一种高精度的非平稳随机信号实时建模算法研究

针对传统的非平稳随机信号时变参数筹分模型算法的不足,论文把非平稳随机信号时变参数差分模型与一种带自适应遗忘因子的RLS算法结合起来,形成一种有效的非平稳随机信号实时建模算法,仿真分析表明该算法不仅能获得快的收敛速度而且能获得高的建模精度。     

A new detection algorithm (NDA) based on fuzzy cellular neural networks for white blood cell detection.

White blood cell detection is one of the most basic and key steps in the automatic recognition system of white blood cells in microscopic blood images. Its accuracy and stability greatly affect the operating speed and recognition accuracy of the whole system. But there are only a few methods available for cell detection or segmentation due to the complexity of the microscopic images. This paper focuses on this issue. Based on the detailed analysis of the existing two methods--threshold segmentation followed by mathematical morphology (TSMM), and the fuzzy logic method--a new detection algorithm (NDA) based on fuzzy cellular neural networks is proposed. NDA combines the advantages of TSMM and the fuzzy logic method, and overcomes their drawbacks. With NDA, we can detect almost all white blood cells, and the contour of each detected cell is nearly complete. Its adaptability is strong and the running speed is expected to be comparatively high due to the easy hardware implementation of FCN. Experimental results show good performance.     

五种恒虚警方法性能分析

比较了五种恒虚警方法在各种杂波背景下的检测性能,得出CMLD-CFAR是工程上可以实现且检测性能比较好的一种恒虚警处理方法.     

个性化公开密钥系统的设计

论文提出利用用户提供的个性化信息来随机产生关联大素数,保证了素数选取的随机化、个性化,提高了RSA算法的安全性。     

信息系统灾难恢复能力评估方法研究

论文提出了一种信息系统灾难恢复能力评估方法:信息资产分析方法、本地灾难恢复和远程灾难恢复等级的划分方法,并在此基础上,利用AHP层次分析法,构建了一套灾难恢复能力评估指标体系。该方法可以使评估结果具有更好的针对性和全面性。     

基于SpatialWare的地理数据访问安全性研究

地理信息系统的应用越来越广泛,特别是基于网络的GIS的发展使地理空间信息通过网络被多用户所共享,因此必须考虑地理数据访问的安全性。文章以MapInfoSpatailWare空间数据引擎为研究对象,给出了基于此模式的数据访问安全性解决方案。     

"十一五"规划国家级重点通信项目

《信息产业科技发展“十一五”规划》提出设立部分重大项目,力争实现重点突破,形成一批具有自主知识产权的核心技术和创新产品,打造较为完整的产业链,形成世界一流的产业群。这其中,与通信相关的重点项目主要有:宽带无线移动通信、下一代网络、家庭网络、智能终端、数字电视等。本部分将对我国在以上领域的现状、项目的具体内容和目标、实现这些目标的具体计划以及相关厂商在各领域的努力和成绩进行介绍。     

干涉型激光直写技术用于光盘防伪

利用作者研制的干涉型激光直写系统，阐述了干涉型激光直写设计OVD的方法，防伪特征，介绍了应用于光盘防伪的OVD技术和应用前景，给出了实验结果。     

Fabrication of Schottky barrier MOSFETs using self-assembly CoSi2 nanopatterning and spacer gate technologies

A self-assembly patterning method for generation of epitaxial CoSi₂ nanostructures was used to fabricate 50 nm channel-length MOSFETs. The transistors have either a symmetric structure with Schottky source and drain or an asymmetric structure with n⁺-source and Schottky drain. The patterning technique is based on anisotropic diffusion of Co/Si atoms in a strain field during rapid thermal oxidation. The strain field is generated along the edges of a mask consisting of 20 nm SiO₂ and 300 nm Si₃N₄. During rapid thermal oxinitridation (RTON) of the masked silicide structure, a well-defined separation of the silicide layer forms along the edge of the mask. These highly uniform gaps define the channel region of the fabricated device. The separated silicide layers act as metal source and drain. A poly-Si spacer was used as the gate contact. The asymmetric transistor was fabricated by ion implantation into the unprotected CoSi₂ layer and a subsequent out-diffusion process to form the n⁺-source. I–V characteristics of both the symmetric and asymmetric transistor structures have been investigated.     

Thermo-Sensitive Ba0.64Sr0.36TiO3 Thin Film Capacitors for Dielectric Type Uncooled Infrared Sensors

Ba_0.64Sr_0.36TiO₃ (BST) thin films are prepared on Pt/Ti/SiO₂/Si₃N₄/SiO₂/Si substrates by a sol-gel method. Thermo-sensitive BST thin film capacitors with a Metal-Ferroelectrics-Metal (M-F(BST)-M) structure are fabricated as the active elements of dielectric type uncooled infrared sensors. XRD are employed to analyze the crystallographic structures of the films. AFM observations reveal a smooth and dense surface of the films with an average grain size of about 35 nm. Rapid temperature annealing (RTA) process is a very efficient way to improve crystallization quality. The preferable annealing temperature is 800°C for 1 min. The butterfly shaped C-V curves of the capacitors indicate the films have a ferroelectric nature. The dielectric constant and dielectric loss of the films at 100 kHz are 450 and 0.038, respectively. At 25°C, where the thermo-sensitive capacitors work, the temperature coefficient of dielectric constant (TCD) is about 5.9 %/°C. These results indicate that the capacitors with sol-gel derived BST thin films are promising to develop dielectric type uncooled infrared sensors.