 0.1-μm gate length were successfully fabricated. By optimizing the epi-layer thickness and the channel doping level, short-channel effects are suppressed enough to achieve 0.1-μm gate length. Moreover, the junction capacitance at zero bias is reduced by 50%     

Integration and propagation of a multi-criteria decision making model in constraint programming

In this paper we propose a general integration scheme for a Multi-Criteria Decision Making model of the Multi-Attribute Utility Theory in Constraint Programming. We introduce the Choquet integral as a general aggregation function for multi-criteria optimization problems and define the Choquet global constraint that propagates this function during the Branch-and-Bound search. Finally the benefits of the propagation of the Choquet constraint are evaluated on the examination timetabling problem.     

Resolvability properties via independent families

The authors give a consistent affirmative response to a question of Juhász, Soukup and Szentmiklóssy: If GCH fails, there are (many) extraresolvable, not maximally resolvable Tychonoff spaces. They show also in ZFC that for ω<λ?κ, no maximal λ-independent family of λ-partitions of κ is ω-resolvable. In topological language, that theorem translates to this: A dense, ω-resolvable subset of a space of the form (DI(λ)) is λ-resolvable.     

An Implicit Iteration Process with Errors for a Finite Family of r-strictly Asymptotically Pseudocontractive Mappings

In this paper,we will establish several strong convergence theorems for the approximation ofcommon fixed points of r-strictly asymptotically pseudocontractive mappings in uniformly convex Banachspaces using the modiied implicit iteration sequence with errors,and prove the necessary and sufficient conditionsfor the convergence of the sequence.Our results generalize,extend and improve the recent work,in thistopic.     

X射线三轴晶衍射法测量半绝缘GaAs单晶的化学配比

采用X射线三轴晶衍射法,根据As间隙原子对作为过量As在GaAs单晶材料中存在的主要形式的模型,可以无损、高精度测量半绝缘GaAs单晶的化学配比.并探讨了引起晶格变化的原因及其与熔体组分的关系,对于制备高质量GaAs单晶及其光电器件具有重要的意义.