威尔第:法尔斯塔夫

威尔第有几部歌剧取材于莎士比亚作品。也正是威尔第将这些作品搬上舞台,证实了两位不同时代戏剧天才的灵感相结合所进发出的艺术辉煌, 其中包括1871年的《阿依达》(开罗)。此后他沉默了16年,即他一生中第二次放弃舞台生涯。随即威尔第写出两部真正的莎士比亚歌剧,这就是1887年的《奥瑟罗》(米兰)和1893的《法尔斯塔夫》 (米兰)。《法尔斯塔夫》问世时,威尔第已经80高龄,这也是他所创作的最后一部歌剧,作为他歌剧创作顶峰的标志之一而流传后世。     

变温C-V和传输线模型测量研究AlGaN/GaN HEMT温度特性

通过对异质结材料上制作的肖特基结构变温C-V测量和传输线模型变温测量,研究了蓝宝石衬底AlGaN/GaN异质结高电子迁移率晶体管的直流特性在25～200℃之间的变化,分析了载流子浓度分布、沟道方块电阻、欧姆比接触电阻和缓冲层泄漏电流随温度的变化规律.得出了器件饱和电流随温度升高而下降主要由输运特性退化造成,沟道泄漏电流随温度的变化主要由栅泄漏电流引起的结论.同时,证明了GaN缓冲层漏电不是导致器件退化的主要原因.     

An Ultra-Low-Power Embedded EEPROM for Passive RFID Tags

采用Chartered 0.35μm EEPROM工艺设计并实现了一个适用于无源射频电子标签的256位超低功耗EEPROM存储器.芯片实现了块编程和擦写功能,并通过优化敏感放大器和控制逻辑的结构,实现了读存储器时间和功耗的最优化.最后给出了芯片在编程/擦写/读操作情况下的功耗测试结果.在电源电压为1.8V,数据率为640kHz时,EEPROM编程/擦写的平均功耗约为68μA,读操作平均功耗约为0.6μA.     

浅海底瞬变电磁探测系统关断沿影响因素研究

运用电路理论对发射线圈进行了建模分析;讨论了采用多匝小线圈进行浅海底瞬变电磁探测时,发射电流关断沿时间与电流幅值和发射线圈匝数之间的关系;给出了在保证发射磁矩的前提下,合理确定发射电流幅值与发射线圈匝数以缩短发射电流关断沿的原则,并通过实验进行了验证.     

低电压驱动的硅基Ka波段级联式MEMS移相器

通过在共平面波导上周期性地分布微机械电容,外加电压驱动改变电容值,可实现级联式MEMS移相器.本文讨论了优化相移特性对共平面波导特性阻抗及下拉电压的要求,通过工艺参数优化制备了高阻硅基上的Ka波段级联式MEMS移相器,测试结果表明制备器件具有较低的驱动电压,8V时即产生明显的相移量,在36GHz处15V驱动电压时相移量为118°,25V时为286°.对微结构弹性膜的机械振动寿命测试表明,13级级联的MEMS移相器所有弹性膜同步振动的寿命为3×10⁶次.为器件的实用化提供了重要保障.     

材料性能参数与板料激光弯曲成形角度的相关性研究

板料激光弯曲成形是一种柔性、无模成形新工艺，它通过激光扫描金属板料所导致的非均匀热应力使板料产生塑性变形。材料的性能参数(包括力学性能与热物理性能)对激光弯曲成形的影响很大，通过三维热机耦合有限元仿真研究了材料性能参数与板料激光弯曲角度之间的相关性，研究表明，小弹性模量、低屈服强度的材料容易产生大的弯曲变形。热膨胀系数与弯曲角度之间成正比关系，当热膨胀系数趋于零时，弯曲角度也趋于零。小的热传导系数有利于形成大的温度梯度，从而使板料产生大的弯曲变形；比热越小，加热区内材料的温升越大，使板料容易弯曲变形。     

Effects of pattern dependence on high-power polarization-division-multiplexing applications

High-power polarization-division-multiplexing (PDM) systems or functional modules, such as self-phase-modulation (SPM)-based all-optical regenerators, cross-phase-modulation (XPM)-based wavelength convertors or format convertors, all-optical logical gate, and so on, may suffer from the effects of pattern dependence. Such effects are experimentally investigated using relative time delay variation between bit sequences with orthogonal polarization states in a 2 × 10.65 Gb/s high-power on-off keying (OOK) PDM system. Eye-diagram-based signal-to-noise ratio (SNR) and bandwidth of broadened spectrum are measured and compared. An eye-diagram-based SNR fluctuation of up to 4 dB may occur as the delay changes.     

Rate dependence of temperature fields and energy dissipations in non-static pseudoelasticity

The temperature fields and the energy dissipations of shape memory alloys during the stress-induced martensitic transformations are studied theoretically and experimentally. The effect of the loading rate is analyzed. It was found that the temperature field inside a shape memory alloy sample varies strongly in space and time. The increase rate of the temperature is given by the difference between the rate of the latent heat release and the rate of the heat convection and conduction. The notion and the rate dependence of the energy dissipation are discussed in connection with the stress–strain hysteresis, the entropy production, and the Clausius–Duhem inequality.     

Finite size effect on the Raman frequency of phonons in nano-semiconductors

A comprehensive study on Raman spectroscopy with different excitation wavelengths, sample sizes, and sample shapes for optic phonons (OPs) and acoustic phonons (APs) in polar and non-polar nano-semiconductors has been performed. The study affirms that the finite size effect does not appear in the OPs of polar nano-semiconductors, while it exists in all other types of phonons. The absence of the FSE is confirmed to originate from the long-range Fr¨ohlich interaction and the breaking of translation symmetry. The result indicates that the Raman spectra of OPs cannot be used as a method to characterize the scale and crystalline property of polar nano-semiconductors.     

Scattering of Dirac Waves off Reissner-Nordström Black Holes

Dirac equation in Kerr geometry was separated by Chandrasekhar in 1976. In the present paper, the radial parts of Dirac equation in Reissner-Nordström (RN) geometry are solved. We concentrate on two cases. The first one is that the energies of the waves are greater than the height of the potential barrier and the second one is that the waves hit on the potential barrier. In each case, the reflection and transmission coefficients and the wave function are computed. We compare the solutions with several parameters to show how the properties of the scattered wave depend on these parameters.